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Modeling and characterization of RF and microwave power FETs /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Modeling and characterization of RF and microwave power FETs // Peter H. Aaen, Jaime A. Plá, John Wood.
remainder title:	Modeling & Characterization of RF & Microwave Power FETs
Author:	Aaen, Peter,
other author:	Plá, Jaime A.,
Description:	1 online resource (xv, 362 pages) :digital, PDF file(s). :
Notes:	Title from publisher's bibliographic system (viewed on 05 Oct 2015).
Subject:	Radio frequency oscillators. -
Online resource:	https://doi.org/10.1017/CBO9780511541124
ISBN:	9780511541124 (ebook)

Modeling and characterization of RF and microwave power FETs /
Aaen, Peter,

Modeling and characterization of RF and microwave power FETs /Modeling & Characterization of RF & Microwave Power FETsPeter H. Aaen, Jaime A. Plá, John Wood. - 1 online resource (xv, 362 pages) :digital, PDF file(s). - The Cambridge RF and microwave engineering series. - Cambridge RF and microwave engineering series..

Title from publisher's bibliographic system (viewed on 05 Oct 2015).

RF and microwave power transistors -- Compact modeling of high-power FETs -- Electrical measurement techniques -- Passive components -- Thermal characterization and modeling -- Modeling the active transistor -- Function approximation for compact modeling -- Model implementation in CAD tools -- Model validation.

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

ISBN: 9780511541124 (ebook)Subjects--Topical Terms:

893321
Radio frequency oscillators.

LC Class. No.: TK7872.O7 / A14 2007

Dewey Class. No.: 621.3815284

Modeling and characterization of RF and microwave power FETs /
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245 1 0 $a Modeling and characterization of RF and microwave power FETs / $c Peter H. Aaen, Jaime A. Plá, John Wood.
246 3 $a Modeling & Characterization of RF & Microwave Power FETs
264 1 $a Cambridge : $b Cambridge University Press, $c 2007.
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490 1 $a The Cambridge RF and microwave engineering series
500 $a Title from publisher's bibliographic system (viewed on 05 Oct 2015).
505 0 $a RF and microwave power transistors -- Compact modeling of high-power FETs -- Electrical measurement techniques -- Passive components -- Thermal characterization and modeling -- Modeling the active transistor -- Function approximation for compact modeling -- Model implementation in CAD tools -- Model validation.
520 $a This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
650 0 $a Radio frequency oscillators. $3 893321
650 0 $a Field-effect transistors $x Mathematical models. $3 1376849
700 1 $a Plá, Jaime A., $e author. $3 1440427
700 1 $a Wood, John, $e author. $3 1440428
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830 0 $a Cambridge RF and microwave engineering series. $3 779230
856 4 0 $u https://doi.org/10.1017/CBO9780511541124