國立虎尾科技大學 |

Optimization of Rf Magnetron Sputtering of Cerium-Doped Indium Oxide for Silicon Heterojunction Solar Cells /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Optimization of Rf Magnetron Sputtering of Cerium-Doped Indium Oxide for Silicon Heterojunction Solar Cells // Maria Meireles Ribeiro Magalhaes.
Author:	Magalhaes, Maria Meireles Ribeiro,
Description:	1 electronic resource (62 pages)
Notes:	Source: Masters Abstracts International, Volume: 86-01.
Contained By:	Masters Abstracts International86-01.
Subject:	Optics. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31070963
ISBN:	9798383497258

Optimization of Rf Magnetron Sputtering of Cerium-Doped Indium Oxide for Silicon Heterojunction Solar Cells /
Magalhaes, Maria Meireles Ribeiro,

Optimization of Rf Magnetron Sputtering of Cerium-Doped Indium Oxide for Silicon Heterojunction Solar Cells /Maria Meireles Ribeiro Magalhaes. - 1 electronic resource (62 pages)

Source: Masters Abstracts International, Volume: 86-01.

Optimizing solar cell performance hinges significantly on perfecting the Transparent Conduc- tive Oxide (TCO) layer, a critical component for efficient charge collection and light transmis- sion in the solar cell. Due to their high electron mobilities, TCO materials based on In2O3 appear to be particularly interesting options for solar applications. Indium Tin Oxide (ITO) is one of the most well-known and widely used TCO materials, but its performance is hindered by parasitic free carrier absorption and light reflection, particularly in the near-infrared (NIR) spectrum. To overcome these issues, researchers have turned their focus to other doped-indium oxides. This study will focus on optimizing sputtered Cerium-doped Indium Oxide (ICO) for application in Silicon Heterojunction solar cells (SHJ-SC). ICO's wide bandgap, exceeding 3.6 eV, guarantees that a larger fraction of the solar spectrum reaches the silicon absorber layers. Notably, ICO exhibits remarkable electron mobilities, surpassing 130 cm2/Vs when deposited with a heated substrate. However, due to equipment constraints, all depositions in this study were done at room temperature. To elevate ICO's optoelectrical properties, optimization of deposition pa- rameters, such as oxygen flow, chamber pressure, sputtering power, and water vapor partial pressure, was performed. This optimization yielded films with enhanced mobilities and trans- parency, outperforming conventional laboratory-standard ITO films.For a 35-nm-thick ICO layer, we achieved a mobility of 44.22 cm2/Vs, an average trans- mittance of 85.23% and a resistivity of 8.56x10-4 Ω·cm. With the ICO:H layer, we achieved a mobility of 44.56 cm2/Vs, an average transmittance of 84.77%, and a resistivity of 7.28x10-4 Ω·cm. At the device level, we obtained impressive efficiencies of 23.58% and 23.57% for cells employing ICO and ICO:H, respectively. The former showcased a high Voc of 0.722 V, while the latter achieved a Jsc of 40.53 mA/cm2. These results place ICO as a promising alternative for ITO as TCO in diverse photovoltaic applications.

English

ISBN: 9798383497258Subjects--Topical Terms:

