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Extreme Ultraviolet Lensless Microscopy : = Development and Potential Applications to Semiconductor Metrology.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Extreme Ultraviolet Lensless Microscopy :/
Reminder of title:	Development and Potential Applications to Semiconductor Metrology.
Author:	Wang, Bin.
Description:	1 online resource (140 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 84-07, Section: B.
Contained By:	Dissertations Abstracts International84-07B.
Subject:	Physics. -
Online resource:	click for full text (PQDT)
ISBN:	9798363507953

Extreme Ultraviolet Lensless Microscopy : = Development and Potential Applications to Semiconductor Metrology.
Wang, Bin.

Extreme Ultraviolet Lensless Microscopy :Development and Potential Applications to Semiconductor Metrology. - 1 online resource (140 pages)

Source: Dissertations Abstracts International, Volume: 84-07, Section: B.

Thesis (Ph.D.)--University of Colorado at Boulder, 2022.

Includes bibliographical references

The development and integration of next-generation semiconductor devices is experiencing significant metrology challenges. These devices are ever more complex and three-dimensional in shape and contain ever more types of materials, with critical dimensions of only a few tens of nanometers, or even down to a few nanometers. The structure and composition of these devices, while critical to their overall performance, is extremely difficult to measure non-destructively. Thus, there is an urgent need for non-destructive nano-imaging techniques for general nextgeneration samples. In this thesis, I present the recent development of EUV lensless microscopy by combining the tabletop coherent extreme ultraviolet light sources based on high harmonic generation and the state-of-the-art computational phase retrieval algorithms (ptychography), as well as their potential applications to semiconductor metrology. In particular, I will present our work on designing and commissioning a tabletop EUV actinic microscope that is capable of performing at-wavelength EUV photomask imaging and defect inspection. We further demonstrated for the first time that fast, reliable and robust ptychographic imaging of periodic structures can be achieved by careful illumination design. This is both a critical advancement for the modern ptychography technique and a promising and economic solution for actinic EUV photomask metrology.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9798363507953Subjects--Topical Terms:

564049
Physics.
Subjects--Index Terms:

Actinic metrologyIndex Terms--Genre/Form:

554714
Electronic books.

Extreme Ultraviolet Lensless Microscopy : = Development and Potential Applications to Semiconductor Metrology.
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