國立虎尾科技大學 |

Developing Oxide Semiconductors and Graphene Field-Effect Transistors for Next-Generation Electronic and Electrochemical Sensing.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Developing Oxide Semiconductors and Graphene Field-Effect Transistors for Next-Generation Electronic and Electrochemical Sensing./
作者:	Lee, Alex Wootae.
面頁冊數:	1 online resource (135 pages)
附註:	Source: Dissertations Abstracts International, Volume: 85-07, Section: B.
Contained By:	Dissertations Abstracts International85-07B.
標題:	Electrical engineering. -
電子資源:	click for full text (PQDT)
ISBN:	9798381408546

Developing Oxide Semiconductors and Graphene Field-Effect Transistors for Next-Generation Electronic and Electrochemical Sensing.
Lee, Alex Wootae.

Developing Oxide Semiconductors and Graphene Field-Effect Transistors for Next-Generation Electronic and Electrochemical Sensing. - 1 online resource (135 pages)

Source: Dissertations Abstracts International, Volume: 85-07, Section: B.

Thesis (Ph.D.)--University of California, San Diego, 2023.

Includes bibliographical references

Since the recent development of Indium-Gallium-Zinc-Oxide (IGZO) thin-film transistor (TFT), oxide semiconductors have received considerable attention and are widely used as a TFT backplane for the state-of-art active-matrix flat panel display. However, the device application of oxide-TFTs is limited to unipolar devices due to the absence of high-performance p-channel oxide TFTs. This limitation poses a significant challenge in advancing oxide device technology, particularly in realizing complementary metal-oxide semiconductor (CMOS) inverter circuits.Tin monoxide (SnO) emerges as a promising oxide semiconductor to develop high-performance p-channel oxide-TFTs due to relatively good hole mobility and low-temperature processability below 300 °C. But their device performances are still largely behind n-channel oxide TFTs (e.g., IGZO, ZnO) because of high-density subgap defects (1020 cm−3) originated from oxygen vacancy (Vo). By incorporating hydrogen annealing after pulse laser deposition (PLD), Vo induced hole traps in SnO were effectively reduced by forming Sn-H bonds, improving TFT mobility to ~1.8 cm2/Vs and Ion/Ioff ratio to ~105. In addition, the subgap defects were further suppressed by adding back-channel passivation layer, allowing SnO-TFTs to exhibit ambipolar behavior by alleviating the fermi-level pinning near valence band (VB) defects.Lead (Pb2+) exposure is a serious health concern that possesses detrimental effects on public health, causing irreversible damage to minors. Both conventional and home kit detection methods face limitations such as high cost or poor reliability and limit of detection (LoD). In addition to studies on oxide semiconductors, I will discuss the label-free graphene field-effect transistor (GFET) based aptamer sensor (aptasensor) specific to Pb2+ sensing. The surface of chemical vapor deposition (CVD) synthesized graphene is functionalized with Pb2+ specific aptamer (Ap), a single-stranded DNA oligonucleotide, serving as a receptor probe binding to linker molecules on graphene. The binding of the target Pb2+ to the Ap is transduced into the modulation of the electrical current through graphene FET. The theoretical LoD of GFET aptasensor is discussed based on thermodynamic prediction of probe - linker - channelsurface binding energies. The surface density of Ap on graphene is optimized by monitoring minimization of capacitance via electrochemical impedance spectroscopy (EIS) to reach uniform Ap distribution, avoiding steric hinderance due to Ap clustering. The record sensor sensitivity was demonstrated with LoD of ~ 7.0 fM, reaching the LoD predicted from the theoretical thermodynamic prediction.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9798381408546Subjects--Topical Terms:

596380
Electrical engineering.
Subjects--Index Terms:

Electrochemical sensorIndex Terms--Genre/Form:

