國立虎尾科技大學 |

Control and Dispersive Readout of Si/SiGe Quantum Dots Using Atomic Force Microscopy.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Control and Dispersive Readout of Si/SiGe Quantum Dots Using Atomic Force Microscopy./
Author:	Denisov, Artem.
Description:	1 online resource (95 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 84-12, Section: B.
Contained By:	Dissertations Abstracts International84-12B.
Subject:	Physics. -
Online resource:	click for full text (PQDT)
ISBN:	9798379718190

Control and Dispersive Readout of Si/SiGe Quantum Dots Using Atomic Force Microscopy.
Denisov, Artem.

Control and Dispersive Readout of Si/SiGe Quantum Dots Using Atomic Force Microscopy. - 1 online resource (95 pages)

Source: Dissertations Abstracts International, Volume: 84-12, Section: B.

Thesis (Ph.D.)--Princeton University, 2023.

Includes bibliographical references

Silicon has the potential to be a leading platform for hosting a large-scale quantum processor. Recently, milestones achieved in two-qubit gate fidelities and the demonstration of cavity-mediated coupling between spins have strengthened the case for using Si/SiGe heterostructures. The essential part of any spin-qubit operation is spin readout, usually realized through all-electrical spin-to-charge conversion. The search for scalable readout solutions has recently led to the development of the in-situ dispersive technique, where the same gate is used for the formation and readout of the quantum dot. The combination of high-quality accumulation mode Si/SiGe and in-situ readout may make possible a novel scanning gate technique - a movable quantum dot (QD).In traditional gate-defined devices, the QD is induced strictly under the gates and cannot be reconfigured. However, using the tip of an atomic force microscope (AFM) as a movable plunger gate with in-situ readout can break this paradigm. The tip-induced quantum dot can enable experiments like wafer-scale valley spectroscopy and shuttling of the charge and spin in arbitrary directions.This thesis demonstrates the necessary ingredients for creating a movable quantum dot, including coupling the AFM tip to the 2DEG and performing the tip-based in-situ dispersive charge readout. We first performed classic scanning gate microscopy experiments and demonstrated that the tip can drive photon-assisted charge-qubit transitions. To increase the dot-to-tip coupling, we introduced the floating sub-micron gates, which are disconnected from room electronics. The small size of these gates allowed us to study single electron retention of the locked charge, providing insight into interlayer dynamics in overlapping architecture, which was previously inaccessible. Finally, we demonstrated tip-based dispersive charge readout with a signal-to-noise ratio comparable to the conventional state-of-the-art Si devices but without the parasitic background charge accumulation.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9798379718190Subjects--Topical Terms:

564049
Physics.
Subjects--Index Terms:

Charge-lockingIndex Terms--Genre/Form:

554714
Electronic books.

Control and Dispersive Readout of Si/SiGe Quantum Dots Using Atomic Force Microscopy.
LDR:03373ntm a22003857 4500 001 1149531
005 20241022112123.5
006 m o d
007 cr bn ---uuuuu
008 250605s2023 xx obm 000 0 eng d
020 $a 9798379718190
035 $a (MiAaPQ)AAI30492995
035 $a AAI30492995
040 $a MiAaPQ $b eng $c MiAaPQ $d NTU
100 1 $a Denisov, Artem. $3 1475807
245 1 0 $a Control and Dispersive Readout of Si/SiGe Quantum Dots Using Atomic Force Microscopy.
264 0 $c 2023
300 $a 1 online resource (95 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 84-12, Section: B.
500 $a Advisor: Petta, Jason R.
502 $a Thesis (Ph.D.)--Princeton University, 2023.
504 $a Includes bibliographical references
520 $a Silicon has the potential to be a leading platform for hosting a large-scale quantum processor. Recently, milestones achieved in two-qubit gate fidelities and the demonstration of cavity-mediated coupling between spins have strengthened the case for using Si/SiGe heterostructures. The essential part of any spin-qubit operation is spin readout, usually realized through all-electrical spin-to-charge conversion. The search for scalable readout solutions has recently led to the development of the in-situ dispersive technique, where the same gate is used for the formation and readout of the quantum dot. The combination of high-quality accumulation mode Si/SiGe and in-situ readout may make possible a novel scanning gate technique - a movable quantum dot (QD).In traditional gate-defined devices, the QD is induced strictly under the gates and cannot be reconfigured. However, using the tip of an atomic force microscope (AFM) as a movable plunger gate with in-situ readout can break this paradigm. The tip-induced quantum dot can enable experiments like wafer-scale valley spectroscopy and shuttling of the charge and spin in arbitrary directions.This thesis demonstrates the necessary ingredients for creating a movable quantum dot, including coupling the AFM tip to the 2DEG and performing the tip-based in-situ dispersive charge readout. We first performed classic scanning gate microscopy experiments and demonstrated that the tip can drive photon-assisted charge-qubit transitions. To increase the dot-to-tip coupling, we introduced the floating sub-micron gates, which are disconnected from room electronics. The small size of these gates allowed us to study single electron retention of the locked charge, providing insight into interlayer dynamics in overlapping architecture, which was previously inaccessible. Finally, we demonstrated tip-based dispersive charge readout with a signal-to-noise ratio comparable to the conventional state-of-the-art Si devices but without the parasitic background charge accumulation.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2024
538 $a Mode of access: World Wide Web
650 4 $a Physics. $3 564049
650 4 $a Quantum physics. $3 1179090
653 $a Charge-locking
653 $a Reflectometry
653 $a Spin qubits
653 $a Microscopy
653 $a Sub-micron gates
655 7 $a Electronic books. $2 local $3 554714
690 $a 0605
690 $a 0599
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a Princeton University. $b Physics. $3 1475808
773 0 $t Dissertations Abstracts International $g 84-12B.
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30492995 $z click for full text (PQDT)