國立虎尾科技大學 |

Growth and Emergent Functionalities of Oxide Thin Films Utilizing Interface Engineering.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Growth and Emergent Functionalities of Oxide Thin Films Utilizing Interface Engineering./
Author:	Yang, Detian.
Description:	1 online resource (171 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 85-01, Section: B.
Contained By:	Dissertations Abstracts International85-01B.
Subject:	Physics. -
Online resource:	click for full text (PQDT)
ISBN:	9798379896638

Growth and Emergent Functionalities of Oxide Thin Films Utilizing Interface Engineering.
Yang, Detian.

Growth and Emergent Functionalities of Oxide Thin Films Utilizing Interface Engineering. - 1 online resource (171 pages)

Source: Dissertations Abstracts International, Volume: 85-01, Section: B.

Thesis (Ph.D.)--The University of Nebraska - Lincoln, 2023.

Includes bibliographical references

Complex oxide interfaces have offered intriguing novel emergent phenomena and multiple functionalities through interfacial reconstructions of spin, orbital, charge, and lattice degrees of freedom. Interface engineering via manipulating interfacial interaction, defects and multiple interfacial quantum charges and orders constitutes the essential method and technique to achieve desired functionalities in oxide heterostructures. In this thesis, shown are two examples of utilizing interfacial reconstruction and interfacial strain engineering to achieve intrinsic exchange bias and realize epitaxial growth of mixed-valence hexagonal manganite thin films, respectively.Firstly, we demonstrated intrinsic exchange bias induced by interfacial reconstruction in NixCoyFe3-x-yO4(111)/α-Al2O3(0001) (0≤x+y≤3) tunable beyond the coercivity. The "hidden" antiferromagnet is proposed to be the rock-salt CoO in the interfacial layer, supported by the data of reflection high energy electron diffraction (RHEED), magnetization characterization, X-ray photoemission spectroscopy, X-ray reflectometry and polarized neutron reflectometry. Such interfacial reconstruction and intrinsic exchange bias can be tuned by Co concentration y and the growth oxygen pressure. This study establishes new material platforms to study novel interfacial structural and magnetic states supporting potential applications in magnetic storage and spintronics and highlight the powerful interface engineering strategy in manipulating material functionalities.Secondly, we have managed to stabilize h-Lu1-xCaxMnO3 (x=0.1,0.2,0.3,0.4,0.5) epitaxial thin films over sapphire and YSZ substrates via pre-depositing a 1 nm h-ReFeO3 or h-ReMnO3 (Re= Y, Ho-Lu, Sc) buffer layer. By selecting varying combinations of buffer layers and substrates, epitaxial h-Lu1- xCaxMnO3 films with both compressive and tensile strain were achieved to certain maximum thicknesses. In h-Lu1-xCaxMnO3/h-ScFeO3/α-Al2O3 samples, thickness-resolved and temperature-resolved RHEED patterns reveal that the geometric polar distortion could be boosted by the doping of Ca, when the doping concentration x ≥ 0.2, the common interface clamping effect that suppresses ferroelectric distortion in the first unit cell of h-ReMnO3 can be eliminated. This work establishes a potential quasi-2D ferroelectric system and suggests a general strain engineering method to strengthen improper ferroelectricity in the ultra-thin regime.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9798379896638Subjects--Topical Terms:

564049
Physics.
Subjects--Index Terms:

Exchange biasIndex Terms--Genre/Form:

554714
Electronic books.

Growth and Emergent Functionalities of Oxide Thin Films Utilizing Interface Engineering.
LDR:03902ntm a22004097 4500 001 1143820
005 20240517105001.5
006 m o d
007 cr mn ---uuuuu
008 250605s2023 xx obm 000 0 eng d
020 $a 9798379896638
035 $a (MiAaPQ)AAI30567441
035 $a AAI30567441
040 $a MiAaPQ $b eng $c MiAaPQ $d NTU
100 1 $a Yang, Detian. $3 1468619
245 1 0 $a Growth and Emergent Functionalities of Oxide Thin Films Utilizing Interface Engineering.
264 0 $c 2023
300 $a 1 online resource (171 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 85-01, Section: B.
500 $a Advisor: Xu, Xiaoshan.
502 $a Thesis (Ph.D.)--The University of Nebraska - Lincoln, 2023.
504 $a Includes bibliographical references
520 $a Complex oxide interfaces have offered intriguing novel emergent phenomena and multiple functionalities through interfacial reconstructions of spin, orbital, charge, and lattice degrees of freedom. Interface engineering via manipulating interfacial interaction, defects and multiple interfacial quantum charges and orders constitutes the essential method and technique to achieve desired functionalities in oxide heterostructures. In this thesis, shown are two examples of utilizing interfacial reconstruction and interfacial strain engineering to achieve intrinsic exchange bias and realize epitaxial growth of mixed-valence hexagonal manganite thin films, respectively.Firstly, we demonstrated intrinsic exchange bias induced by interfacial reconstruction in NixCoyFe3-x-yO4(111)/α-Al2O3(0001) (0≤x+y≤3) tunable beyond the coercivity. The "hidden" antiferromagnet is proposed to be the rock-salt CoO in the interfacial layer, supported by the data of reflection high energy electron diffraction (RHEED), magnetization characterization, X-ray photoemission spectroscopy, X-ray reflectometry and polarized neutron reflectometry. Such interfacial reconstruction and intrinsic exchange bias can be tuned by Co concentration y and the growth oxygen pressure. This study establishes new material platforms to study novel interfacial structural and magnetic states supporting potential applications in magnetic storage and spintronics and highlight the powerful interface engineering strategy in manipulating material functionalities.Secondly, we have managed to stabilize h-Lu1-xCaxMnO3 (x=0.1,0.2,0.3,0.4,0.5) epitaxial thin films over sapphire and YSZ substrates via pre-depositing a 1 nm h-ReFeO3 or h-ReMnO3 (Re= Y, Ho-Lu, Sc) buffer layer. By selecting varying combinations of buffer layers and substrates, epitaxial h-Lu1- xCaxMnO3 films with both compressive and tensile strain were achieved to certain maximum thicknesses. In h-Lu1-xCaxMnO3/h-ScFeO3/α-Al2O3 samples, thickness-resolved and temperature-resolved RHEED patterns reveal that the geometric polar distortion could be boosted by the doping of Ca, when the doping concentration x ≥ 0.2, the common interface clamping effect that suppresses ferroelectric distortion in the first unit cell of h-ReMnO3 can be eliminated. This work establishes a potential quasi-2D ferroelectric system and suggests a general strain engineering method to strengthen improper ferroelectricity in the ultra-thin regime.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2024
538 $a Mode of access: World Wide Web
650 4 $a Physics. $3 564049
650 4 $a Condensed matter physics. $3 1148471
650 4 $a Analytical chemistry. $3 1182118
650 4 $a Electrical engineering. $3 596380
653 $a Exchange bias
653 $a Hexagonal manganites
653 $a Ferroelectricity
653 $a Interface engineering
653 $a Interfacial reconstruction
655 7 $a Electronic books. $2 local $3 554714
690 $a 0605
690 $a 0544
690 $a 0486
690 $a 0611
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a The University of Nebraska - Lincoln. $b Physics & Astronomy. $3 1187630
773 0 $t Dissertations Abstracts International $g 85-01B.
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30567441 $z click for full text (PQDT)