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氧電漿蝕刻技術對於自組裝奈米球之影響及其應用於提升有機矽基疏水膜特性之研...

蔡璨澤

氧電漿蝕刻技術對於自組裝奈米球之影響及其應用於提升有機矽基疏水膜特性之研究 = = A study on the self-assembled nanospheres affects by the oxygen plasma etching and its application for improving the hydrophobicity of a organosilicon thin film /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	氧電漿蝕刻技術對於自組裝奈米球之影響及其應用於提升有機矽基疏水膜特性之研究 =/ 蔡璨澤.
其他題名:	A study on the self-assembled nanospheres affects by the oxygen plasma etching and its application for improving the hydrophobicity of a organosilicon thin film /
其他題名:	A study on the self-assembled nanospheres affects by the oxygen plasma etching and its application for improving the hydrophobicity of a organosilicon thin film.
作者:	蔡璨澤
出版者:	雲林縣 :國立虎尾科技大學 , : 民113.07.,
面頁冊數:	[10], 74面 :圖, 表 ; : 30公分.;
附註:	指導教授: 劉代山.
標題:	氧電漿蝕刻技術. -
電子資源:	電子資源

氧電漿蝕刻技術對於自組裝奈米球之影響及其應用於提升有機矽基疏水膜特性之研究 = = A study on the self-assembled nanospheres affects by the oxygen plasma etching and its application for improving the hydrophobicity of a organosilicon thin film /
蔡璨澤

氧電漿蝕刻技術對於自組裝奈米球之影響及其應用於提升有機矽基疏水膜特性之研究 =A study on the self-assembled nanospheres affects by the oxygen plasma etching and its application for improving the hydrophobicity of a organosilicon thin film /A study on the self-assembled nanospheres affects by the oxygen plasma etching and its application for improving the hydrophobicity of a organosilicon thin film.蔡璨澤. - 初版. - 雲林縣 :國立虎尾科技大學 ,民113.07. - [10], 74面 :圖, 表 ;30公分.

指導教授: 劉代山.

碩士論文--國立虎尾科技大學光電工程系光電與材料科技碩士班.

含參考書目.

本研究首先利用射頻磁控共濺鍍系統在基板上沉積氧化鋅薄膜，接著使用電漿增強化學氣相沉積法和旋轉塗佈法，在經氧電漿親水處理的四甲基矽烷上製備單層聚苯乙烯奈米球。為了利用鹽酸濕式蝕刻提高氧化鋅層的粗糙度，再以氧電漿蝕刻聚苯乙烯奈米球及有機矽基層，使氧化鋅層露出，最後移除奈米球，並在粗糙化的表面上沉積有機矽基薄膜以完成製程。本研究首先探討不同氧電漿參數下奈米球粒徑大小與分佈的變化，以達到最佳製程效果，隨後研究氧電漿蝕刻對有機矽基層的影響。結果顯示，使用奈米球作為遮罩無法有效蝕刻有機矽基層以達到粗糙化目的。為了解決這一問題，先沉積氧化鋅薄膜作為粗化膜層，並在有奈米球遮罩的情況下，分析氧化鋅經鹽酸蝕刻後的情形。最後探討在粗糙化表面上沉積的有機矽基薄膜對疏水特性的影響。使材料具有疏水性能達到防水效果，保護物品結構免受潮濕或水損害，也使汙垢和液體難以附著，因此清潔起來更容易和迅速。.

(平裝)Subjects--Topical Terms:

1449846
氧電漿蝕刻技術.

