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Physics of semiconductor devices /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Physics of semiconductor devices // S.M. Sze, Yiming Li, Kwok K. Ng, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu, Taiwan.
作者:	Sze, S. M.,
其他作者:	Ng, Kwok Kwok,
出版者:	Hoboken, NJ :John Wiley & Sons, Inc., : c2021.,
面頁冊數:	xii, 931 p. :ill. ; : 24 cm.;
附註:	Previous edition: 2012.
標題:	Semiconductors -
ISBN:	9781119429111 (hbk.) :

Physics of semiconductor devices /
Sze, S. M.,1936-

Physics of semiconductor devices /S.M. Sze, Yiming Li, Kwok K. Ng, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu, Taiwan. - 4th ed. - Hoboken, NJ :John Wiley & Sons, Inc.,c2021. - xii, 931 p. :ill. ;24 cm.

Previous edition: 2012.

Includes bibliographical references and index.

Part I : Semiconductor physics. Physisand properties of semiconductors -- a review -- Part II : Device building blocks. p-n junctions -- Metal-semiconductor contacts -- Metal-insulator-semiconductor capacitors -- Part III : Transistors. Bipolar transistors -- MOSFETs -- Nonvolatile memory devices -- JFETs, MESFETs, and MODFETs -- Part IV : Negative-resistance and power devices. Tunnel devices -- IMPATT diodes, TED, and RST devices -- Thyristors and power devices -- Part V : Photonic devices and sensors. LEDs and lasers -- Photodetectors and solar cells -- Sensors -- Appendices. A. List of symbols -- B. International system of units -- C. Unit prefixes -- D. Greek alphabet -- E. Physical constants -- F. Properties of important semiconductors -- G. The Boch Theorem and the periodic energy in the reciprocal lattice -- H. Properties of Si and GaAs -- I : The derivations of Boltzmann Transport Equation and hydrodynamic model -- J. Properties of SiO₂ and Si₃N₄ -- K. Compact models of bipolar transistors -- L. Discovery of the floating-gate memory effect.

"Since the discovery of the transistor effect in 1947 by a research team at Bell Telephone Laboratories (now Nokia Bell Labs.), the semiconductor-device field has grown rapidly. Coincident with this growth, the semiconductor-device literature has expanded and diversified. For access to this massive amount of information, there is a need for a book giving a comprehensive introductory account of device physics and operational principles, with references. With the intention of meeting such a need, the First, Second and Third Editions of Physics of Semiconductor Devices were published in 1969, 1981 and 2007, respectively. It is perhaps somewhat surprising that the book has so long held its place as one of the main textbooks for advanced undergraduate and graduate students in applied physics, electrical and electronics engineering, and materials science. Because the book includes much useful information on material parameters and device physics, it is also a major reference for engineers and scientists in semiconductor-device research and development. To date, the book is one of the most, if not the most, cited works in contemporary engineering and applied science publications with over 55,000 citations (Google Scholar)"--

ISBN: 9781119429111 (hbk.) :NT4492

LCCN: 2020028806Subjects--Topical Terms:

714128
Semiconductors

LC Class. No.: TK7871.85 / .S988 2021

Dewey Class. No.: 537.6/22

Physics of semiconductor devices /
LDR:03281cam a2200277 a 4500 001 1108544
003 OCoLC
005 20231013043925.0
008 231031s2021 njua b 001 0 eng d
010 $a 2020028806
020 $a 9781119429111 (hbk.) : $c NT4492
020 $a 1119429110 (hbk.)
020 $z 9781119429135 (Adobe pdf)
020 $z 9781119618003 (epub)
035 $a (OCoLC)1161998512
040 $a DLC $b eng $e aacr2 $c DLC $d OCLCO $d OCLCF $d YDX $d IL4J6 $d OCLCO $d NDD $d AJB $d MEAUC
042 $a pcc
050 0 0 $a TK7871.85 $b .S988 2021
082 0 0 $a 537.6/22 $2 23
100 1 $a Sze, S. M., $d 1936- $3 977854
245 1 0 $a Physics of semiconductor devices / $c S.M. Sze, Yiming Li, Kwok K. Ng, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu, Taiwan.
250 $a 4th ed.
260 # $a Hoboken, NJ : $b John Wiley & Sons, Inc., $c c2021.
300 $a xii, 931 p. : $b ill. ; $c 24 cm.
500 $a Previous edition: 2012.
504 $a Includes bibliographical references and index.
505 0 # $a Part I : Semiconductor physics. Physisand properties of semiconductors -- a review -- Part II : Device building blocks. p-n junctions -- Metal-semiconductor contacts -- Metal-insulator-semiconductor capacitors -- Part III : Transistors. Bipolar transistors -- MOSFETs -- Nonvolatile memory devices -- JFETs, MESFETs, and MODFETs -- Part IV : Negative-resistance and power devices. Tunnel devices -- IMPATT diodes, TED, and RST devices -- Thyristors and power devices -- Part V : Photonic devices and sensors. LEDs and lasers -- Photodetectors and solar cells -- Sensors -- Appendices. A. List of symbols -- B. International system of units -- C. Unit prefixes -- D. Greek alphabet -- E. Physical constants -- F. Properties of important semiconductors -- G. The Boch Theorem and the periodic energy in the reciprocal lattice -- H. Properties of Si and GaAs -- I : The derivations of Boltzmann Transport Equation and hydrodynamic model -- J. Properties of SiO₂ and Si₃N₄ -- K. Compact models of bipolar transistors -- L. Discovery of the floating-gate memory effect.
520 # $a "Since the discovery of the transistor effect in 1947 by a research team at Bell Telephone Laboratories (now Nokia Bell Labs.), the semiconductor-device field has grown rapidly. Coincident with this growth, the semiconductor-device literature has expanded and diversified. For access to this massive amount of information, there is a need for a book giving a comprehensive introductory account of device physics and operational principles, with references. With the intention of meeting such a need, the First, Second and Third Editions of Physics of Semiconductor Devices were published in 1969, 1981 and 2007, respectively. It is perhaps somewhat surprising that the book has so long held its place as one of the main textbooks for advanced undergraduate and graduate students in applied physics, electrical and electronics engineering, and materials science. Because the book includes much useful information on material parameters and device physics, it is also a major reference for engineers and scientists in semiconductor-device research and development. To date, the book is one of the most, if not the most, cited works in contemporary engineering and applied science publications with over 55,000 citations (Google Scholar)"-- $c Provided by publisher.
650 # 2 $a Semiconductors $3 714128
650 # 0 $a Semiconductors. $3 578843
700 1 # $a Ng, Kwok Kwok, $d 1952- $3 772563
700 1 # $a Li, Yiming $c (Professor of electrical engineering) $3 1419429