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負型單晶矽與氧化銦錫之介面特性研究 = = Study of Inter...

蕭涓云

負型單晶矽與氧化銦錫之介面特性研究 = = Study of Interface Characteristics of N-Type Monocrystalline Silicon and Indium Tin Oxide /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	負型單晶矽與氧化銦錫之介面特性研究 =/ 蕭涓云.
其他題名:	Study of Interface Characteristics of N-Type Monocrystalline Silicon and Indium Tin Oxide /
其他題名:	Study of Interface Characteristics of N-Type Monocrystalline Silicon and Indium Tin Oxide.
作者:	蕭涓云
出版者:	雲林縣 :國立虎尾科技大學 , : 民113.06.,
面頁冊數:	[10], 61面 :圖, 表 ; : 30公分.;
附註:	指導教授: 鄭錦隆.
標題:	負型單晶矽. -
電子資源:	電子資源

負型單晶矽與氧化銦錫之介面特性研究 = = Study of Interface Characteristics of N-Type Monocrystalline Silicon and Indium Tin Oxide /
蕭涓云

負型單晶矽與氧化銦錫之介面特性研究 =Study of Interface Characteristics of N-Type Monocrystalline Silicon and Indium Tin Oxide /Study of Interface Characteristics of N-Type Monocrystalline Silicon and Indium Tin Oxide.蕭涓云. - 初版. - 雲林縣 :國立虎尾科技大學 ,民113.06. - [10], 61面 :圖, 表 ;30公分.

指導教授: 鄭錦隆.

碩士論文--國立虎尾科技大學光電工程系光電與材料科技碩士班.

含參考書目.

本論文探討負型單晶矽與氧化銦錫之介面特性研究。氧化銦錫具有低電阻率及高穿透率，因此可作為串接太陽能電池之連接層及電極等，當氧化銦錫沉積在負型矽上，由於氧化銦錫及負型矽的功函數不同會產生高蕭基能障，使介面電性有較高的串聯電阻特性。為了解薄膜結構與蕭基能障之間的關聯，實驗參數包含不同的濺鍍功率和靶材氧化效應，薄膜特性利用Transfer Length Method (TLM)技術分析量測濺鍍功率對接觸電阻之影響，透過變溫順偏電流-電壓量測計算得出蕭基能障高度，經由霍爾效應分析儀獲得薄膜電阻率、載子移動率及濃度等薄膜電性，並藉由熱電子型場發射掃描式電子顯微鏡及X光繞射儀分別獲取薄膜厚度、晶粒大小、晶格方向等薄膜特性。實驗結果顯示，氧化銦錫濺鍍在透明玻璃基板上，其濺鍍功率從50 W提升到200 W，可從霍爾效應分析儀之量測結果發現電阻率由9.51*10^-1 Ω-cm下降到1.60*10^-3 Ω-cm，若濺鍍功率超過200 W，靶材表面有放電現象影響實驗結果，為保護靶材不受損，第二階段實驗使用200 W為主要濺鍍功率，在真空中通入高純度氧氣使靶材表面氧化可將電阻率從1.60*10^-3 Ω-cm降至9.56*10^-4 Ω-cm，最後研究氧化銦錫濺鍍功率在100 W、150 W以及200 W下與負型矽介面之接觸電阻及蕭基能障的影響。實驗結果顯示，在功率為200 W及靶材通入純氧氧化下可獲得最佳接觸電阻為2.30*10^-4 Ω-cm^2及蕭基能障高度為0.319 eV及晶粒大小為4.98 nm。.

(平裝)Subjects--Topical Terms:

1449923
負型單晶矽.

