氫摻雜氧化銦錫堆疊層對具氧化鉬電洞選擇性接觸層或背鋁表面電場之單晶矽太陽...
王品勛

 

  • 氫摻雜氧化銦錫堆疊層對具氧化鉬電洞選擇性接觸層或背鋁表面電場之單晶矽太陽能電池光電特性研究 = = Effects of Hydrogen-Doped Indium Tin Oxide Stacked Films on Photovoltaic Characteristics of Monocrystalline Silicon Solar Cells with Molybdenum Oxides as Hole-Selective Contact Layers or Al Back-Surface-Field /
  • Record Type: Language materials, printed : Monograph/item
    Title/Author: 氫摻雜氧化銦錫堆疊層對具氧化鉬電洞選擇性接觸層或背鋁表面電場之單晶矽太陽能電池光電特性研究 =/ 王品勛.
    Reminder of title: Effects of Hydrogen-Doped Indium Tin Oxide Stacked Films on Photovoltaic Characteristics of Monocrystalline Silicon Solar Cells with Molybdenum Oxides as Hole-Selective Contact Layers or Al Back-Surface-Field /
    remainder title: Effects of Hydrogen-Doped Indium Tin Oxide Stacked Films on Photovoltaic Characteristics of Monocrystalline Silicon Solar Cells with Molybdenum Oxides as Hole-Selective Contact Layers or Al Back-Surface-Field.
    Author: 王品勛
    Published: 雲林縣 :國立虎尾科技大學 , : 民111.11.,
    Description: [11], 63面 :圖, 表 ; : 30公分.;
    Notes: 指導教授: 鄭錦隆.
    Subject: Hole-selective contact layers (HSCLs). -
    Online resource: 電子資源
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  • 1 records • Pages 1 •
 
T012311 圖書館B1F 博碩士論文專區 不流通(NON_CIR) 碩士論文(TM) TM 008.166M 1066 111 一般使用(Normal) On shelf 0
  • 1 records • Pages 1 •
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