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Molecular Beam Epitaxy of AlGaN Epilayers on Foreign Substrates for Semiconductor Deep Ultraviolet Lasers.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Molecular Beam Epitaxy of AlGaN Epilayers on Foreign Substrates for Semiconductor Deep Ultraviolet Lasers./
Author:	Yin, Xue.
Description:	1 online resource (184 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 85-11, Section: B.
Contained By:	Dissertations Abstracts International85-11B.
Subject:	Load. -
Online resource:	click for full text (PQDT)
ISBN:	9798382615806

Molecular Beam Epitaxy of AlGaN Epilayers on Foreign Substrates for Semiconductor Deep Ultraviolet Lasers.
Yin, Xue.

Molecular Beam Epitaxy of AlGaN Epilayers on Foreign Substrates for Semiconductor Deep Ultraviolet Lasers. - 1 online resource (184 pages)

Source: Dissertations Abstracts International, Volume: 85-11, Section: B.

Thesis (Ph.D.)--McGill University (Canada), 2023.

Includes bibliographical references

Aluminum gallium nitride (AlGaN) ultraviolet (UV) laser diodes (LDs) are of great research interest due to their wide range of applications and promising future to replace today's dominant UV lasing technologies, such as gas lasers and solid-state lasers. Nonetheless, the majority of the studies on AlGaN deep UV lasers are still on optical pumping and the development of electrically driven counterparts is relatively slow, mainly rooted in the difficulties in achieving high quality AlGaN epilayers and insufficient p-type conduction. In addition, the AlGaN UV laser research predominantly relies on the structures grown by metalorganic chemical vapor deposition (MOCVD) and the research of AlGaN UV lasers by molecular beam epitaxy (MBE) is rare. It is also noted that the recent progress on electrically injected AlGaN deep UV lasers relies on expensive AlN substrates.The research in this dissertation follows the track of MBE-grown AlGaN on cost-effective foreign substrates, such as silicon (Si) and sapphire, to address the current impediments. This research first demonstrates a novel buffer layer technology, which enables low-cost, highly reproducible, high quality, and nearly strain-free AlN thin film through exploiting the low Al adatom migration during the coalescence process on a GaN nanowire template on Si. This research further demonstrates high quality AlGaN epilayers on such nanowire-assisted AlN templates by MBE. Peak internal quantum efficiency (IQE) of ~50% is derived, which is significantly improved compared to the previously reported bulk AlGaN epilayers on sapphire.In parallel, the research in this dissertation also, for the first time, reports deep UV lasing from MBE-grown AlGaN on sapphire by optical pumping, with clear lasing evidence. Lasing at 298 nm from the AlGaN/AlN double heterostructure (DH) is first obtained, with a lasing threshold of 950 kW/cm2. This research further studies the correlation between point defects and lasing threshold, reducing the lasing threshold to 530 kW/cm2at 287 nm, together with an increase in IQE of ~16%. Towards the electrically injected AlGaN UV LDs, the research in this dissertation designs and numerically investigates a unique Al-content engineered superlattice electron blocking layer (AESL-EBL), which not only improves charge carrier transport with the assistance of hot hole effects but also minimizes optical loss due to doping.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9798382615806Subjects--Topical Terms:

1437809
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554714
Electronic books.

