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(1-x)TiO₂-xSrTiO₃之塊體及薄膜材料之微波介電特性分析 =...

王鈺其

(1-x)TiO₂-xSrTiO₃之塊體及薄膜材料之微波介電特性分析 = = Study of Microwave Dielectric Properties of (1-x)TiO₂-xSrTiO₃ Bulk and Thin Film Materials /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	(1-x)TiO₂-xSrTiO₃之塊體及薄膜材料之微波介電特性分析 =/ 王鈺其.
其他題名:	Study of Microwave Dielectric Properties of (1-x)TiO₂-xSrTiO₃ Bulk and Thin Film Materials /
其他題名:	Study of Microwave Dielectric Properties of (1-x)TiO₂-xSrTiO₃ Bulk and Thin Film Materials.
作者:	王鈺其
出版者:	雲林縣 :國立虎尾科技大學 , : 民113.07.,
面頁冊數:	[9], 79面 :圖, 表 ; : 30公分.;
附註:	指導教授: 沈自.
標題:	二氧化鈦. -
電子資源:	電子資源

(1-x)TiO₂-xSrTiO₃之塊體及薄膜材料之微波介電特性分析 = = Study of Microwave Dielectric Properties of (1-x)TiO₂-xSrTiO₃ Bulk and Thin Film Materials /
王鈺其

(1-x)TiO₂-xSrTiO₃之塊體及薄膜材料之微波介電特性分析 =Study of Microwave Dielectric Properties of (1-x)TiO₂-xSrTiO₃ Bulk and Thin Film Materials /Study of Microwave Dielectric Properties of (1-x)TiO₂-xSrTiO₃ Bulk and Thin Film Materials.王鈺其. - 初版. - 雲林縣 :國立虎尾科技大學 ,民113.07. - [9], 79面 :圖, 表 ;30公分.

指導教授: 沈自.

碩士論文--國立虎尾科技大學電子工程系碩士班.

含參考書目.

本篇論文分成兩部分介紹，第一部分製備(1-x)TiO₂-xSrTiO₃陶瓷塊體材料樣品並量測各種摻雜濃度下之微波介電性質；第二部分製備(1-x)TiO₂-xSrTiO₃薄膜材料並量測在不同氣體濃度濺鍍下樣品之微波介電性質。塊體樣品以固態反應法製備(1-x)TiO₂-xSrTiO₃，樣品煆燒溫度固定為1200℃，燒結溫度分為1200℃和1300℃，燒結時間為2小時。利用網路分析儀以微波柱狀共振技術量測樣品微波介電性質。對於燒結溫度在1200℃之樣品，樣品相對密度呈先上升後下降趨向；對於燒結溫度在1300℃之樣品，樣品相對密度呈先下降後上升趨向。在燒結溫度1300℃及摻雜x=0.075時則有最高之密度；而在燒結溫度1300℃及摻雜x=0.1時有最高介電係數，其介電係數和介電損耗為208和1.08*10⁻³。薄膜樣品以反應性射頻磁控濺鍍法製備(1-x)TiO₂-xSrTiO₃(x=0.075)，薄膜材料為二氧化鈦(TiO₂)和鈦酸鍶(SrTiO₃)。在濺鍍時間、濺鍍功率、濺鍍壓力與玻璃基板加熱溫度相同下，僅改變氬氣(Ar)與氧氣(O₂)濃度來製備薄膜樣品，最後透過網路分析儀以共振腔擾動技術量測不同氣體濃度下樣品的微波介電性質。.

(平裝)Subjects--Topical Terms:

995094
二氧化鈦.

