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Design of Three Level Silicon Carbide Neutral Point Clamped Inverter.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Design of Three Level Silicon Carbide Neutral Point Clamped Inverter./
作者:	Deshpande, Aditya Anil.
面頁冊數:	1 online resource (90 pages)
附註:	Source: Masters Abstracts International, Volume: 81-05.
Contained By:	Masters Abstracts International81-05.
標題:	Materials science. -
電子資源:	click for full text (PQDT)
ISBN:	9781088389980

Design of Three Level Silicon Carbide Neutral Point Clamped Inverter.
Deshpande, Aditya Anil.

Design of Three Level Silicon Carbide Neutral Point Clamped Inverter. - 1 online resource (90 pages)

Source: Masters Abstracts International, Volume: 81-05.

Thesis (M.S.)--The University of Texas at San Antonio, 2019.

Includes bibliographical references

Power electronics play an important role in electricity utilization from generation to end customers. Application areas like a hybrid vehicle, smart grid systems, aerospace, and AC motor drives will demand high power, high efficiency, and compact converters. Power electronics uses a switching function to implement power conversion circuits. Semiconductor devices like IGBT, MOSFET, IGCT are used for the design of converter. Silicon (Si) is a widely used semiconductor material for these switches. However, Silicon material is reaching its characteristic limitations in high power density applications. New cutting edge wide bandgap semiconductor technology like Silicon carbide (SiC) has shown their better performance characteristics compared to Silicon. With their high-temperature capability and high-frequency operation, SiC power electronics are more reliable. This thesis presents the development of a 10kVA 3-level neutral point clamped inverter using SiC MOSFETs and space vector modulation (SVM). Importance of the SVM technique in achieving low THD is explained and verified with simulation. Hardware prototype is built to verify simulation results with power hardware-in-the-loop developed using OPAL-RT real-time simulator.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9781088389980Subjects--Topical Terms:

557839
Materials science.
Subjects--Index Terms:

Neutral point clampedIndex Terms--Genre/Form:

554714
Electronic books.

Design of Three Level Silicon Carbide Neutral Point Clamped Inverter.
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504 $a Includes bibliographical references
520 $a Power electronics play an important role in electricity utilization from generation to end customers. Application areas like a hybrid vehicle, smart grid systems, aerospace, and AC motor drives will demand high power, high efficiency, and compact converters. Power electronics uses a switching function to implement power conversion circuits. Semiconductor devices like IGBT, MOSFET, IGCT are used for the design of converter. Silicon (Si) is a widely used semiconductor material for these switches. However, Silicon material is reaching its characteristic limitations in high power density applications. New cutting edge wide bandgap semiconductor technology like Silicon carbide (SiC) has shown their better performance characteristics compared to Silicon. With their high-temperature capability and high-frequency operation, SiC power electronics are more reliable. This thesis presents the development of a 10kVA 3-level neutral point clamped inverter using SiC MOSFETs and space vector modulation (SVM). Importance of the SVM technique in achieving low THD is explained and verified with simulation. Hardware prototype is built to verify simulation results with power hardware-in-the-loop developed using OPAL-RT real-time simulator.
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538 $a Mode of access: World Wide Web
650 4 $a Materials science. $3 557839
650 4 $a Electrical engineering. $3 596380
653 $a Neutral point clamped
653 $a Power converter
653 $a Silicon carbide
653 $a Space vector modulation
653 $a Three level inverter
653 $a Power electronics
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