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Microstructural and Optical Properties of Sputter-Deposited Ga2O3 Films /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Microstructural and Optical Properties of Sputter-Deposited Ga2O3 Films // Eduardo Vega Lozada.
作者:	Vega Lozada, Eduardo,
面頁冊數:	1 electronic resource (317 pages)
附註:	Source: Dissertations Abstracts International, Volume: 85-11, Section: B.
Contained By:	Dissertations Abstracts International85-11B.
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31340785
ISBN:	9798382603506

Microstructural and Optical Properties of Sputter-Deposited Ga2O3 Films /
Vega Lozada, Eduardo,

Microstructural and Optical Properties of Sputter-Deposited Ga2O3 Films /Eduardo Vega Lozada. - 1 electronic resource (317 pages)

Source: Dissertations Abstracts International, Volume: 85-11, Section: B.

Semiconductor materials have played a huge role in advancing today's technology through the electronic and photonic devices ushered in over the years. The advancement has been driven in part by society's growing need for electronic devices capable of handling higher power, higher temperature, and higher frequency. Current research efforts are expanding to ultra-wide bandgap semiconductors such as gallium oxide (Ga2O3). The principal goal of this dissertation is to obtain high quality β-Ga2O3 films with controlled conductivity by magnetron sputtering deposition. The specific objectives are the following: To grow β-Ga2O3 films on sapphire substrates (section 5.2) and on native β-Ga2O3 by rf sputtering (section 5.3), to produce doped and undoped β-Ga2O3 films (Section 5.4). Additionally, to grow Lu2O3/ Ga2O3 and B2O3/Ga2O3 alloy films on (2 0 1) UID or Sn-doped Ga2O3 and Al2O3 substrates to tune Ga2O3 original bandgap (Section 5.5). To obtain microstructural, morphological, compositional, and optical data from XRD, AFM, SEM, EDS, and UV-Vis characterization methods for all the experiments mentioned above. From this data, correlate the effects of the varying parameters for the optimization of the films, to use the developed films to fabricate Schottky barrier diodes and proceed with the electrical characterization of the fabricated devices (section 5.6).

English

ISBN: 9798382603506Subjects--Topical Terms:

596380
Electrical engineering.
Subjects--Index Terms:

Ultra-wide bandgap

Microstructural and Optical Properties of Sputter-Deposited Ga2O3 Films /
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