595336
Optics.

Optimization of Rf Magnetron Sputtering of Cerium-Doped Indium Oxide for Silicon Heterojunction Solar Cells /
LDR:03575nam a22004453i 4500 001 1157745
005 20250603111406.5
006 m o d
007 cr|nu||||||||
008 250804s2023 miu||||||m |||||||eng d
020 $a 9798383497258
035 $a (MiAaPQD)AAI31070963
035 $a (MiAaPQD)Portugal10362162023
035 $a AAI31070963
040 $a MiAaPQD $b eng $c MiAaPQD $e rda
100 1 $a Magalhaes, Maria Meireles Ribeiro, $e author. $3 1484009
245 1 0 $a Optimization of Rf Magnetron Sputtering of Cerium-Doped Indium Oxide for Silicon Heterojunction Solar Cells / $c Maria Meireles Ribeiro Magalhaes.
264 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2023
300 $a 1 electronic resource (62 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Masters Abstracts International, Volume: 86-01.
500 $a Advisors: Isabella, Olindo; Mendes, Manuel J.
502 $b M.S. $c Universidade NOVA de Lisboa (Portugal) $d 2023.
520 $a Optimizing solar cell performance hinges significantly on perfecting the Transparent Conduc- tive Oxide (TCO) layer, a critical component for efficient charge collection and light transmis- sion in the solar cell. Due to their high electron mobilities, TCO materials based on In2O3 appear to be particularly interesting options for solar applications. Indium Tin Oxide (ITO) is one of the most well-known and widely used TCO materials, but its performance is hindered by parasitic free carrier absorption and light reflection, particularly in the near-infrared (NIR) spectrum. To overcome these issues, researchers have turned their focus to other doped-indium oxides. This study will focus on optimizing sputtered Cerium-doped Indium Oxide (ICO) for application in Silicon Heterojunction solar cells (SHJ-SC). ICO's wide bandgap, exceeding 3.6 eV, guarantees that a larger fraction of the solar spectrum reaches the silicon absorber layers. Notably, ICO exhibits remarkable electron mobilities, surpassing 130 cm2/Vs when deposited with a heated substrate. However, due to equipment constraints, all depositions in this study were done at room temperature. To elevate ICO's optoelectrical properties, optimization of deposition pa- rameters, such as oxygen flow, chamber pressure, sputtering power, and water vapor partial pressure, was performed. This optimization yielded films with enhanced mobilities and trans- parency, outperforming conventional laboratory-standard ITO films.For a 35-nm-thick ICO layer, we achieved a mobility of 44.22 cm2/Vs, an average trans- mittance of 85.23% and a resistivity of 8.56x10-4 Ω·cm. With the ICO:H layer, we achieved a mobility of 44.56 cm2/Vs, an average transmittance of 84.77%, and a resistivity of 7.28x10-4 Ω·cm. At the device level, we obtained impressive efficiencies of 23.58% and 23.57% for cells employing ICO and ICO:H, respectively. The former showcased a high Voc of 0.722 V, while the latter achieved a Jsc of 40.53 mA/cm2. These results place ICO as a promising alternative for ITO as TCO in diverse photovoltaic applications.
546 $a English
590 $a School code: 7029
650 4 $a Optics. $3 595336
650 4 $a Materials science. $3 557839
650 4 $a Industrial engineering. $3 679492
650 4 $a Condensed matter physics. $3 1148471
650 4 $a Analytical chemistry. $3 1182118
650 4 $a Alternative energy. $3 1241221
650 4 $a Annealing. $3 1153515
650 4 $a Technology. $3 574163
650 4 $a Climate change. $2 bicssc $3 1009004
650 4 $a Research & development--R&D. $3 1372607
650 4 $a Hydrogenation. $3 902568
650 4 $a Alternative energy sources. $3 1372705
650 4 $a Indium. $3 970764
650 4 $a Silicon wafers. $3 1372662
650 4 $a Electric rates. $3 1466223
650 4 $a Conductivity. $3 1384182
650 4 $a Glass substrates. $3 1372457
650 4 $a Temperature effects. $3 1470437
650 4 $a Spectrum analysis. $3 582358
650 4 $a Greenhouse gases. $3 663469
690 $a 0404
690 $a 0363
690 $a 0486
690 $a 0611
690 $a 0546
690 $a 0794
690 $a 0752
710 2 $a Universidade NOVA de Lisboa (Portugal). $3 1466689
720 1 $a Isabella, Olindo $e degree supervisor.
720 1 $a Mendes, Manuel J. $e degree supervisor.
773 0 $t Masters Abstracts International $g 86-01.
790 $a 7029
791 $a M.S.
792 $a 2023
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31070963