氧電漿蝕刻技術對於自組裝奈米球之影響及其應用於提升有機矽基疏水膜特性之研究 = = A study on the self-assembled nanospheres affects by the oxygen plasma etching and its application for improving the hydrophobicity of a organosilicon thin film /
LDR:03981cam a2200241 i 4500 001 1130006
008 241015s2024 ch ak erm 000 0 chi d
035 $a (THES)112NYPI0124044
040 $a NFU $b chi $c NFU $e CCR
041 0 # $a chi $b chi $b eng
084 $a 008.166M $b 4413:4 113 $2 ncsclt
100 1 $a 蔡璨澤 $3 1449040
245 1 0 $a 氧電漿蝕刻技術對於自組裝奈米球之影響及其應用於提升有機矽基疏水膜特性之研究 = $b A study on the self-assembled nanospheres affects by the oxygen plasma etching and its application for improving the hydrophobicity of a organosilicon thin film / $c 蔡璨澤.
246 1 1 $a A study on the self-assembled nanospheres affects by the oxygen plasma etching and its application for improving the hydrophobicity of a organosilicon thin film.
250 $a 初版.
260 # $a 雲林縣 : $b 國立虎尾科技大學 , $c 民113.07.
300 $a [10], 74面 : $b 圖, 表 ; $c 30公分.
500 $a 指導教授: 劉代山.
500 $a 學年度: 112.
502 $a 碩士論文--國立虎尾科技大學光電工程系光電與材料科技碩士班.
504 $a 含參考書目.
520 3 $a 本研究首先利用射頻磁控共濺鍍系統在基板上沉積氧化鋅薄膜，接著使用電漿增強化學氣相沉積法和旋轉塗佈法，在經氧電漿親水處理的四甲基矽烷上製備單層聚苯乙烯奈米球。為了利用鹽酸濕式蝕刻提高氧化鋅層的粗糙度，再以氧電漿蝕刻聚苯乙烯奈米球及有機矽基層，使氧化鋅層露出，最後移除奈米球，並在粗糙化的表面上沉積有機矽基薄膜以完成製程。本研究首先探討不同氧電漿參數下奈米球粒徑大小與分佈的變化，以達到最佳製程效果，隨後研究氧電漿蝕刻對有機矽基層的影響。結果顯示，使用奈米球作為遮罩無法有效蝕刻有機矽基層以達到粗糙化目的。為了解決這一問題，先沉積氧化鋅薄膜作為粗化膜層，並在有奈米球遮罩的情況下，分析氧化鋅經鹽酸蝕刻後的情形。最後探討在粗糙化表面上沉積的有機矽基薄膜對疏水特性的影響。使材料具有疏水性能達到防水效果，保護物品結構免受潮濕或水損害，也使汙垢和液體難以附著，因此清潔起來更容易和迅速。.
520 3 $a In this study, a radio frequency magnetron co-sputtering system was used to deposit a zinc oxide film, and then plasma enhanced chemical vapor deposition (PECVD) and spin coating were used to prepare a single layer of polystyrene nanospheres on tetramethylsilane treated with oxygen plasma hydrophilization. For nanoballs, in order to use hydrochloric acid to wet-etch the zinc oxide layer to improve the overall roughness, oxygen plasma is used to etch the polystyrene nanoballs and the organic silicon base layer to expose the zinc oxide layer. Finally, Lift off the nanospheres.Depositing an organic silicon-based film on the roughened surface completes the process. This article first discusses the changes in particle size and distribution of nanospheres under different oxygen plasma parameters to achieve the purpose of the process, and then studies the impact of oxygen plasma etching on the organic silicon base layer. The results show that the Using nanoballs as a mask cannot effectively etch the organic silicon base layer to roughening. In order to achieve the purpose of roughening, a zinc oxide film will be deposited first as a roughened film layer and analyzed under the conditions of nanoball masking. The situation of zinc oxide after being etched with hydrochloric acid, and finally the influence of the organic silicon-based film deposited under the roughened surface on the hydrophobic properties is discussed. Making the material hydrophobic makes it water-resistant, protecting the structure of items from moisture or water damage and making it difficult for dirt and liquids to adhere, so cleaning is easier and faster..
563 $a (平裝)
650 # 4 $a 氧電漿蝕刻技術. $3 1449846
650 # 4 $a 聚苯乙烯奈米球. $3 1339455
650 # 4 $a 有機矽基薄膜. $3 1086398
650 # 4 $a 疏水特性. $3 1126950
650 # 4 $a Oxygen plasma etching technology. $3 1449847
650 # 4 $a polystyrene nanospheres. $3 1339460
650 # 4 $a silicone based film. $3 1449848
650 # 4 $a hydrophobic properties. $3 1449849
856 7 # $u https://handle.ncl.edu.tw/11296/wv9w23 $z 電子資源 $2 http