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Modeling Electronic Conduction in Quantum Dot Materials.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Modeling Electronic Conduction in Quantum Dot Materials./
作者:	Eshraghi, Kassra.
面頁冊數:	1 online resource (39 pages)
附註:	Source: Masters Abstracts International, Volume: 85-07.
Contained By:	Masters Abstracts International85-07.
標題:	Transportation. -
電子資源:	click for full text (PQDT)
ISBN:	9798381302301

Modeling Electronic Conduction in Quantum Dot Materials.
Eshraghi, Kassra.

Modeling Electronic Conduction in Quantum Dot Materials. - 1 online resource (39 pages)

Source: Masters Abstracts International, Volume: 85-07.

Thesis (M.S.)--University of California, San Diego, 2023.

Includes bibliographical references

Aspects of electrical transport within quantum dot (QD) constituted films are discussed. It is shown that the photoemission efficiency from QD films could be improved by further electrical biasing of devices, owing to the enhancement of tunneling transport. It is also shown that experimentally obtained I-V curves could be described through a 2-step model involving (i) a the tunneling transport of electrons from an electron source, and (ii) Ohmic transport through the film, governed by a temperature (T) dependent mobility. Aspects related to future endeavors in modeling QD materials are also discussed.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9798381302301Subjects--Topical Terms:

558117
Transportation.
Subjects--Index Terms:

ModelingIndex Terms--Genre/Form:

554714
Electronic books.

Modeling Electronic Conduction in Quantum Dot Materials.
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500 $a Advisor: Bandaru, Prabhakar.
502 $a Thesis (M.S.)--University of California, San Diego, 2023.
504 $a Includes bibliographical references
520 $a Aspects of electrical transport within quantum dot (QD) constituted films are discussed. It is shown that the photoemission efficiency from QD films could be improved by further electrical biasing of devices, owing to the enhancement of tunneling transport. It is also shown that experimentally obtained I-V curves could be described through a 2-step model involving (i) a the tunneling transport of electrons from an electron source, and (ii) Ohmic transport through the film, governed by a temperature (T) dependent mobility. Aspects related to future endeavors in modeling QD materials are also discussed.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2024
538 $a Mode of access: World Wide Web
650 4 $a Transportation. $3 558117
650 4 $a Quantum physics. $3 1179090
650 4 $a Physics. $3 564049
650 4 $a Materials science. $3 557839
653 $a Modeling
653 $a Photoemission
653 $a Semiconductor
653 $a Transport
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690 $a 0599
690 $a 0605
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