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Photoemission studies of *interface effects on thin film properties.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Photoemission studies of *interface effects on thin film properties./
作者:	Ricci, Dominic A.
面頁冊數:	1 online resource (80 pages)
附註:	Source: Dissertations Abstracts International, Volume: 68-06, Section: B.
Contained By:	Dissertations Abstracts International68-06B.
標題:	Condensation. -
電子資源:	click for full text (PQDT)
ISBN:	9780542775482

Photoemission studies of *interface effects on thin film properties.
Ricci, Dominic A.

Photoemission studies of *interface effects on thin film properties. - 1 online resource (80 pages)

Source: Dissertations Abstracts International, Volume: 68-06, Section: B.

Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.

Includes bibliographical references

As the thickness of a metallic film decreases to the atomic scale, the confinement of the film's electrons by its boundaries gives rise to discrete electronic states, known as quantum well states, which dominate the film properties. This work investigates the use of film-substrate boundary modification as a means to control the film properties through the manipulation of its quantum well states. Specifically, the Schottky barrier heights and thermal stability temperatures for Pb(111) films grown on metal-reconstructed Si(111) substrates are shown to be determined by the interfacial conditions produced by the various Si-terminating metals (Au, Ag, In, and Pb), known as interfactants. These properties are probed experimentally with angle-resolved photoemission spectroscopy using vacuum ultraviolet synchrotron radiation. An analysis of the measured quantum well energy levels and peak widths determines the height of the Schottky barrier, the rectifying energy barrier at a metal-semiconductor junction. A calculation based on the known interface chemistry and the electronegativity yields predicted barrier heights in good agreement with the experiment. These results demonstrate that the Schottky barrier height can be tuned to a desired value through an appropriate selection of interfactant. Extending the exploration of interfactant effects to physical properties, the thermal stability temperatures of Pb films are measured with photoemission. The quantized electronic structure in Pb films causes the thermal stability to oscillate with an approximate bilayer period. A comparison among the systems reveals a phase reversal and an amplitude deviation in the stability temperatures. For Pb/In-[special characters omitted] x [special characters omitted]/Si(111), films made of odd numbers of atomic layers are observed to be more stable than the even ones, but this trend is reversed for the other cases studied. For Pb/Au-6x6/Si(111), the maximum stability temperatures are in excess of room temperature, unlike the other systems. These results show that the temperature-dependent thermal stability behaviors can be controlled by interfacial engineering.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9780542775482Subjects--Topical Terms:

592130
Condensation.
Subjects--Index Terms:

InterfaceIndex Terms--Genre/Form:

554714
Electronic books.

Photoemission studies of *interface effects on thin film properties.
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500 $a Advisor: Chiang, Tai-Chang.
502 $a Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.
504 $a Includes bibliographical references
520 $a As the thickness of a metallic film decreases to the atomic scale, the confinement of the film's electrons by its boundaries gives rise to discrete electronic states, known as quantum well states, which dominate the film properties. This work investigates the use of film-substrate boundary modification as a means to control the film properties through the manipulation of its quantum well states. Specifically, the Schottky barrier heights and thermal stability temperatures for Pb(111) films grown on metal-reconstructed Si(111) substrates are shown to be determined by the interfacial conditions produced by the various Si-terminating metals (Au, Ag, In, and Pb), known as interfactants. These properties are probed experimentally with angle-resolved photoemission spectroscopy using vacuum ultraviolet synchrotron radiation. An analysis of the measured quantum well energy levels and peak widths determines the height of the Schottky barrier, the rectifying energy barrier at a metal-semiconductor junction. A calculation based on the known interface chemistry and the electronegativity yields predicted barrier heights in good agreement with the experiment. These results demonstrate that the Schottky barrier height can be tuned to a desired value through an appropriate selection of interfactant. Extending the exploration of interfactant effects to physical properties, the thermal stability temperatures of Pb films are measured with photoemission. The quantized electronic structure in Pb films causes the thermal stability to oscillate with an approximate bilayer period. A comparison among the systems reveals a phase reversal and an amplitude deviation in the stability temperatures. For Pb/In-[special characters omitted] x [special characters omitted]/Si(111), films made of odd numbers of atomic layers are observed to be more stable than the even ones, but this trend is reversed for the other cases studied. For Pb/Au-6x6/Si(111), the maximum stability temperatures are in excess of room temperature, unlike the other systems. These results show that the temperature-dependent thermal stability behaviors can be controlled by interfacial engineering.
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