554714
Electronic books.

Developing Oxide Semiconductors and Graphene Field-Effect Transistors for Next-Generation Electronic and Electrochemical Sensing.
LDR:04166ntm a22004097 4500 001 1148328
005 20240924101854.5
006 m o d
007 cr bn ---uuuuu
008 250605s2023 xx obm 000 0 eng d
020 $a 9798381408546
035 $a (MiAaPQ)AAI30691486
035 $a AAI30691486
040 $a MiAaPQ $b eng $c MiAaPQ $d NTU
100 1 $a Lee, Alex Wootae. $3 1474272
245 1 0 $a Developing Oxide Semiconductors and Graphene Field-Effect Transistors for Next-Generation Electronic and Electrochemical Sensing.
264 0 $c 2023
300 $a 1 online resource (135 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 85-07, Section: B.
500 $a Advisor: Bandaru, Prabhakar.
502 $a Thesis (Ph.D.)--University of California, San Diego, 2023.
504 $a Includes bibliographical references
520 $a Since the recent development of Indium-Gallium-Zinc-Oxide (IGZO) thin-film transistor (TFT), oxide semiconductors have received considerable attention and are widely used as a TFT backplane for the state-of-art active-matrix flat panel display. However, the device application of oxide-TFTs is limited to unipolar devices due to the absence of high-performance p-channel oxide TFTs. This limitation poses a significant challenge in advancing oxide device technology, particularly in realizing complementary metal-oxide semiconductor (CMOS) inverter circuits.Tin monoxide (SnO) emerges as a promising oxide semiconductor to develop high-performance p-channel oxide-TFTs due to relatively good hole mobility and low-temperature processability below 300 °C. But their device performances are still largely behind n-channel oxide TFTs (e.g., IGZO, ZnO) because of high-density subgap defects (1020 cm−3) originated from oxygen vacancy (Vo). By incorporating hydrogen annealing after pulse laser deposition (PLD), Vo induced hole traps in SnO were effectively reduced by forming Sn-H bonds, improving TFT mobility to ~1.8 cm2/Vs and Ion/Ioff ratio to ~105. In addition, the subgap defects were further suppressed by adding back-channel passivation layer, allowing SnO-TFTs to exhibit ambipolar behavior by alleviating the fermi-level pinning near valence band (VB) defects.Lead (Pb2+) exposure is a serious health concern that possesses detrimental effects on public health, causing irreversible damage to minors. Both conventional and home kit detection methods face limitations such as high cost or poor reliability and limit of detection (LoD). In addition to studies on oxide semiconductors, I will discuss the label-free graphene field-effect transistor (GFET) based aptamer sensor (aptasensor) specific to Pb2+ sensing. The surface of chemical vapor deposition (CVD) synthesized graphene is functionalized with Pb2+ specific aptamer (Ap), a single-stranded DNA oligonucleotide, serving as a receptor probe binding to linker molecules on graphene. The binding of the target Pb2+ to the Ap is transduced into the modulation of the electrical current through graphene FET. The theoretical LoD of GFET aptasensor is discussed based on thermodynamic prediction of probe - linker - channelsurface binding energies. The surface density of Ap on graphene is optimized by monitoring minimization of capacitance via electrochemical impedance spectroscopy (EIS) to reach uniform Ap distribution, avoiding steric hinderance due to Ap clustering. The record sensor sensitivity was demonstrated with LoD of ~ 7.0 fM, reaching the LoD predicted from the theoretical thermodynamic prediction.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2024
538 $a Mode of access: World Wide Web
650 4 $a Electrical engineering. $3 596380
650 4 $a Materials science. $3 557839
650 4 $a Engineering. $3 561152
653 $a Electrochemical sensor
653 $a Gibbs free energy
653 $a Graphene
653 $a Thin-film transistor
653 $a Semiconductor
653 $a Indium-Gallium-Zinc-Oxide
655 7 $a Electronic books. $2 local $3 554714
690 $a 0794
690 $a 0537
690 $a 0544
710 2 $a University of California, San Diego. $b Materials Science and Engineering. $3 1213914
710 2 $a ProQuest Information and Learning Co. $3 1178819
773 0 $t Dissertations Abstracts International $g 85-07B.
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30691486 $z click for full text (PQDT)