(1-x)TiO₂-xSrTiO₃之塊體及薄膜材料之微波介電特性分析 = = Study of Microwave Dielectric Properties of (1-x)TiO₂-xSrTiO₃ Bulk and Thin Film Materials /
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100 1 $a 王鈺其 $3 1448781
245 1 0 $a (1-x)TiO₂-xSrTiO₃之塊體及薄膜材料之微波介電特性分析 = $b Study of Microwave Dielectric Properties of (1-x)TiO₂-xSrTiO₃ Bulk and Thin Film Materials / $c 王鈺其.
246 1 1 $a Study of Microwave Dielectric Properties of (1-x)TiO₂-xSrTiO₃ Bulk and Thin Film Materials.
250 $a 初版.
260 # $a 雲林縣 : $b 國立虎尾科技大學 , $c 民113.07.
300 $a [9], 79面 : $b 圖, 表 ; $c 30公分.
500 $a 指導教授: 沈自.
500 $a 學年度: 112.
502 $a 碩士論文--國立虎尾科技大學電子工程系碩士班.
504 $a 含參考書目.
520 3 $a 本篇論文分成兩部分介紹，第一部分製備(1-x)TiO₂-xSrTiO₃陶瓷塊體材料樣品並量測各種摻雜濃度下之微波介電性質；第二部分製備(1-x)TiO₂-xSrTiO₃薄膜材料並量測在不同氣體濃度濺鍍下樣品之微波介電性質。塊體樣品以固態反應法製備(1-x)TiO₂-xSrTiO₃，樣品煆燒溫度固定為1200℃，燒結溫度分為1200℃和1300℃，燒結時間為2小時。利用網路分析儀以微波柱狀共振技術量測樣品微波介電性質。對於燒結溫度在1200℃之樣品，樣品相對密度呈先上升後下降趨向；對於燒結溫度在1300℃之樣品，樣品相對密度呈先下降後上升趨向。在燒結溫度1300℃及摻雜x=0.075時則有最高之密度；而在燒結溫度1300℃及摻雜x=0.1時有最高介電係數，其介電係數和介電損耗為208和1.08*10⁻³。薄膜樣品以反應性射頻磁控濺鍍法製備(1-x)TiO₂-xSrTiO₃(x=0.075)，薄膜材料為二氧化鈦(TiO₂)和鈦酸鍶(SrTiO₃)。在濺鍍時間、濺鍍功率、濺鍍壓力與玻璃基板加熱溫度相同下，僅改變氬氣(Ar)與氧氣(O₂)濃度來製備薄膜樣品，最後透過網路分析儀以共振腔擾動技術量測不同氣體濃度下樣品的微波介電性質。.
520 3 $a The thesis is divided into two parts.The first part focuses on the preparation of (1-x)TiO₂-xSrTiO₃ bulk ceramic samples and analyze the microwave dielectric properties under various doping conditions. The second part involves the preparation of(1-x)TiO₂-xSrTiO₃ thin film materials and analyze the microwave dielectric properties under various gas concentrations during sputtering. The bulk samples were prepared using the solid state reaction method. The samples were calcined at a fixed temperature of 1200℃, with sintering temperatures of 1200℃ and 1300℃, and a sintering time of 2 hours. Microwave dielectric properties of the samples were measured using a network analyzer with the microwave post resonance technology. At the temperature of 1200℃, the relative densities of the samples were initially increased followed by a decreasing trend. At 1300℃, the relative densities were an initially decreased followed by an increasing trend. The highest density was observed at the sintering temperature of 1300℃ with doping concentration of x=0.075. The highest dielectric constant was obtained at a sintering temperature of 1300℃ with doping concentration of x=0.1, with dielectric constant and dielectric loss of 208and 1.08x10⁻³. Thin film samples of (1-x)TiO₂-xSrTiO₃(x=0.075) were prepared using the reactive radio frequency magnetron sputtering method, where the raw materials consisted of TiO₂ and SrTiO₃. Keeping the sputtering time, sputtering power, sputtering pressure, and glass substrate heating temperature constant, only the concentrations of Ar and O₂ were varied to prepare the films. Microwave dielectric properties of thin films were measured by the resonant cavity perturbation technique..
563 $a (平裝)
650 # 4 $a 二氧化鈦. $3 995094
650 # 4 $a 鈦酸鍶. $3 1048589
650 # 4 $a 微波. $3 998427
650 # 4 $a 共振腔擾動技術. $3 998549
650 # 4 $a 柱狀共振技術. $3 998548
650 # 4 $a TiO₂. $3 1451640
650 # 4 $a SrTiO₃. $3 1451671
650 # 4 $a Microwave. $3 998546
650 # 4 $a Cavity Perturbation Technique. $3 1451672
650 # 4 $a Post Resonance Method. $3 1151380
856 7 # $u https://handle.ncl.edu.tw/11296/97eu6w $z 電子資源 $2 http