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Stress and strain engineering at nanoscale in semiconductor devices /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Stress and strain engineering at nanoscale in semiconductor devices // Chinmay K. Maiti.
作者:	Maiti, C. K.
出版者:	Boca Raton ;CRC Press, : c2021.,
面頁冊數:	xiii, 260 p. :ill., port. ; : 24 cm.;
標題:	Nanoelectronics. -
ISBN:	9780367519292

Stress and strain engineering at nanoscale in semiconductor devices /
Maiti, C. K.

Stress and strain engineering at nanoscale in semiconductor devices /Chinmay K. Maiti. - 1st ed. - Boca Raton ;CRC Press,c2021. - xiii, 260 p. :ill., port. ;24 cm.

Includes bibliographical references and index.

"Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices."--Back cover

ISBN: 9780367519292

Nat. Bib. No.: GBC172311bnbSubjects--Topical Terms:

574250
Nanoelectronics.

LC Class. No.: TA405 / .M35 2021

Dewey Class. No.: 620.1/123

Stress and strain engineering at nanoscale in semiconductor devices /
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300 $a xiii, 260 p. : $b ill., port. ; $c 24 cm.
504 $a Includes bibliographical references and index.
520 # $a "Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices."--Back cover
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650 # 0 $a Semiconductors. $3 578843
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