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Negative Differential Resistance in Two-Dimensional Materials Based Vertical Heterostructures.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Negative Differential Resistance in Two-Dimensional Materials Based Vertical Heterostructures./
Author:	Farahani, Athena Shahrabi.
Description:	1 online resource (85 pages)
Notes:	Source: Masters Abstracts International, Volume: 84-02.
Contained By:	Masters Abstracts International84-02.
Subject:	Materials science. -
Online resource:	click for full text (PQDT)
ISBN:	9798837540493

Negative Differential Resistance in Two-Dimensional Materials Based Vertical Heterostructures.
Farahani, Athena Shahrabi.

Negative Differential Resistance in Two-Dimensional Materials Based Vertical Heterostructures. - 1 online resource (85 pages)

Source: Masters Abstracts International, Volume: 84-02.

Thesis (M.S.)--The University of Utah, 2020.

Includes bibliographical references

Moore's law predicted 50 years ago, and held true since then, that the density of transistors should double every two years. However, scaling down Si MOSFETs to less than 7nm, today's dimension, introduce undesirable side effects in the circuit. As SiliconTechnology is reaching its limits, search for Si replacements has started. Newly found family of two-dimensional materials have members with a promising future to replace Si. They are a few atomic planes thick and can be scaled down without degradation of their properties. In this work, we are exploring structures based on two-dimensional materials that could show negative differential resistance. Negative differential resistance is a necessary mechanism in the fabrication of oscillators. Graphene, a few layers of hexagonal boron nitride, tungsten diselenide, hafnium diselenide, and Ga2O3, are studied in this work. Heterostructures based on encapsulation of hexagonal boron nitride between graphene layers can show negative differential resistance based on resonant tunneling between graphene layers. Tungsten diselenide and Hafnium diselenide can form tunnel diodes with negative differential resistance. The theory, fabrication steps, and electrical measurements of each structure are presented and discussed in future chapters. Ideas for future work on these structures are also discussed in the last chapter.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9798837540493Subjects--Topical Terms:

557839
Materials science.
Subjects--Index Terms:

2D FETsIndex Terms--Genre/Form:

554714
Electronic books.

Negative Differential Resistance in Two-Dimensional Materials Based Vertical Heterostructures.
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520 $a Moore's law predicted 50 years ago, and held true since then, that the density of transistors should double every two years. However, scaling down Si MOSFETs to less than 7nm, today's dimension, introduce undesirable side effects in the circuit. As SiliconTechnology is reaching its limits, search for Si replacements has started. Newly found family of two-dimensional materials have members with a promising future to replace Si. They are a few atomic planes thick and can be scaled down without degradation of their properties. In this work, we are exploring structures based on two-dimensional materials that could show negative differential resistance. Negative differential resistance is a necessary mechanism in the fabrication of oscillators. Graphene, a few layers of hexagonal boron nitride, tungsten diselenide, hafnium diselenide, and Ga2O3, are studied in this work. Heterostructures based on encapsulation of hexagonal boron nitride between graphene layers can show negative differential resistance based on resonant tunneling between graphene layers. Tungsten diselenide and Hafnium diselenide can form tunnel diodes with negative differential resistance. The theory, fabrication steps, and electrical measurements of each structure are presented and discussed in future chapters. Ideas for future work on these structures are also discussed in the last chapter.
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