國立虎尾科技大學 |

各種金屬對具氧化鉬及氧化亞銅堆疊層之單晶矽太陽能電池光電特性研究 = = Effects of Various Metals on Photovoltaic Properties of Monocrystalline Silicon Solar Cells with Molybdenum Oxide and Copper Oxide Stacked Layer /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	各種金屬對具氧化鉬及氧化亞銅堆疊層之單晶矽太陽能電池光電特性研究 =/ 吳冠霆.
其他題名:	Effects of Various Metals on Photovoltaic Properties of Monocrystalline Silicon Solar Cells with Molybdenum Oxide and Copper Oxide Stacked Layer /
其他題名:	Effects of Various Metals on Photovoltaic Properties of Monocrystalline Silicon Solar Cells with Molybdenum Oxide and Copper Oxide Stacked Layer.
作者:	吳冠霆
出版者:	雲林縣 :國立虎尾科技大學 , : 民113.06.,
面頁冊數:	[15], 80面 :圖, 表 ; : 30公分.;
附註:	指導教授: 鄭錦隆.
標題:	photovoltaic properties. -
電子資源:	電子資源

各種金屬對具氧化鉬及氧化亞銅堆疊層之單晶矽太陽能電池光電特性研究 = = Effects of Various Metals on Photovoltaic Properties of Monocrystalline Silicon Solar Cells with Molybdenum Oxide and Copper Oxide Stacked Layer /
吳冠霆

各種金屬對具氧化鉬及氧化亞銅堆疊層之單晶矽太陽能電池光電特性研究 =Effects of Various Metals on Photovoltaic Properties of Monocrystalline Silicon Solar Cells with Molybdenum Oxide and Copper Oxide Stacked Layer /Effects of Various Metals on Photovoltaic Properties of Monocrystalline Silicon Solar Cells with Molybdenum Oxide and Copper Oxide Stacked Layer.吳冠霆. - 初版. - 雲林縣 :國立虎尾科技大學 ,民113.06. - [15], 80面 :圖, 表 ;30公分.

指導教授: 鄭錦隆.

碩士論文--國立虎尾科技大學光電工程系光電與材料科技碩士班.

含參考書目.

本論文研究探討各種金屬對具氧化鉬及氧化亞銅堆疊層之單晶矽太陽能電池光電特性研究，由於二氧化鉬(MoO2)具有低溫製程、高功函數、寬能隙的特性、與矽接觸可使能帶彎曲，因此具有較好的電洞選擇特性，同時氧化鉬是利用氧空缺傳輸電洞，因此在沒有金半接面的情況下，亦可傳輸電洞，當氧化鉬作為電洞選擇性材料時，會大量使用貴的金屬銀，故本論文嘗試研究取代銀金屬的各種金屬效應，並結合氧化鉬及氧化亞銅(Cu2O)堆疊層進行實驗。實驗參數包含改變銀電極的厚度、改變銀鍍率、各種鎳厚度搭配鋁堆疊電極、各種銀厚度搭配鋁堆疊電極、探討銀(Ag)、銅(Cu)及鋁(Al)電極對 MoO2/Cu2O 堆疊層效應、改變MoO2/Ag/Cu2O 堆疊結構中的銀厚度對元件轉換效率之影響及調整堆疊於MoO2 上的各種摻雜銀之氧化亞銅對元件轉換效率之影響。材料分析包含使用X 射線衍射(XRD)確認顆粒大小，利用熱場式電子顯微鏡(FESEM)觀測表面型態，以及使用積分球測定反射率。實驗結果顯示，當銀的熱蒸鍍速率為2.0 Å/s 時且厚度為100 nm 時，與5.0 Å/s 時且厚度為500 nm 時的光電轉換效率一樣為20.22 %，在各種鎳厚度搭配鋁的實驗結果可知，當蒸鍍4.5 nm 的鎳搭配200 nm 鋁時，光電轉換效率只有19.61 %，這是由於 Ni/Al 串聯電阻較高，於是嘗試利用銀作為中間層進行實驗，並在銀70 nm 時搭配200 nm 的鋁電極時獲得最佳光電轉換效率20.33 %。後續進行銀、銅及鋁電極對MoO2/Cu2O 堆疊層效應探討，實驗結果顯示，MoO2/Cu2O/Ag 的結構具有最高的轉換效率21.34 %，而為了得到更好的傳輸特性，因此將銀插入二氧化鉬中間並改變厚度，在銀為0.5 nm 時得到最佳的光電轉換效率21.34 %，最後將銀與氧化亞銅進行共蒸鍍，並與氧化鉬堆疊，實驗結果顯示當結構為MoO2/Cu2O:Ag/Cu2O 時，有最佳光電轉換效率21.38 %，開路電壓為652 mV、短路電流密度為40.28 mA/cm2、填充因子為81.29 %及串聯電阻為1.53 Ω-cm2。。.

