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Multilayer magnetic nanostructures = properties and applications /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Multilayer magnetic nanostructures/ by Alexander S. Sigov.
其他題名:	properties and applications /
作者:	Sigov, Alexander S.
出版者:	Singapore :Springer Nature Singapore : : 2023.,
面頁冊數:	xi, 137 p. :ill. (some col.), digital ; : 24 cm.;
Contained By:	Springer Nature eBook
標題:	Electronic Devices. -
電子資源:	https://doi.org/10.1007/978-981-19-6246-2
ISBN:	9789811962462

Multilayer magnetic nanostructures = properties and applications /
Sigov, Alexander S.

Multilayer magnetic nanostructuresproperties and applications /[electronic resource] :by Alexander S. Sigov. - Singapore :Springer Nature Singapore :2023. - xi, 137 p. :ill. (some col.), digital ;24 cm. - Springer aerospace technology,1869-1749. - Springer aerospace technology..

Introduction -- Chapter 1. Physical basis of the appearance of magnetic nanostructures -- Chapter 2. Frustrations of exchange interaction -- Chapter 3. Domain walls and phase diagram of a spin-valve system with a non-magnetic layer -- Chapter 4. A thin film of a ferromagnet on an antiferromagnetic substrate. Uncompensated section -- Chapter 5. Compensated cross-section -- Chapter 6. Behavior in a magnetic field -- Chapter 7. Spin-valve structure ferromagnet-antiferromagnet-ferromagnet -- Chapter 8. Surface spin-flop transition in antiferromagnet -- Conclusion.

This book presents relevant issues for the development of computer technology in general and civil aviation in particular, related to the promising task of developing magnetoresistive memory. In modern conditions of constantly increasing air traffic intensity, it is necessary to use both on board the aircraft and in ground services computing devices that guarantee the required level of flight safety. The book shows that in the multilayer ferromagnet-antiferromagnet system, the behavior of magnetic parameters in layers of nanometer thickness is largely determined by frustrations. The monograph provides not only a complete analysis of the current state of magnetic nanostructures but also predicts new types generated by exchange interaction frustrations. The phase diagrams "layer thickness (layers)-roughness" of a thin ferromagnetic film on an antiferromagnetic substrate and a spin-valve system ferromagnet-antiferromagnet-ferromagnet are constructed taking into account the energy of single-ion anisotropy. The book presents experimental results that confirm the existence of a new type of domain walls. It is shown that the detected domain walls appear exactly at the locations of the atomic steps, and their thickness increases in proportion to the film thickness with a proportionality coefficient of the order of one. Special attention using mathematical models is placed for optimal orientation of spins at a smooth interface in the case of a compensated cross section of an antiferromagnet and an uncompensated cross section. The constructed phase diagrams and models are compared with the experiments. It is thus concluded that scanning tunneling microscopy (STM) makes it possible to study domain walls generated by frustration on the surface of the structure.

ISBN: 9789811962462

Standard No.: 10.1007/978-981-19-6246-2doiSubjects--Topical Terms:

1366460
Electronic Devices.

LC Class. No.: TA418.9.N35

Dewey Class. No.: 620.11597

Multilayer magnetic nanostructures = properties and applications /
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505 0 $a Introduction -- Chapter 1. Physical basis of the appearance of magnetic nanostructures -- Chapter 2. Frustrations of exchange interaction -- Chapter 3. Domain walls and phase diagram of a spin-valve system with a non-magnetic layer -- Chapter 4. A thin film of a ferromagnet on an antiferromagnetic substrate. Uncompensated section -- Chapter 5. Compensated cross-section -- Chapter 6. Behavior in a magnetic field -- Chapter 7. Spin-valve structure ferromagnet-antiferromagnet-ferromagnet -- Chapter 8. Surface spin-flop transition in antiferromagnet -- Conclusion.
520 $a This book presents relevant issues for the development of computer technology in general and civil aviation in particular, related to the promising task of developing magnetoresistive memory. In modern conditions of constantly increasing air traffic intensity, it is necessary to use both on board the aircraft and in ground services computing devices that guarantee the required level of flight safety. The book shows that in the multilayer ferromagnet-antiferromagnet system, the behavior of magnetic parameters in layers of nanometer thickness is largely determined by frustrations. The monograph provides not only a complete analysis of the current state of magnetic nanostructures but also predicts new types generated by exchange interaction frustrations. The phase diagrams "layer thickness (layers)-roughness" of a thin ferromagnetic film on an antiferromagnetic substrate and a spin-valve system ferromagnet-antiferromagnet-ferromagnet are constructed taking into account the energy of single-ion anisotropy. The book presents experimental results that confirm the existence of a new type of domain walls. It is shown that the detected domain walls appear exactly at the locations of the atomic steps, and their thickness increases in proportion to the film thickness with a proportionality coefficient of the order of one. Special attention using mathematical models is placed for optimal orientation of spins at a smooth interface in the case of a compensated cross section of an antiferromagnet and an uncompensated cross section. The constructed phase diagrams and models are compared with the experiments. It is thus concluded that scanning tunneling microscopy (STM) makes it possible to study domain walls generated by frustration on the surface of the structure.
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