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Engineering Novel Semiconductors for Advanced Infrared Sensors.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Engineering Novel Semiconductors for Advanced Infrared Sensors./
Author:	Lee, Seokhyeong.
Description:	1 online resource (119 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 85-07, Section: B.
Contained By:	Dissertations Abstracts International85-07B.
Subject:	Engineering. -
Online resource:	click for full text (PQDT)
ISBN:	9798381406924

Engineering Novel Semiconductors for Advanced Infrared Sensors.
Lee, Seokhyeong.

Engineering Novel Semiconductors for Advanced Infrared Sensors. - 1 online resource (119 pages)

Source: Dissertations Abstracts International, Volume: 85-07, Section: B.

Thesis (Ph.D.)--University of Washington, 2023.

Includes bibliographical references

Infrared (IR) technologies have boundless applications spanning from fundamental science, industrial engineering to bio-medical science, climate and environment science. The technology has been developed with quantum physics, solid state physics, and semiconductor engineering, with deeper understanding of interaction between light and matter especially via charged particles (also quasi-particles). Heterogeneous integration of different semiconductor materials adds more functionalities to optoelectronic devices, where properties of optical material can be modulated by engineering the nearby materials. In two-dimensional materials, the effects from perturbation from the near environment can be large enough to change optical properties of the material. In addition, the vertical confinement of two-dimensional material exhibits enhanced light-matter interaction with quantum confinement effect and reduced electron screening, becoming great candidates for optoelectronic devices. Black Phosphorus (bP) is thermodynamically stable two-dimensional material with direct bandgap spanning broad infrared regime. The main two chapters utilize bP for IR active material. First, the optical properties, absorption coefficient can be modulated by electric field and electrostatic doping using Field Effect Transistor (FET) geometry, governed by physical phenomena of Burstein-Moss effect and Quantum Confined Franz Keldysh effect. The modulation of absorption coefficient of bP and its integrability on Silicon chip enables on-chip optical modulator. Second chapter where bP is utilized offers additional functionality, non-volatile programmability by engineering dielectric layer of FET geometry. The non-volatile various values of responsivities of bP IR sensors, when combined in an array, serve as in-sensor computing processor where simple neural network computation is possible in sensor using physical/analog computing, to demonstrate edge detection and hand written digit recognition with 92 % accuracy. Finally, III-V compound semiconductor system is considered and engineered to capture 1-2 μm of broad near-IR photons with exceptional sensitivity and photoelectric gain. Here, heterojunction phototransistor (HPT) is conceived and optimized to not only detect IR light but also drive an LED to extend its application to light-weight Night Vision Intensifier, exhibiting unprecedented IR photon to Red photon upconversion.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9798381406924Subjects--Topical Terms:

561152
Engineering.
Subjects--Index Terms:

Black PhosphorusIndex Terms--Genre/Form:

554714
Electronic books.

Engineering Novel Semiconductors for Advanced Infrared Sensors.
LDR:03824ntm a22004097 4500 001 1149817
005 20241022110521.5
006 m o d
007 cr bn ---uuuuu
008 250605s2023 xx obm 000 0 eng d
020 $a 9798381406924
035 $a (MiAaPQ)AAI30819238
035 $a AAI30819238
040 $a MiAaPQ $b eng $c MiAaPQ $d NTU
100 1 $a Lee, Seokhyeong. $3 1476174
245 1 0 $a Engineering Novel Semiconductors for Advanced Infrared Sensors.
264 0 $c 2023
300 $a 1 online resource (119 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 85-07, Section: B.
500 $a Advisor: Li, Mo.
502 $a Thesis (Ph.D.)--University of Washington, 2023.
504 $a Includes bibliographical references
520 $a Infrared (IR) technologies have boundless applications spanning from fundamental science, industrial engineering to bio-medical science, climate and environment science. The technology has been developed with quantum physics, solid state physics, and semiconductor engineering, with deeper understanding of interaction between light and matter especially via charged particles (also quasi-particles). Heterogeneous integration of different semiconductor materials adds more functionalities to optoelectronic devices, where properties of optical material can be modulated by engineering the nearby materials. In two-dimensional materials, the effects from perturbation from the near environment can be large enough to change optical properties of the material. In addition, the vertical confinement of two-dimensional material exhibits enhanced light-matter interaction with quantum confinement effect and reduced electron screening, becoming great candidates for optoelectronic devices. Black Phosphorus (bP) is thermodynamically stable two-dimensional material with direct bandgap spanning broad infrared regime. The main two chapters utilize bP for IR active material. First, the optical properties, absorption coefficient can be modulated by electric field and electrostatic doping using Field Effect Transistor (FET) geometry, governed by physical phenomena of Burstein-Moss effect and Quantum Confined Franz Keldysh effect. The modulation of absorption coefficient of bP and its integrability on Silicon chip enables on-chip optical modulator. Second chapter where bP is utilized offers additional functionality, non-volatile programmability by engineering dielectric layer of FET geometry. The non-volatile various values of responsivities of bP IR sensors, when combined in an array, serve as in-sensor computing processor where simple neural network computation is possible in sensor using physical/analog computing, to demonstrate edge detection and hand written digit recognition with 92 % accuracy. Finally, III-V compound semiconductor system is considered and engineered to capture 1-2 μm of broad near-IR photons with exceptional sensitivity and photoelectric gain. Here, heterojunction phototransistor (HPT) is conceived and optimized to not only detect IR light but also drive an LED to extend its application to light-weight Night Vision Intensifier, exhibiting unprecedented IR photon to Red photon upconversion.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2024
538 $a Mode of access: World Wide Web
650 4 $a Engineering. $3 561152
650 4 $a Electrical engineering. $3 596380
650 4 $a Materials science. $3 557839
653 $a Black Phosphorus
653 $a Edge computing
653 $a Heterojunction Phototransistor
653 $a Infrared sensor
653 $a Night vision
653 $a Semiconductors
655 7 $a Electronic books. $2 local $3 554714
690 $a 0537
690 $a 0544
690 $a 0794
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a University of Washington. $b Electrical and Computer Engineering. $3 1465511
773 0 $t Dissertations Abstracts International $g 85-07B.
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30819238 $z click for full text (PQDT)