國立虎尾科技大學 |

Integrated electronics on aluminum nitride = materials and devices /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Integrated electronics on aluminum nitride/ by Reet Chaudhuri.
其他題名:	materials and devices /
作者:	Chaudhuri, Reet.
出版者:	Cham :Springer International Publishing : : 2022.,
面頁冊數:	xvi, 255 p. :ill. (chiefly color), digital ; : 24 cm.;
附註:	"Doctoral thesis accepted by Cornell University, USA."
Contained By:	Springer Nature eBook
標題:	Aluminum nitride. -
電子資源:	https://doi.org/10.1007/978-3-031-17199-4
ISBN:	9783031171994

Integrated electronics on aluminum nitride = materials and devices /
Chaudhuri, Reet.

Integrated electronics on aluminum nitridematerials and devices /[electronic resource] :by Reet Chaudhuri. - Cham :Springer International Publishing :2022. - xvi, 255 p. :ill. (chiefly color), digital ;24 cm. - Springer theses,2190-5061. - Springer theses..

"Doctoral thesis accepted by Cornell University, USA."

Chapter 1. Introduction -- Chapter 2. Polarization-induced 2D Hole Gases in undoped (In)GaN/AlN Heterostructures -- Chapter 3. GHz-speed GaN/AlN p-channel Heterojunction Field Effect Transistors -- Chapter 4. Polarization-induced 2D Electron and Holes in undoped AlN/GaN/AlN Heterostructures -- Chapter 5. AlN/GaN/AlN High Electron Mobility Transistors -- Chapter 6. Integrated RF Electronics on the AlN Platform.

This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.

ISBN: 9783031171994

Standard No.: 10.1007/978-3-031-17199-4doiSubjects--Topical Terms:

1408331
Aluminum nitride.

LC Class. No.: TK7871.85

Dewey Class. No.: 621.38152

Integrated electronics on aluminum nitride = materials and devices /
LDR:02513nam a2200349 a 4500 001 1098011
003 DE-He213
005 20221206150541.0
006 m d
007 cr nn 008maaau
008 230419s2022 sz s 0 eng d
020 $a 9783031171994 $q (electronic bk.)
020 $a 9783031171987 $q (paper)
024 7 $a 10.1007/978-3-031-17199-4 $2 doi
035 $a 978-3-031-17199-4
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.85
072 7 $a TJFD5 $2 bicssc
072 7 $a TEC008090 $2 bisacsh
072 7 $a TJFD $2 thema
082 0 4 $a 621.38152 $2 23
090 $a TK7871.85 $b .C496 2022
100 1 $a Chaudhuri, Reet. $e author. $3 1392957
245 1 0 $a Integrated electronics on aluminum nitride $h [electronic resource] : $b materials and devices / $c by Reet Chaudhuri.
260 $a Cham : $c 2022. $b Springer International Publishing : $b Imprint: Springer,
300 $a xvi, 255 p. : $b ill. (chiefly color), digital ; $c 24 cm.
490 1 $a Springer theses, $x 2190-5061
500 $a "Doctoral thesis accepted by Cornell University, USA."
505 0 $a Chapter 1. Introduction -- Chapter 2. Polarization-induced 2D Hole Gases in undoped (In)GaN/AlN Heterostructures -- Chapter 3. GHz-speed GaN/AlN p-channel Heterojunction Field Effect Transistors -- Chapter 4. Polarization-induced 2D Electron and Holes in undoped AlN/GaN/AlN Heterostructures -- Chapter 5. AlN/GaN/AlN High Electron Mobility Transistors -- Chapter 6. Integrated RF Electronics on the AlN Platform.
520 $a This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.
650 0 $a Aluminum nitride. $3 1408331
650 0 $a Semiconductors. $3 578843
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer Nature eBook
830 0 $a Springer theses. $3 831604
856 4 0 $u https://doi.org/10.1007/978-3-031-17199-4
950 $a Physics and Astronomy (SpringerNature-11651)