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錫摻雜氧化鎵薄膜之研製 = = Study on tin-doped g...

鄭暐泓

錫摻雜氧化鎵薄膜之研製 = = Study on tin-doped gallium oxide thin films /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	錫摻雜氧化鎵薄膜之研製 =/ 鄭暐泓.
Reminder of title:	Study on tin-doped gallium oxide thin films /
remainder title:	Study on tin-doped gallium oxide thin films.
Author:	鄭暐泓
Published:	雲林縣 :國立虎尾科技大學 , : 民113.07.,
Description:	[8], 53面 :圖, 表 ; : 30公分.;
Notes:	指導教授: 雷伯薰.
Subject:	peroxide. -
Online resource:	電子資源

錫摻雜氧化鎵薄膜之研製 = = Study on tin-doped gallium oxide thin films /
鄭暐泓

錫摻雜氧化鎵薄膜之研製 =Study on tin-doped gallium oxide thin films /Study on tin-doped gallium oxide thin films.鄭暐泓. - 初版. - 雲林縣 :國立虎尾科技大學 ,民113.07. - [8], 53面 :圖, 表 ;30公分.

指導教授: 雷伯薰.

碩士論文--國立虎尾科技大學光電工程系光電與材料科技碩士班.

含參考書目.

本論文以氯化鎵(GaCl3)飽和溶液為鎵源、過氧化氫(H2O2)為氧源並二氯化錫(SnCl2)為錫摻雜源製作n型氧化鎵(n-Ga2O3)旋塗溶液，並以旋轉塗佈方式分別在玻璃基板、矽基板與藍寶石基板上成長錫摻雜n型氧化鎵薄膜，最後再以高溫爐管進行退火以改善薄膜特性。先以不同莫爾數的二氯化錫粉末、氯化鎵粉末以及過氧化氫溶液配置不同錫摻雜n型氧化鎵(n-Ga2O3)旋塗溶液進行薄膜成長，接著以高退火溫度來改善薄膜的光電特性。在薄膜特性分析部分，以掃描式電子顯微鏡(SEM) 、能量色散X-射線光譜(EDX) 、X射線繞射儀(XRD)分析薄膜的組成與結晶結構，以霍爾量測系統、紫外線-可見光光譜儀(UV-Vis Spectrum)分析探討薄膜之光電特性。.

(平裝)Subjects--Topical Terms:

1449862
peroxide.

錫摻雜氧化鎵薄膜之研製 = = Study on tin-doped gallium oxide thin films /
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245 1 0 $a 錫摻雜氧化鎵薄膜之研製 = $b Study on tin-doped gallium oxide thin films / $c 鄭暐泓.
246 1 1 $a Study on tin-doped gallium oxide thin films.
250 $a 初版.
260 # $a 雲林縣 : $b 國立虎尾科技大學 , $c 民113.07.
300 $a [8], 53面 : $b 圖, 表 ; $c 30公分.
500 $a 指導教授: 雷伯薰.
500 $a 學年度: 112.
502 $a 碩士論文--國立虎尾科技大學光電工程系光電與材料科技碩士班.
504 $a 含參考書目.
520 3 $a 本論文以氯化鎵(GaCl3)飽和溶液為鎵源、過氧化氫(H2O2)為氧源並二氯化錫(SnCl2)為錫摻雜源製作n型氧化鎵(n-Ga2O3)旋塗溶液，並以旋轉塗佈方式分別在玻璃基板、矽基板與藍寶石基板上成長錫摻雜n型氧化鎵薄膜，最後再以高溫爐管進行退火以改善薄膜特性。先以不同莫爾數的二氯化錫粉末、氯化鎵粉末以及過氧化氫溶液配置不同錫摻雜n型氧化鎵(n-Ga2O3)旋塗溶液進行薄膜成長，接著以高退火溫度來改善薄膜的光電特性。在薄膜特性分析部分，以掃描式電子顯微鏡(SEM) 、能量色散X-射線光譜(EDX) 、X射線繞射儀(XRD)分析薄膜的組成與結晶結構，以霍爾量測系統、紫外線-可見光光譜儀(UV-Vis Spectrum)分析探討薄膜之光電特性。.
520 3 $a A treatment solution composed of a saturated gallium chloride solution (GaCl3) as the gallium source, a diluted hydrogen peroxide (H2O2) as the oxygen source, and a tin chloride (SnCl2) solution as the doping source was prepared to grow n-type gallium oxide (Ga2O3) thin films in this thesis. The treatment solution was spin-coated on the glass, silicon, and sapphire substrates. The n-type Ga2O3 thin films were formed on these substrates by flowing thermal annealing process. To obtain the optimal n-type Ga2O3 thin film, varied mole number of SnCl2 and GaCl3 powder, and changed concentration of H2O2 aqueous solution were used to prepare the treatment solutions. A thermal annealing process with different annealing temperature was then applied to the as-grown thin films to improve the crystalline, optical, and electrical properties of n-type Ga2O3 thin films. These properties were achieved by SEM, EDX, XRD, Hall measurement, and UV-Vis Spectrum system..
563 $a (平裝)
650 # 4 $a peroxide. $3 1449862
650 # 4 $a gallium chloride $a tin dichloride. $3 1449861
650 # 4 $a hydrogen. $3 1015150
650 # 4 $a gallium oxide. $3 1449860
650 # 4 $a spin-coating method. $3 1449859
650 # 4 $a 二氯化錫. $3 1449858
650 # 4 $a 過氧化氫. $3 1421666
650 # 4 $a 氯化鎵. $3 1421665
650 # 4 $a 氧化鎵. $3 1421618
650 # 4 $a 旋轉塗佈法. $3 1003718
856 7 # $u https://handle.ncl.edu.tw/11296/553w29 $z 電子資源 $2 http