Molecular Beam Epitaxy of AlGaN Epilayers on Foreign Substrates for Semiconductor Deep Ultraviolet Lasers.
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500 $a Source: Dissertations Abstracts International, Volume: 85-11, Section: B.
500 $a Advisor: Zhao, Songrui.
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504 $a Includes bibliographical references
520 $a Aluminum gallium nitride (AlGaN) ultraviolet (UV) laser diodes (LDs) are of great research interest due to their wide range of applications and promising future to replace today's dominant UV lasing technologies, such as gas lasers and solid-state lasers. Nonetheless, the majority of the studies on AlGaN deep UV lasers are still on optical pumping and the development of electrically driven counterparts is relatively slow, mainly rooted in the difficulties in achieving high quality AlGaN epilayers and insufficient p-type conduction. In addition, the AlGaN UV laser research predominantly relies on the structures grown by metalorganic chemical vapor deposition (MOCVD) and the research of AlGaN UV lasers by molecular beam epitaxy (MBE) is rare. It is also noted that the recent progress on electrically injected AlGaN deep UV lasers relies on expensive AlN substrates.The research in this dissertation follows the track of MBE-grown AlGaN on cost-effective foreign substrates, such as silicon (Si) and sapphire, to address the current impediments. This research first demonstrates a novel buffer layer technology, which enables low-cost, highly reproducible, high quality, and nearly strain-free AlN thin film through exploiting the low Al adatom migration during the coalescence process on a GaN nanowire template on Si. This research further demonstrates high quality AlGaN epilayers on such nanowire-assisted AlN templates by MBE. Peak internal quantum efficiency (IQE) of ~50% is derived, which is significantly improved compared to the previously reported bulk AlGaN epilayers on sapphire.In parallel, the research in this dissertation also, for the first time, reports deep UV lasing from MBE-grown AlGaN on sapphire by optical pumping, with clear lasing evidence. Lasing at 298 nm from the AlGaN/AlN double heterostructure (DH) is first obtained, with a lasing threshold of 950 kW/cm2. This research further studies the correlation between point defects and lasing threshold, reducing the lasing threshold to 530 kW/cm2at 287 nm, together with an increase in IQE of ~16%. Towards the electrically injected AlGaN UV LDs, the research in this dissertation designs and numerically investigates a unique Al-content engineered superlattice electron blocking layer (AESL-EBL), which not only improves charge carrier transport with the assistance of hot hole effects but also minimizes optical loss due to doping.
520 $a Les diodes laser ultraviolets (UV) a base de nitrure d'aluminium-gallium (AlGaN) suscitent un grand interet en recherche en raison de leur large eventail d'applications et de leur avenir prometteur pour remplacer les technologies de laser UV dominantes actuelles, telles que les lasers a gaz et les lasers a solide. Neanmoins, la majorite des etudes sur les lasers UV profonds en AlGaN portent encore sur le pompage optique et le developpement de leurs homologues electriquement pilotes est relativement lent, principalement en raison des difficultes a obtenir des epitaxies AlGaN de haute qualite et de la conduction de type p insuffisante. En outre, la recherche sur les lasers UV en AlGaN repose principalement sur des structures developpees par epitaxie en phase vapeur aux organometalliques (EPVOM) et les travaux sur les lasers UV en AlGaN par epitaxie par jets moleculaires (MBE) sont rares. Il convient egalement de souligner que les avancees recentes des lasers UV profonds a injection electrique en AlGaN sont tous realises sur des substrats en AlN couteux.La recherche dans cette dissertation suit la voie de l'AlGaN developpe par MBE sur des substrats etrangers economiques, tels que silicium (Si) et saphir, pour surmonter les obstacles actuels. Cette recherche demontre d'abord une nouvelle technologie de couche tampon, qui permet d'obtenir un film mince AlN peu couteux, hautement reproductible, de haute qualite et presque exempt de contraintes en exploitant la faible migration des adatomes d'Al lors du processus de coalescence sur un modele de nanofil de GaN sur Si. Cette recherche montre egalement des epitaxies AlGaN de haute qualite sur de tels modeles d'AlN assistes par nanofils grace a l'utilisation de MBE. Une efficacite quantique interne (IQE) maximal d'environ 50% est obtenu, ce qui represente une amelioration significative par rapport aux couches epitaxiales massives d'AlGaN sur saphir precedemment rapportees.En parallele, la recherche dans cette dissertation rapporte egalement, pour la premiere fois, une emission laser UV profonde provenant d'AlGaN developpe par MBE sur saphir par pompage optique, avec des preuves claires d'emission laser. Une emission laser a 298 nm a partir de la double heterostructure (DH) AlGaN/AlN est d'abord obtenue, avec un seuil de d'emission laser de 950 kW/cm². Cette recherche etudie egalement la correlation entre les defauts ponctuels et le seuil d'emission laser, reduisant le seuil a 530 kW/cm² a 287 nm, accompagne d'une augmentation de l'IQE d'environ 16%. En vue de diodes laser UV en AlGaN a injection electrique, la recherche de cette dissertation concoivent et etudient numeriquement une unique couche de blocage d'electrons a super reseau avec composition d'Al ajustee (AESL-EBL), qui ameliore non seulement le transport des porteurs de charge avec l'aide des effets de trous chauds, mais minimise egalement les pertes optiques dues au dopage.
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538 $a Mode of access: World Wide Web
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