國立虎尾科技大學 |

Modeling and characterization of RF and microwave power FETs /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Modeling and characterization of RF and microwave power FETs // Peter H. Aaen, Jaime A. Plá, John Wood.
其他題名:	Modeling & Characterization of RF & Microwave Power FETs
作者:	Aaen, Peter,
其他作者:	Wood, John,
面頁冊數:	1 online resource (xv, 362 pages) :digital, PDF file(s). :
附註:	Title from publisher's bibliographic system (viewed on 05 Oct 2015).
標題:	Field-effect transistors - Mathematical models. -
電子資源:	https://doi.org/10.1017/CBO9780511541124
ISBN:	9780511541124 (ebook)

Modeling and characterization of RF and microwave power FETs /
Aaen, Peter,

Modeling and characterization of RF and microwave power FETs /Modeling & Characterization of RF & Microwave Power FETsPeter H. Aaen, Jaime A. Plá, John Wood. - 1 online resource (xv, 362 pages) :digital, PDF file(s). - The Cambridge RF and microwave engineering series. - Cambridge RF and microwave engineering series..

Title from publisher's bibliographic system (viewed on 05 Oct 2015).

RF and microwave power transistors -- Compact modeling of high-power FETs -- Electrical measurement techniques -- Passive components -- Thermal characterization and modeling -- Modeling the active transistor -- Function approximation for compact modeling -- Model implementation in CAD tools -- Model validation.

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

ISBN: 9780511541124 (ebook)Subjects--Topical Terms:

1376849
Field-effect transistors
--Mathematical models.

LC Class. No.: TK7872.O7 / A14 2007

Dewey Class. No.: 621.3815284

Modeling and characterization of RF and microwave power FETs /
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