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Hafnium Oxide Based Ferroelectric Materials for Memory Applications.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Hafnium Oxide Based Ferroelectric Materials for Memory Applications./
Author:	Yu, Zhouchangwan.
Description:	1 online resource (113 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 84-09, Section: A.
Contained By:	Dissertations Abstracts International84-09A.
Subject:	Crystal structure. -
Online resource:	click for full text (PQDT)
ISBN:	9798374427578

Hafnium Oxide Based Ferroelectric Materials for Memory Applications.
Yu, Zhouchangwan.

Hafnium Oxide Based Ferroelectric Materials for Memory Applications. - 1 online resource (113 pages)

Source: Dissertations Abstracts International, Volume: 84-09, Section: A.

Thesis (Ph.D.)--Stanford University, 2022.

Includes bibliographical references

Innovations of memory technologies are essential for addressing the future needs of data processing and storage. The discovery of ferroelectricity in hafnia (HfO2)-based materials has led the re-emergence of ferroelectric memories in advanced semiconductor technologies, with the potential to reshape the technology landscape and to enable novel computing architectures. Ferroelectric HfO2 is promising for non-volatile memories (NVM) due to its ability to scale down to ultra-thin films and very small device dimensions. However, challenges are still present for implementation of ferroelectric HfO2 in commercial products developed for embedded memories, including limited programming cycle endurance and compatibility with the back-end-of-line (BEOL) processing temperature.This dissertation presents innovations at the material and device levels to realize high endurance and low thermal budget ferroelectric memories, followed by advanced material characterizations to probe the mechanisms behind. First, I will demonstrate an experimental investigation of ferroelectricity in CeO2 doped Hf0.5Zr0.5O2 (HZO) thin films.1 I will present an analysis encompassing measurements of switchable polarization, cycling endurance, stress-induced leakage current (SILC) and photoelectric effects to provide a comprehensive understanding of CeO2 doping effects on the conduction mechanism and reliability of CeO2-doped HZO polarization switching.Second, I will report an investigation of the crystal structure of ferroelectric HZO films as a function of atomic layer deposition (ALD) temperature. Our results suggests that optimization of HZO thin film synthesis defined by the ALD deposition temperature not only produces films with the highest ferroelectric polarization, but can achieve this at the low thermal budgets necessary for incorporation of ferroelectric HZO in BEOL devices.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9798374427578Subjects--Topical Terms:

1372699
Crystal structure.
Index Terms--Genre/Form:

554714
Electronic books.

Hafnium Oxide Based Ferroelectric Materials for Memory Applications.
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502 $a Thesis (Ph.D.)--Stanford University, 2022.
504 $a Includes bibliographical references
520 $a Innovations of memory technologies are essential for addressing the future needs of data processing and storage. The discovery of ferroelectricity in hafnia (HfO2)-based materials has led the re-emergence of ferroelectric memories in advanced semiconductor technologies, with the potential to reshape the technology landscape and to enable novel computing architectures. Ferroelectric HfO2 is promising for non-volatile memories (NVM) due to its ability to scale down to ultra-thin films and very small device dimensions. However, challenges are still present for implementation of ferroelectric HfO2 in commercial products developed for embedded memories, including limited programming cycle endurance and compatibility with the back-end-of-line (BEOL) processing temperature.This dissertation presents innovations at the material and device levels to realize high endurance and low thermal budget ferroelectric memories, followed by advanced material characterizations to probe the mechanisms behind. First, I will demonstrate an experimental investigation of ferroelectricity in CeO2 doped Hf0.5Zr0.5O2 (HZO) thin films.1 I will present an analysis encompassing measurements of switchable polarization, cycling endurance, stress-induced leakage current (SILC) and photoelectric effects to provide a comprehensive understanding of CeO2 doping effects on the conduction mechanism and reliability of CeO2-doped HZO polarization switching.Second, I will report an investigation of the crystal structure of ferroelectric HZO films as a function of atomic layer deposition (ALD) temperature. Our results suggests that optimization of HZO thin film synthesis defined by the ALD deposition temperature not only produces films with the highest ferroelectric polarization, but can achieve this at the low thermal budgets necessary for incorporation of ferroelectric HZO in BEOL devices.
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