國立虎尾科技大學 |

Electromigration in metals : = fundamentals to nano-interconnects /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Electromigration in metals :/ Paul S. Ho, Chao-Kun Hu, Martin Gall, Valeriy Sukharev.
其他題名:	fundamentals to nano-interconnects /
作者:	Ho, P. S.,
其他作者:	Sukharev, Valeriy,
面頁冊數:	1 online resource (xiii, 417 pages) :digital, PDF file(s). :
附註:	Title from publisher's bibliographic system (viewed on 07 Apr 2022).
標題:	Electrodiffusion. -
電子資源:	https://doi.org/10.1017/9781139505819
ISBN:	9781139505819 (ebook)

Electromigration in metals : = fundamentals to nano-interconnects /
Ho, P. S.,

Electromigration in metals :fundamentals to nano-interconnects /Paul S. Ho, Chao-Kun Hu, Martin Gall, Valeriy Sukharev. - 1 online resource (xiii, 417 pages) :digital, PDF file(s).

Title from publisher's bibliographic system (viewed on 07 Apr 2022).

Introduction to electromigration -- Fundamentals of electromigration -- Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects -- Stress evolution and damage formation in confined metal lines under electric stressing -- Electromigration in Cu interconnect structures -- Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure -- Massive scale statistical studies for electromigration -- Assessment of electromigration damage in large on-chip power grids.

Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.

ISBN: 9781139505819 (ebook)Subjects--Topical Terms:

527935
Electrodiffusion.

LC Class. No.: TK7874.53 / .H62 2022

Dewey Class. No.: 621.3815

Electromigration in metals : = fundamentals to nano-interconnects /
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500 $a Title from publisher's bibliographic system (viewed on 07 Apr 2022).
505 0 $a Introduction to electromigration -- Fundamentals of electromigration -- Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects -- Stress evolution and damage formation in confined metal lines under electric stressing -- Electromigration in Cu interconnect structures -- Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure -- Massive scale statistical studies for electromigration -- Assessment of electromigration damage in large on-chip power grids.
520 $a Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.
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