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Electronic Transport Properties of Novel Correlated and Disorder-Induced Insulators.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Electronic Transport Properties of Novel Correlated and Disorder-Induced Insulators./
作者:	Mazzucca, Nicholas.
面頁冊數:	1 online resource (116 pages)
附註:	Source: Dissertations Abstracts International, Volume: 85-04, Section: B.
Contained By:	Dissertations Abstracts International85-04B.
標題:	Physics. -
電子資源:	click for full text (PQDT)
ISBN:	9798380595902

Electronic Transport Properties of Novel Correlated and Disorder-Induced Insulators.
Mazzucca, Nicholas.

Electronic Transport Properties of Novel Correlated and Disorder-Induced Insulators. - 1 online resource (116 pages)

Source: Dissertations Abstracts International, Volume: 85-04, Section: B.

Thesis (Ph.D.)--The Ohio State University, 2023.

Includes bibliographical references

Nominally metallic systems can be rendered insulating by electronic interactions, disorder, or both, leading to a myriad of interesting many-body phases. In this thesis, we present electronic transport data on a variety of such insulator materials, each with their own unique emergent phenomena. We start with few-layer graphene (FLG), the multilayer counterpart to monolayer graphene, and show that electronic interactions can lead to the development of an electronic energy gap in the band structure near charge neutrality. Previously, this has been associated with spontaneous inversion symmetry breaking, but has only been observed in suspended devices of the highest quality. Here, we show that similar physics can be observed in hexagonal boron nitride-encapsulated devices, alleviating the requirement for suspension. Moreover, in very thick FLG samples, typically thick enough to be considered as three-dimensional graphite, we show the existence of fractional quantum Hall states that are extended through the bulk of the material. Next, we turn to Pt-doped TiSe2, where the interplay between a charge density wave state and a newly discovered quasi one-dimensional insulating state gives rise to ultra slow time-scale physics, along with a strong resistance anisotropy. Finally, transport data as well as angle-resolved photoemission spectroscopy data on Se-doped Ge2Sb2Te5 devices are shown. Here, a disorder-induced metal-to-insulator transition exhibits unique properties, which we attribute to the onset of strong electronic interactions.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9798380595902Subjects--Topical Terms:

564049
Physics.
Subjects--Index Terms:

GrapheneIndex Terms--Genre/Form:

554714
Electronic books.

Electronic Transport Properties of Novel Correlated and Disorder-Induced Insulators.
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