國立虎尾科技大學 |

Defects in Self-Catalysed III-V Nanowires

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Defects in Self-Catalysed III-V Nanowires/ by James A. Gott.
作者:	Gott, James A.
面頁冊數:	XIV, 143 p. 84 illus., 78 illus. in color.online resource. :
Contained By:	Springer Nature eBook
標題:	Microscopy. -
電子資源:	https://doi.org/10.1007/978-3-030-94062-1
ISBN:	9783030940621

Defects in Self-Catalysed III-V Nanowires
Gott, James A.

Defects in Self-Catalysed III-V Nanowires[electronic resource] /by James A. Gott. - 1st ed. 2022. - XIV, 143 p. 84 illus., 78 illus. in color.online resource. - Springer Theses, Recognizing Outstanding Ph.D. Research,2190-5061. - Springer Theses, Recognizing Outstanding Ph.D. Research,.

Introduction -- Methods -- Defects in Nanowires -- Defect Dynamics in Nanowires -- Interfaces in Nanowire Axial Heterostructures -- Conclusions and Future Work.

This thesis presents an in-depth exploration of imperfections that can be found in self-catalysed III-V semiconductor nanowires. By utilising advanced electron microscopy techniques, the interface sharpness and defects at the atomic and macroscopic scale are analysed. It is found that a surprising variety and quantity of defect structures can exist in nanowire systems, and that they can in fact host some never-before-seen defect configurations. To probe how these defects are formed, conditions during nanowire growth can be emulated inside the microscope using the latest generation of in-situ heating holder. This allowed the examination of defect formation, dynamics, and removal, revealing that many of the defects can in fact be eliminated. This information is critical for attaining perfect nanowire growth. The author presents annealing strategies to improve crystal quality, and therefore device performance.

ISBN: 9783030940621

Standard No.: 10.1007/978-3-030-94062-1doiSubjects--Topical Terms:

582141
Microscopy.

LC Class. No.: QC610.9-611.8

Dewey Class. No.: 537.622

Defects in Self-Catalysed III-V Nanowires
LDR:02529nam a22004095i 4500 001 1093580
003 DE-He213
005 20220128152308.0
007 cr nn 008mamaa
008 221228s2022 sz | s |||| 0|eng d
020 $a 9783030940621 $9 978-3-030-94062-1
024 7 $a 10.1007/978-3-030-94062-1 $2 doi
035 $a 978-3-030-94062-1
050 4 $a QC610.9-611.8
072 7 $a TJFD5 $2 bicssc
072 7 $a TEC008090 $2 bisacsh
072 7 $a TJFD $2 thema
082 0 4 $a 537.622 $2 23
100 1 $a Gott, James A. $e author. $0 (orcid)0000-0001-8521-5104 $1 https://orcid.org/0000-0001-8521-5104 $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 1401541
245 1 0 $a Defects in Self-Catalysed III-V Nanowires $h [electronic resource] / $c by James A. Gott.
250 $a 1st ed. 2022.
264 1 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2022.
300 $a XIV, 143 p. 84 illus., 78 illus. in color. $b online resource.
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
347 $a text file $b PDF $2 rda
490 1 $a Springer Theses, Recognizing Outstanding Ph.D. Research, $x 2190-5061
505 0 $a Introduction -- Methods -- Defects in Nanowires -- Defect Dynamics in Nanowires -- Interfaces in Nanowire Axial Heterostructures -- Conclusions and Future Work.
520 $a This thesis presents an in-depth exploration of imperfections that can be found in self-catalysed III-V semiconductor nanowires. By utilising advanced electron microscopy techniques, the interface sharpness and defects at the atomic and macroscopic scale are analysed. It is found that a surprising variety and quantity of defect structures can exist in nanowire systems, and that they can in fact host some never-before-seen defect configurations. To probe how these defects are formed, conditions during nanowire growth can be emulated inside the microscope using the latest generation of in-situ heating holder. This allowed the examination of defect formation, dynamics, and removal, revealing that many of the defects can in fact be eliminated. This information is critical for attaining perfect nanowire growth. The author presents annealing strategies to improve crystal quality, and therefore device performance.
650 2 4 $a Microscopy. $3 582141
650 0 $a Materials—Microscopy. $3 1389135
650 0 $a Nanowires. $3 568223
650 0 $a Semiconductors. $3 578843
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer Nature eBook
776 0 8 $i Printed edition: $z 9783030940614
776 0 8 $i Printed edition: $z 9783030940638
776 0 8 $i Printed edition: $z 9783030940645
830 0 $a Springer Theses, Recognizing Outstanding Ph.D. Research, $x 2190-5053 $3 1253569
856 4 0 $u https://doi.org/10.1007/978-3-030-94062-1
912 $a ZDB-2-CMS
912 $a ZDB-2-SXC
950 $a Chemistry and Materials Science (SpringerNature-11644)
950 $a Chemistry and Material Science (R0) (SpringerNature-43709)