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Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures/ by Kamakhya Prasad Ghatak, Madhuchhanda Mitra, Arindam Biswas.
作者:
Ghatak, Kamakhya Prasad.
其他作者:
Mitra, Madhuchhanda.
面頁冊數:
XXVI, 234 p. 133 illus., 63 illus. in color.online resource. :
Contained By:
Springer Nature eBook
標題:
Condensed matter. -
電子資源:
https://doi.org/10.1007/978-981-16-9844-6
ISBN:
9789811698446
Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures
Ghatak, Kamakhya Prasad.
Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures
[electronic resource] /by Kamakhya Prasad Ghatak, Madhuchhanda Mitra, Arindam Biswas. - 1st ed. 2022. - XXVI, 234 p. 133 illus., 63 illus. in color.online resource.
1. Introduction -- 2. The HUP and the ES in HD Kane Type III-V and Opto-Electronic Materials Under Intense Electric Field -- 3. The HUP and the ES in Quantum Wells (QWs) of HD Non-Parabolic Materials -- 4. The HUP and the ES in Nano Wires of HD Non-Parabolic Materials -- 5. The HUP and the ES in Quantum Dots (QDs) of HD Non-Parabolic Materials -- 6. The HUP and the ES in doping super lattices of HD Non-Parabolic Semiconductors -- 7. The HUP and the ES in Accumulation Layers of Non-Parabolic Semiconductors -- 8. The HUP and the ES in Heavily Doped (HD) Non-Parabolic Semiconductors under Magnetic quantization.
This book highlights the importance of Electron Statistics (ES), which occupies a singular position in the arena of solid state sciences, in heavily doped (HD) nanostructures by applying Heisenberg’s Uncertainty Principle directly without using the complicated Density-of-States function approach as given in the literature. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb2, stressed materials, GaSb, Te, II-V, Bi2Te3, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, IV-VI, II-VI and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices change the band structure of materials in fundamental ways, which have also been incorporated in the study of ES in HD quantized structures of optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The influence of magnetic quantization, magneto size quantization, quantum wells, wires and dots, crossed electric and quantizing fields, intense electric field, and light waves on the ES in HD quantized structures and superlattices are discussed. The content of this book finds six different applications in the arena of nano-science and nanotechnology and the various ES dependent electronic quantities, namely the effective mass, the screening length, the Einstein relation and the elastic constants have been investigated. This book is useful for researchers, engineers and professionals in the fields of Applied Sciences, solid state and materials science, nano-science and technology, condensed matter physics, and allied fields, including courses in semiconductor nanostructures.
ISBN: 9789811698446
Standard No.: 10.1007/978-981-16-9844-6doiSubjects--Topical Terms:
579760
Condensed matter.
LC Class. No.: QC173.45-173.458
Dewey Class. No.: 530.41
Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures
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1. Introduction -- 2. The HUP and the ES in HD Kane Type III-V and Opto-Electronic Materials Under Intense Electric Field -- 3. The HUP and the ES in Quantum Wells (QWs) of HD Non-Parabolic Materials -- 4. The HUP and the ES in Nano Wires of HD Non-Parabolic Materials -- 5. The HUP and the ES in Quantum Dots (QDs) of HD Non-Parabolic Materials -- 6. The HUP and the ES in doping super lattices of HD Non-Parabolic Semiconductors -- 7. The HUP and the ES in Accumulation Layers of Non-Parabolic Semiconductors -- 8. The HUP and the ES in Heavily Doped (HD) Non-Parabolic Semiconductors under Magnetic quantization.
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