國立虎尾科技大學 |

New Methods in Hall Effect Measurement of Low Mobility Materials.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	New Methods in Hall Effect Measurement of Low Mobility Materials./
作者:	Ryan, William L.
面頁冊數:	1 online resource (162 pages)
附註:	Source: Dissertations Abstracts International, Volume: 86-01, Section: B.
Contained By:	Dissertations Abstracts International86-01B.
標題:	Materials science. -
電子資源:	click for full text (PQDT)
ISBN:	9798383198124

New Methods in Hall Effect Measurement of Low Mobility Materials.
Ryan, William L.

New Methods in Hall Effect Measurement of Low Mobility Materials. - 1 online resource (162 pages)

Source: Dissertations Abstracts International, Volume: 86-01, Section: B.

Thesis (Ph.D.)--State University of New York at Binghamton, 2024.

Includes bibliographical references

The Hall effect is essential to basic and applied semiconductor research because it separates the electrical resistance of a sample into charge carrier density n and mobility µ. It is a perpendicular voltage that develops across a conductive sample when subjected to current and an external magnetic field, B. The voltage is proportional to the dimensionless number µB, and thus becomes more difficult to measure as the mobility of the sample decreases. The minimum measurable µB also provides a useful way to compare Hall effect measurement methods. The most common DC Hall effect technique is limited to µB ≥ 2 ∗ 10−4. The standard AC Hall method pushes the limit down to 3.7 ∗ 10−7. This increased sensitivity comes at the cost of long measurement times, up to 10 hours. By incorporating robust complex linear fitting, a zero drift neutralizing current sweep, and a new on-line stationarity test we have extended the AC Hall effect to µB ≈ 8 ∗ 10−8 . Additionally, we have reduced the measurement time to under one hour. Using this new method we have measured the mobility of InSb to be 1.96 ∗ 104 ± 0.05 ∗ 104 cm2/Vs , 4000A sputtered InGaZnO4 as 1.816 ± 0.06cm2/ Vs , 100A thin film Cu as 80 ± 40cm2/Vs at 300K; and reactively sputtered NiO as 2.0 ∗ 10−3 ± 0.5 ∗ 10−3 cm2/Vs at 305K.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9798383198124Subjects--Topical Terms:

557839
Materials science.
Subjects--Index Terms:

Hall effectIndex Terms--Genre/Form:

554714
Electronic books.

New Methods in Hall Effect Measurement of Low Mobility Materials.
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504 $a Includes bibliographical references
520 $a The Hall effect is essential to basic and applied semiconductor research because it separates the electrical resistance of a sample into charge carrier density n and mobility µ. It is a perpendicular voltage that develops across a conductive sample when subjected to current and an external magnetic field, B. The voltage is proportional to the dimensionless number µB, and thus becomes more difficult to measure as the mobility of the sample decreases. The minimum measurable µB also provides a useful way to compare Hall effect measurement methods. The most common DC Hall effect technique is limited to µB ≥ 2 ∗ 10−4. The standard AC Hall method pushes the limit down to 3.7 ∗ 10−7. This increased sensitivity comes at the cost of long measurement times, up to 10 hours. By incorporating robust complex linear fitting, a zero drift neutralizing current sweep, and a new on-line stationarity test we have extended the AC Hall effect to µB ≈ 8 ∗ 10−8 . Additionally, we have reduced the measurement time to under one hour. Using this new method we have measured the mobility of InSb to be 1.96 ∗ 104 ± 0.05 ∗ 104 cm2/Vs , 4000A sputtered InGaZnO4 as 1.816 ± 0.06cm2/ Vs , 100A thin film Cu as 80 ± 40cm2/Vs at 300K; and reactively sputtered NiO as 2.0 ∗ 10−3 ± 0.5 ∗ 10−3 cm2/Vs at 305K.
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538 $a Mode of access: World Wide Web
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653 $a Mobility
653 $a Stationarity
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