(平裝)Subjects--Topical Terms:

1449965
photovoltaic properties.

各種金屬對具氧化鉬及氧化亞銅堆疊層之單晶矽太陽能電池光電特性研究 = = Effects of Various Metals on Photovoltaic Properties of Monocrystalline Silicon Solar Cells with Molybdenum Oxide and Copper Oxide Stacked Layer /
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246 1 1 $a Effects of Various Metals on Photovoltaic Properties of Monocrystalline Silicon Solar Cells with Molybdenum Oxide and Copper Oxide Stacked Layer.
250 $a 初版.
260 # $a 雲林縣 : $b 國立虎尾科技大學 , $c 民113.06.
300 $a [15], 80面 : $b 圖, 表 ; $c 30公分.
500 $a 指導教授: 鄭錦隆.
500 $a 學年度: 112.
502 $a 碩士論文--國立虎尾科技大學光電工程系光電與材料科技碩士班.
504 $a 含參考書目.
520 3 $a 本論文研究探討各種金屬對具氧化鉬及氧化亞銅堆疊層之單晶矽太陽能電池光電特性研究，由於二氧化鉬(MoO2)具有低溫製程、高功函數、寬能隙的特性、與矽接觸可使能帶彎曲，因此具有較好的電洞選擇特性，同時氧化鉬是利用氧空缺傳輸電洞，因此在沒有金半接面的情況下，亦可傳輸電洞，當氧化鉬作為電洞選擇性材料時，會大量使用貴的金屬銀，故本論文嘗試研究取代銀金屬的各種金屬效應，並結合氧化鉬及氧化亞銅(Cu2O)堆疊層進行實驗。實驗參數包含改變銀電極的厚度、改變銀鍍率、各種鎳厚度搭配鋁堆疊電極、各種銀厚度搭配鋁堆疊電極、探討銀(Ag)、銅(Cu)及鋁(Al)電極對 MoO2/Cu2O 堆疊層效應、改變MoO2/Ag/Cu2O 堆疊結構中的銀厚度對元件轉換效率之影響及調整堆疊於MoO2 上的各種摻雜銀之氧化亞銅對元件轉換效率之影響。材料分析包含使用X 射線衍射(XRD)確認顆粒大小，利用熱場式電子顯微鏡(FESEM)觀測表面型態，以及使用積分球測定反射率。實驗結果顯示，當銀的熱蒸鍍速率為2.0 Å/s 時且厚度為100 nm 時，與5.0 Å/s 時且厚度為500 nm 時的光電轉換效率一樣為20.22 %，在各種鎳厚度搭配鋁的實驗結果可知，當蒸鍍4.5 nm 的鎳搭配200 nm 鋁時，光電轉換效率只有19.61 %，這是由於 Ni/Al 串聯電阻較高，於是嘗試利用銀作為中間層進行實驗，並在銀70 nm 時搭配200 nm 的鋁電極時獲得最佳光電轉換效率20.33 %。後續進行銀、銅及鋁電極對MoO2/Cu2O 堆疊層效應探討，實驗結果顯示，MoO2/Cu2O/Ag 的結構具有最高的轉換效率21.34 %，而為了得到更好的傳輸特性，因此將銀插入二氧化鉬中間並改變厚度，在銀為0.5 nm 時得到最佳的光電轉換效率21.34 %，最後將銀與氧化亞銅進行共蒸鍍，並與氧化鉬堆疊，實驗結果顯示當結構為MoO2/Cu2O:Ag/Cu2O 時，有最佳光電轉換效率21.38 %，開路電壓為652 mV、短路電流密度為40.28 mA/cm2、填充因子為81.29 %及串聯電阻為1.53 Ω-cm2。。.
520 3 $a The effects of various metals on photovoltaic properties of monocrystalline silicon solar cells with molybdenum oxide and copper oxide stacked layer were investigated. Molybdenum dioxide(MoO2) exhibits favorable hole-selective properties due to its characteristics of lowtemperature processing, high work function, wide bandgap, and the ability to bend the band structure when in contact with silicon. Meanwhile, MoO2 utilizes oxygen vacancies to transport holes, so it can also transport holes without a metal-semiconductor junction. When MoO2 is used as the hole-selective material, it often involves extensive use of the expensive metal silver. Therefore, this paper attempts to study various metal effects as substitutes for silver metal, combined with MoO2 and cuprous oxide(Cu2O) stack layers for experimentation. The experimental parameters include varying the thickness of the silver electrode, altering the silver deposition rate, various nickel