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Microstructural and Optical Properties of Sputter-Deposited Ga2O3 Films /
Record Type:
Language materials, printed : Monograph/item
Title/Author:
Microstructural and Optical Properties of Sputter-Deposited Ga2O3 Films // Eduardo Vega Lozada.
Author:
Vega Lozada, Eduardo,
Description:
1 electronic resource (317 pages)
Notes:
Source: Dissertations Abstracts International, Volume: 85-11, Section: B.
Contained By:
Dissertations Abstracts International85-11B.
Subject:
Electrical engineering. -
Online resource:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31340785
ISBN:
9798382603506
Microstructural and Optical Properties of Sputter-Deposited Ga2O3 Films /
Vega Lozada, Eduardo,
Microstructural and Optical Properties of Sputter-Deposited Ga2O3 Films /
Eduardo Vega Lozada. - 1 electronic resource (317 pages)
Source: Dissertations Abstracts International, Volume: 85-11, Section: B.
Semiconductor materials have played a huge role in advancing today's technology through the electronic and photonic devices ushered in over the years. The advancement has been driven in part by society's growing need for electronic devices capable of handling higher power, higher temperature, and higher frequency. Current research efforts are expanding to ultra-wide bandgap semiconductors such as gallium oxide (Ga2O3). The principal goal of this dissertation is to obtain high quality β-Ga2O3 films with controlled conductivity by magnetron sputtering deposition. The specific objectives are the following: To grow β-Ga2O3 films on sapphire substrates (section 5.2) and on native β-Ga2O3 by rf sputtering (section 5.3), to produce doped and undoped β-Ga2O3 films (Section 5.4). Additionally, to grow Lu2O3/ Ga2O3 and B2O3/Ga2O3 alloy films on (2 0 1) UID or Sn-doped Ga2O3 and Al2O3 substrates to tune Ga2O3 original bandgap (Section 5.5). To obtain microstructural, morphological, compositional, and optical data from XRD, AFM, SEM, EDS, and UV-Vis characterization methods for all the experiments mentioned above. From this data, correlate the effects of the varying parameters for the optimization of the films, to use the developed films to fabricate Schottky barrier diodes and proceed with the electrical characterization of the fabricated devices (section 5.6).
English
ISBN: 9798382603506Subjects--Topical Terms:
596380
Electrical engineering.
Subjects--Index Terms:
Ultra-wide bandgap
Microstructural and Optical Properties of Sputter-Deposited Ga2O3 Films /
LDR
:02955nam a22004693i 4500
001
1157836
005
20250603111424.5
006
m o d
007
cr|nu||||||||
008
250804s2024 miu||||||m |||||||eng d
020
$a
9798382603506
035
$a
(MiAaPQD)AAI31340785
035
$a
(MiAaPQD)OhioLINKysu1714233416461085
035
$a
AAI31340785
040
$a
MiAaPQD
$b
eng
$c
MiAaPQD
$e
rda
100
1
$a
Vega Lozada, Eduardo,
$e
author.
$3
1484113
245
1 0
$a
Microstructural and Optical Properties of Sputter-Deposited Ga2O3 Films /
$c
Eduardo Vega Lozada.
264
1
$a
Ann Arbor :
$b
ProQuest Dissertations & Theses,
$c
2024
300
$a
1 electronic resource (317 pages)
336
$a
text
$b
txt
$2
rdacontent
337
$a
computer
$b
c
$2
rdamedia
338
$a
online resource
$b
cr
$2
rdacarrier
500
$a
Source: Dissertations Abstracts International, Volume: 85-11, Section: B.
500
$a
Advisors: Oder, Tom N. Committee members: Linkous, Clovis; Solomon, Constantin; Crescimanno, Michael; Priour, Donald.
502
$b
Ph.D.
$c
Youngstown State University
$d
2024.
520
$a
Semiconductor materials have played a huge role in advancing today's technology through the electronic and photonic devices ushered in over the years. The advancement has been driven in part by society's growing need for electronic devices capable of handling higher power, higher temperature, and higher frequency. Current research efforts are expanding to ultra-wide bandgap semiconductors such as gallium oxide (Ga2O3). The principal goal of this dissertation is to obtain high quality β-Ga2O3 films with controlled conductivity by magnetron sputtering deposition. The specific objectives are the following: To grow β-Ga2O3 films on sapphire substrates (section 5.2) and on native β-Ga2O3 by rf sputtering (section 5.3), to produce doped and undoped β-Ga2O3 films (Section 5.4). Additionally, to grow Lu2O3/ Ga2O3 and B2O3/Ga2O3 alloy films on (2 0 1) UID or Sn-doped Ga2O3 and Al2O3 substrates to tune Ga2O3 original bandgap (Section 5.5). To obtain microstructural, morphological, compositional, and optical data from XRD, AFM, SEM, EDS, and UV-Vis characterization methods for all the experiments mentioned above. From this data, correlate the effects of the varying parameters for the optimization of the films, to use the developed films to fabricate Schottky barrier diodes and proceed with the electrical characterization of the fabricated devices (section 5.6).
546
$a
English
590
$a
School code: 1238
650
4
$a
Electrical engineering.
$3
596380
650
4
$a
Information technology.
$3
559429
650
4
$a
Materials science.
$3
557839
650
4
$a
Optics.
$3
595336
650
4
$a
Physics.
$3
564049
653
$a
Ultra-wide bandgap
653
$a
Gallium oxide
653
$a
Thin films
653
$a
Semiconductor
653
$a
Doping
690
$a
0605
690
$a
0752
690
$a
0794
690
$a
0544
690
$a
0489
710
2
$a
Youngstown State University.
$b
Materials Science.
$e
degree granting institution.
$3
1484114
720
1
$a
Oder, Tom N.
$e
degree supervisor.
773
0
$t
Dissertations Abstracts International
$g
85-11B.
790
$a
1238
791
$a
Ph.D.
792
$a
2024
856
4 0
$u
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31340785
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