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RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors

Record Type:	Language materials, printed : Monograph/item
Title/Author:	RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors/ by Keith A. Jenkins.
Author:	Jenkins, Keith A.
Description:	XI, 168 p. 128 illus., 87 illus. in color.online resource. :
Contained By:	Springer Nature eBook
Subject:	Microwaves, RF Engineering and Optical Communications. -
Online resource:	https://doi.org/10.1007/978-3-030-77775-3
ISBN:	9783030777753

RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors
Jenkins, Keith A.

RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors[electronic resource] /by Keith A. Jenkins. - 1st ed. 2022. - XI, 168 p. 128 illus., 87 illus. in color.online resource.

Introduction -- Signal propagation & connection to devices -- Frequency characterization of devices -- Spectral analysis techniques -- Device propagation delay -- Jitter measurement -- Transient and time-dependent phenomena.

This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics. .

ISBN: 9783030777753

Standard No.: 10.1007/978-3-030-77775-3doiSubjects--Topical Terms:

1365893
Microwaves, RF Engineering and Optical Communications.

LC Class. No.: TK7867-7867.5

Dewey Class. No.: 621.3815

RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors
LDR:02663nam a22003975i 4500 001 1091816
003 DE-He213
005 20220110071508.0
007 cr nn 008mamaa
008 221228s2022 sz | s |||| 0|eng d
020 $a 9783030777753 $9 978-3-030-77775-3
024 7 $a 10.1007/978-3-030-77775-3 $2 doi
035 $a 978-3-030-77775-3
050 4 $a TK7867-7867.5
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
082 0 4 $a 621.3815 $2 23
100 1 $a Jenkins, Keith A. $e author. $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 1399468
245 1 0 $a RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors $h [electronic resource] / $c by Keith A. Jenkins.
250 $a 1st ed. 2022.
264 1 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2022.
300 $a XI, 168 p. 128 illus., 87 illus. in color. $b online resource.
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
347 $a text file $b PDF $2 rda
505 0 $a Introduction -- Signal propagation & connection to devices -- Frequency characterization of devices -- Spectral analysis techniques -- Device propagation delay -- Jitter measurement -- Transient and time-dependent phenomena.
520 $a This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics. .
650 2 4 $a Microwaves, RF Engineering and Optical Communications. $3 1365893
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 670219
650 1 4 $a Electronic Circuits and Systems. $3 1366689
650 0 $a Telecommunication. $3 568341
650 0 $a Electronics. $3 596389
650 0 $a Electronic circuits. $3 563332
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer Nature eBook
776 0 8 $i Printed edition: $z 9783030777746
776 0 8 $i Printed edition: $z 9783030777760
776 0 8 $i Printed edition: $z 9783030777777
856 4 0 $u https://doi.org/10.1007/978-3-030-77775-3
912 $a ZDB-2-ENG
912 $a ZDB-2-SXE
950 $a Engineering (SpringerNature-11647)
950 $a Engineering (R0) (SpringerNature-43712)