thicknesses paired with aluminum stack electrodes, various silver thicknesses paired with aluminum stack electrodes, investigating the effects of silver(Ag), copper(Cu), and aluminum(Al) electrodes on MoO2/Cu2O stack layers, assessing the influence of varying silver thickness in MoO2/Ag/Cu2O stack structures on device conversion efficiency(CE), and examining the impact of various silver-doped cuprous oxide layers stacked on MoO2 on device CE. Material analysis involves confirming particle size using X-ray diffraction(XRD) and observing surface morphology utilizing field emission scanning electron microscopy(FESEM) and using integral sphere to measure reflectance. The experimental results show that when the thermal evaporation rate of silver is 2.0 Å/s and the thickness is 100 nm, the CE is the same at 20.22 % as when it is 5.0 Å/s and the thickness is 500 nm. From the experimental results with various nickel thicknesses combined with aluminum, it is observed that when 4.5 nm of nickel is deposited with 200 nm of aluminum, the CE is only 19.61 %. This is attributed to the higher Ni/Al series resistance. Consequently, an attempt was made to utilize silver as an intermediate layer for experimentation. The optimal CE of 20.33 % was achieved when 70 nm of silver was combined with 200 nm of aluminum electrodes. Subsequent, investigations were conducted on the effects of silver, copper, and aluminum electrodes on MoO2/Cu2O stack layers. The experimental results revealed that the MoO2/Cu2O/Ag structure exhibited the highest CE of 21.34 %. In pursuit of better transmission characteristics, silver was inserted into the MoO2 layer with varying thicknesses. The optimal CE of 21.34 % was achieved when the silver thickness was 0.5 nm. Finally, silver was co-evaporated with Cu2O and stacked with MoO2. The experimental results revealed that when the structure was MoO2/Cu2O:Ag/Cu2O, the optimum CE reached 21.38 %, with an open-circuit voltage of 652 mV, a short-circuit current density of 40.28 mA/cm2, a fill factor of 81.29 %, and a series resistance of 1.53 Ω-cm2..
563 $a (平裝)
650 # 4 $a photovoltaic properties. $3 1449965
650 # 4 $a monocrystalline silicon solar. $3 1449964
650 # 4 $a cuprous oxide. $3 1339417
650 # 4 $a molybdenum oxide. $3 1127012
650 # 4 $a metal. $3 1449963
650 # 4 $a 光電特性. $3 1085033
650 # 4 $a 單晶矽太陽能電池. $3 1015652
650 # 4 $a 氧化亞銅. $3 1245180
650 # 4 $a 氧化鉬. $3 1127014
650 # 7 $a 金屬. $2 lcstt $3 1050090
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