國立虎尾科技大學 |

Organic thin-film transistors for flexible CMOS integration.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Organic thin-film transistors for flexible CMOS integration./
作者:	Perez, Michael Ramon.
面頁冊數:	1 online resource (178 pages)
附註:	Source: Dissertations Abstracts International, Volume: 75-01, Section: B.
Contained By:	Dissertations Abstracts International75-01B.
標題:	Materials science. -
電子資源:	click for full text (PQDT)
ISBN:	9781303137068

Organic thin-film transistors for flexible CMOS integration.
Perez, Michael Ramon.

Organic thin-film transistors for flexible CMOS integration. - 1 online resource (178 pages)

Source: Dissertations Abstracts International, Volume: 75-01, Section: B.

Thesis (Ph.D.)--The University of Texas at Dallas, 2013.

Includes bibliographical references

In this work a fully photolithographically defined complementary metal oxide semiconductor (CMOS) device is fabricated. Particular focus was on the use of solution based materials for device integration. P-type and n-type materials were evaluated for use in an organic thin film transistor (OTFT) device. The reliability and organic thin-film transistor performance of solution based dielectric polymeric dielectric materials are presented. Fabrication and characterization of integrated hybrid complementary metal oxide semiconductor devices (CMOS) using 6, 13-bis (triisopropylsilylethynyl) pentacene (TIPS-PC) and cadmium sulfide (CdS) as the active layers deposited using solution based processes are demonstrated. The hybrid CMOS technology demonstrated is compatible with large-area and mechanically flexible substrates given the low temperature processing (<100°C) and scalable design. Devices evaluated are diodes, n- and p-type thin film transistors (TFTs), inverters, NAND and NOR gates. The inverters exhibited a DC gain of ≈52 V/V with full rail-to-rail switching. The NAND logic gates switch rail-to-rail with a transition point of V DD/2.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9781303137068Subjects--Topical Terms:

557839
Materials science.
Subjects--Index Terms:

CMOSIndex Terms--Genre/Form:

554714
Electronic books.

Organic thin-film transistors for flexible CMOS integration.
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504 $a Includes bibliographical references
520 $a In this work a fully photolithographically defined complementary metal oxide semiconductor (CMOS) device is fabricated. Particular focus was on the use of solution based materials for device integration. P-type and n-type materials were evaluated for use in an organic thin film transistor (OTFT) device. The reliability and organic thin-film transistor performance of solution based dielectric polymeric dielectric materials are presented. Fabrication and characterization of integrated hybrid complementary metal oxide semiconductor devices (CMOS) using 6, 13-bis (triisopropylsilylethynyl) pentacene (TIPS-PC) and cadmium sulfide (CdS) as the active layers deposited using solution based processes are demonstrated. The hybrid CMOS technology demonstrated is compatible with large-area and mechanically flexible substrates given the low temperature processing (<100°C) and scalable design. Devices evaluated are diodes, n- and p-type thin film transistors (TFTs), inverters, NAND and NOR gates. The inverters exhibited a DC gain of ≈52 V/V with full rail-to-rail switching. The NAND logic gates switch rail-to-rail with a transition point of V DD/2.
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