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Development of Back Contacts for CdTe Thin Films Solar Cells.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Development of Back Contacts for CdTe Thin Films Solar Cells./
Author:	Alfadhili, Fadhil Khalaf Dahash.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
Description:	116 p.
Notes:	Source: Dissertations Abstracts International, Volume: 82-12, Section: B.
Contained By:	Dissertations Abstracts International82-12B.
Subject:	Physics. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28642546
ISBN:	9798516076732

Development of Back Contacts for CdTe Thin Films Solar Cells.
Alfadhili, Fadhil Khalaf Dahash.

Development of Back Contacts for CdTe Thin Films Solar Cells. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 116 p.

Source: Dissertations Abstracts International, Volume: 82-12, Section: B.

Thesis (Ph.D.)--The University of Toledo, 2020.

This item must not be sold to any third party vendors.

Thin film solar cells based on polycrystalline p-type cadmium telluride (CdTe) represent one of these the most promising photovoltaic (PV) device due to high efficiency and low-cost production. Currently, CdTe solar cells provide the lowest cost electricity generation in utility-scale applications, which is a cost-competitive with the traditional power source, fossil fuel. CdTe thin film PV has attained 22.1 % of power conversion efficiency for small area scale and 18.6 % for modules scale. However, the high efficiency of CdTe devices has been achieved by increasing the photo-generated current by changing the traditional window layer (CdS) of CdTe to a wider bandgap material with better band alignment. The open-circuit voltage (VOC) remains below the theoretical limit due to a barrier at the back of the device due to the deep valence band edge of CdTe (-5.9 eV). Voc can be increased by adding a buffer layer between CdTe and the back electrode to decrease band banding and reducing carrier recombination at the back interface. In this thesis, several materials were investigated as a back-buffer layer, such as single-wall carbon nanotube (SWCNT), zinc telluride (ZnTe), tellurium (Te), and cadmium zinc telluride (CZT) to minimize the bend bending at CdTe/back-buffer layer interface. An alternative method to reduce the carrier recombination at the rear surface, the use of aluminum oxide (Al2O3) layer as a passivation layer was also demonstrated. Finally, an effective method of CdCl2 treatment for CZT thin film was investigated. This method shows that zinc (Zn) can be maintained during the heat treatment.

ISBN: 9798516076732Subjects--Topical Terms:

564049
Physics.
Subjects--Index Terms:

Thin film solar cells

Development of Back Contacts for CdTe Thin Films Solar Cells.
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300 $a 116 p.
500 $a Source: Dissertations Abstracts International, Volume: 82-12, Section: B.
502 $a Thesis (Ph.D.)--The University of Toledo, 2020.
506 $a This item must not be sold to any third party vendors.
520 $a Thin film solar cells based on polycrystalline p-type cadmium telluride (CdTe) represent one of these the most promising photovoltaic (PV) device due to high efficiency and low-cost production. Currently, CdTe solar cells provide the lowest cost electricity generation in utility-scale applications, which is a cost-competitive with the traditional power source, fossil fuel. CdTe thin film PV has attained 22.1 % of power conversion efficiency for small area scale and 18.6 % for modules scale. However, the high efficiency of CdTe devices has been achieved by increasing the photo-generated current by changing the traditional window layer (CdS) of CdTe to a wider bandgap material with better band alignment. The open-circuit voltage (VOC) remains below the theoretical limit due to a barrier at the back of the device due to the deep valence band edge of CdTe (-5.9 eV). Voc can be increased by adding a buffer layer between CdTe and the back electrode to decrease band banding and reducing carrier recombination at the back interface. In this thesis, several materials were investigated as a back-buffer layer, such as single-wall carbon nanotube (SWCNT), zinc telluride (ZnTe), tellurium (Te), and cadmium zinc telluride (CZT) to minimize the bend bending at CdTe/back-buffer layer interface. An alternative method to reduce the carrier recombination at the rear surface, the use of aluminum oxide (Al2O3) layer as a passivation layer was also demonstrated. Finally, an effective method of CdCl2 treatment for CZT thin film was investigated. This method shows that zinc (Zn) can be maintained during the heat treatment.
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653 $a Cadmium telluride
653 $a Cadmium zinc telluride
653 $a Photvoltaics
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710 2 $a The University of Toledo. $b Physics. $3 1437664
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