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Electrodeposition of Compound Semiconductor Thin Films Using E-ALD Processes.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Electrodeposition of Compound Semiconductor Thin Films Using E-ALD Processes./
作者:	Sisk, Peter W.
面頁冊數:	1 online resource (126 pages)
附註:	Source: Dissertations Abstracts International, Volume: 81-12, Section: B.
Contained By:	Dissertations Abstracts International81-12B.
標題:	Materials science. -
電子資源:	click for full text (PQDT)
ISBN:	9798645491338

Electrodeposition of Compound Semiconductor Thin Films Using E-ALD Processes.
Sisk, Peter W.

Electrodeposition of Compound Semiconductor Thin Films Using E-ALD Processes. - 1 online resource (126 pages)

Source: Dissertations Abstracts International, Volume: 81-12, Section: B.

Thesis (Ph.D.)--University of Georgia, 2020.

Includes bibliographical references

Using Electrochemical Atomic Layer Deposition (E-ALD) and its one-solution counterpart, Potential Pulse Atomic Layer Deposition (PP-ALD), programs were developed for the deposition of compound semiconductor thin films. Both E-ALD and PP-ALD utilize the property of underpotential deposition (UPD), but while E-ALD requires solution switching, PP-ALD is done from one solution bottle. The PP-ALD deposition requires careful alternation of cathodic and anodic pulses to limit the material deposited. This allows for PP-ALD to be a much faster deposition process, but it can be more challenging to design a deposition program as both solutions must be soluble in the same pH's and deposit and strip at similar electrochemical potentials. By choosing optimal parameters governed by the Nernst equation such as pH, potential, and precursor concentration as well as physical conditions such as duty time, light exposure, and supporting electrolyte concentration, optimal deposition conditions can be achieved using both processes. Use of cyclic voltammetry and current-time traces allow for the monitoring of the deposition process in-situ while a variety of characterization methods can be used on the thin films after the deposition process is complete. Morphology of the deposits was characterized using SEM while the structural composition was analyzed with EDX and EPMA. Structural characterization was done by XRD and Raman Spectroscopy. Many different semiconductor compounds can be formed using E-ALD processes. In2Se3 and InSe are interesting as potential photoanodes or photocathodes in a photoelectrochemical cell but can also be combined with other binary compounds into the super-structure, Copper Indium Gallium Selenide (CIGS) as well for solar cell use. GeTe is often used in Phase Change Random Access Memory (PRAM) applications as a phase change material due to its stable amorphous and crystalline states as well as its fast switching speed. Lastly, when combined with Surface Limited Redox Replacement (SLRR), E-ALD allows for the conformal deposition of epitaxial layers of noble metals such as Cu and Au which can serve as capping layers to protect the underlying films from unwanted oxidation.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9798645491338Subjects--Topical Terms:

557839
Materials science.
Subjects--Index Terms:

Thin filmsIndex Terms--Genre/Form:

554714
Electronic books.

Electrodeposition of Compound Semiconductor Thin Films Using E-ALD Processes.
LDR:03500ntm a22003617 4500 001 1145427
005 20240624103647.5
006 m o d
007 cr bn ---uuuuu
008 250605s2020 xx obm 000 0 eng d
020 $a 9798645491338
035 $a (MiAaPQ)AAI27830889
035 $a AAI27830889
040 $a MiAaPQ $b eng $c MiAaPQ $d NTU
100 1 $a Sisk, Peter W. $3 1437628
245 1 0 $a Electrodeposition of Compound Semiconductor Thin Films Using E-ALD Processes.
264 0 $c 2020
300 $a 1 online resource (126 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 81-12, Section: B.
500 $a Advisor: Stickney, John L.
502 $a Thesis (Ph.D.)--University of Georgia, 2020.
504 $a Includes bibliographical references
520 $a Using Electrochemical Atomic Layer Deposition (E-ALD) and its one-solution counterpart, Potential Pulse Atomic Layer Deposition (PP-ALD), programs were developed for the deposition of compound semiconductor thin films. Both E-ALD and PP-ALD utilize the property of underpotential deposition (UPD), but while E-ALD requires solution switching, PP-ALD is done from one solution bottle. The PP-ALD deposition requires careful alternation of cathodic and anodic pulses to limit the material deposited. This allows for PP-ALD to be a much faster deposition process, but it can be more challenging to design a deposition program as both solutions must be soluble in the same pH's and deposit and strip at similar electrochemical potentials. By choosing optimal parameters governed by the Nernst equation such as pH, potential, and precursor concentration as well as physical conditions such as duty time, light exposure, and supporting electrolyte concentration, optimal deposition conditions can be achieved using both processes. Use of cyclic voltammetry and current-time traces allow for the monitoring of the deposition process in-situ while a variety of characterization methods can be used on the thin films after the deposition process is complete. Morphology of the deposits was characterized using SEM while the structural composition was analyzed with EDX and EPMA. Structural characterization was done by XRD and Raman Spectroscopy. Many different semiconductor compounds can be formed using E-ALD processes. In2Se3 and InSe are interesting as potential photoanodes or photocathodes in a photoelectrochemical cell but can also be combined with other binary compounds into the super-structure, Copper Indium Gallium Selenide (CIGS) as well for solar cell use. GeTe is often used in Phase Change Random Access Memory (PRAM) applications as a phase change material due to its stable amorphous and crystalline states as well as its fast switching speed. Lastly, when combined with Surface Limited Redox Replacement (SLRR), E-ALD allows for the conformal deposition of epitaxial layers of noble metals such as Cu and Au which can serve as capping layers to protect the underlying films from unwanted oxidation.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2024
538 $a Mode of access: World Wide Web
650 4 $a Materials science. $3 557839
650 4 $a Analytical chemistry. $3 1182118
653 $a Thin films
653 $a Semiconductors
653 $a Underpotential deposition
655 7 $a Electronic books. $2 local $3 554714
690 $a 0486
690 $a 0794
710 2 $a University of Georgia. $b Chemistry - PHD. $3 1437629
710 2 $a ProQuest Information and Learning Co. $3 1178819
773 0 $t Dissertations Abstracts International $g 81-12B.
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27830889 $z click for full text (PQDT)