負型單晶矽與氧化銦錫之介面特性研究 = = Study of Interface Characteristics of N-Type Monocrystalline Silicon and Indium Tin Oxide /
LDR:05099cam a2200241 i 4500 001 1129692
008 241015s2024 ch ak erm 000 0 chi d
035 $a (THES)112NYPI0124020
040 $a NFU $b chi $c NFU $e CCR
041 0 # $a chi $b chi $b eng
084 $a 008.166M $b 4431:4 113 $2 ncsclt
100 1 $a 蕭涓云 $3 1448755
245 1 0 $a 負型單晶矽與氧化銦錫之介面特性研究 = $b Study of Interface Characteristics of N-Type Monocrystalline Silicon and Indium Tin Oxide / $c 蕭涓云.
246 1 1 $a Study of Interface Characteristics of N-Type Monocrystalline Silicon and Indium Tin Oxide.
250 $a 初版.
260 # $a 雲林縣 : $b 國立虎尾科技大學 , $c 民113.06.
300 $a [10], 61面 : $b 圖, 表 ; $c 30公分.
500 $a 指導教授: 鄭錦隆.
500 $a 學年度: 112.
502 $a 碩士論文--國立虎尾科技大學光電工程系光電與材料科技碩士班.
504 $a 含參考書目.
520 3 $a 本論文探討負型單晶矽與氧化銦錫之介面特性研究。氧化銦錫具有低電阻率及高穿透率，因此可作為串接太陽能電池之連接層及電極等，當氧化銦錫沉積在負型矽上，由於氧化銦錫及負型矽的功函數不同會產生高蕭基能障，使介面電性有較高的串聯電阻特性。為了解薄膜結構與蕭基能障之間的關聯，實驗參數包含不同的濺鍍功率和靶材氧化效應，薄膜特性利用Transfer Length Method (TLM)技術分析量測濺鍍功率對接觸電阻之影響，透過變溫順偏電流-電壓量測計算得出蕭基能障高度，經由霍爾效應分析儀獲得薄膜電阻率、載子移動率及濃度等薄膜電性，並藉由熱電子型場發射掃描式電子顯微鏡及X光繞射儀分別獲取薄膜厚度、晶粒大小、晶格方向等薄膜特性。實驗結果顯示，氧化銦錫濺鍍在透明玻璃基板上，其濺鍍功率從50 W提升到200 W，可從霍爾效應分析儀之量測結果發現電阻率由9.51*10^-1 Ω-cm下降到1.60*10^-3 Ω-cm，若濺鍍功率超過200 W，靶材表面有放電現象影響實驗結果，為保護靶材不受損，第二階段實驗使用200 W為主要濺鍍功率，在真空中通入高純度氧氣使靶材表面氧化可將電阻率從1.60*10^-3 Ω-cm降至9.56*10^-4 Ω-cm，最後研究氧化銦錫濺鍍功率在100 W、150 W以及200 W下與負型矽介面之接觸電阻及蕭基能障的影響。實驗結果顯示，在功率為200 W及靶材通入純氧氧化下可獲得最佳接觸電阻為2.30*10^-4 Ω-cm^2及蕭基能障高度為0.319 eV及晶粒大小為4.98 nm。.
520 3 $a Schottky barrier (SB) characteristics at the interface of N-type monocrystalline silicon and indium tin oxide (ITO) were investigated in this thesis. ITO has low electrical resistance and high transparency, making it suitable for use as the connecting layer and electrodes in serially connected solar cells. When ITO is deposited on n-type silicon, the different work functions of indium tin oxide and n-type silicon will result in a high SB, leading to higher serial resistance characteristics in the interface electrical properties. In order to understand the relationship between ITO thin film structure and SB, experimental parameters include varying sputtering power and the oxidation effect of the target material. The thin film characteristics are analyzed using the transfer length method technique to measure the effect of sputtering power on the contact resistance. The height of the SB is calculated through temperature-dependent forward current-voltage measurements. The thin film resistivity, carrier mobility, and concentration, among other thin film electrical properties, are obtained through Hall effect analysis. Furthermore, the thin film thickness, grain size, and crystallographic orientation characteristics are obtained through scanning electron microscopy and X-ray diffraction analysis, respectively. The experimental results indicate that when ITO is sputtered onto a transparent glass substrate, increasing the sputtering power from 50 W to 200 W results in a decrease in resistivity from 9.51 × 10-1 Ω-cm to 1.60 × 10-3 Ω-cm, as observed from measurements obtained via the Hall effect analysis. If the sputtering power exceeds 200 W, there is a discharge phenomenon on the target surface that affects the experimental results. To protect the target from damage, in the second stage of the experiment, a primary sputtering power of 200 W was used, and high-purity oxygen was introduced into the vacuum to oxidize the target surface. This oxidation reduced the resistivity from 1.60 × 10-3 Ω-cm to 9.56 × 10-4 Ω-cm. Finally, the study investigated the influence of ITO sputtering power at 100 W, 150 W, and 200 W on the contact resistance and SB at the interface with n-type silicon. The experimental results demonstrate that the optimal contact resistance of 2.30 × 10-4 Ω-cm2 and a SB height of 0.319 eV, along with a grain size of 4.98 nm, are achieved at a power of 200 W with the introduction of pure oxygen for target oxidation..
563 $a (平裝)
650 # 4 $a 負型單晶矽. $3 1449923
650 # 4 $a 氧化銦錫. $3 997920
650 # 4 $a 蕭基能障. $3 1383454
650 # 4 $a 電阻率. $3 997983
650 # 4 $a 濺鍍功率. $3 1449924
650 # 4 $a n-type monocrystalline silicon. $3 1449925
650 # 4 $a ndium tin oxide. $3 1449926
650 # 4 $a resistivity. $3 1449927
650 # 4 $a sputtering power. $3 1449928
650 # 4 $a Schottky barrier. $3 1449929
856 7 # $u https://handle.ncl.edu.tw/11296/kd64q7 $z 電子資源 $2 http