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Modeling of AlGaN/GaN high electron mobility transistors

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Modeling of AlGaN/GaN high electron mobility transistors/ edited by D. Nirmal, J. Ajayan.
其他作者:	J., Ajayan.
出版者:	Singapore :Springer Nature Singapore : : 2025.,
面頁冊數:	xii, 261 p. :ill. (some col.), digital ; : 24 cm.;
Contained By:	Springer Nature eBook
標題:	Electronic Materials. -
電子資源:	https://doi.org/10.1007/978-981-97-7506-4
ISBN:	9789819775064

Modeling of AlGaN/GaN high electron mobility transistors
Modeling of AlGaN/GaN high electron mobility transistors[electronic resource] /edited by D. Nirmal, J. Ajayan. - Singapore :Springer Nature Singapore :2025. - xii, 261 p. :ill. (some col.), digital ;24 cm. - Springer tracts in electrical and electronics engineering,2731-4219. - Springer tracts in electrical and electronics engineering..

Compact surface potential based algan/gan hemt models -- Physical Modelling of Charge Trapping Effects -- Recent Developments and Applications of High Electron Mobility Transistors -- Neural network based gan hemt modeling techniques.

This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-based power amplifiers and integrated circuits, among others. The book also covers thermal resistance modeling of GaN HEMTs, charge-based compact models, and surface potential-based models to study the impact of gate leakage current on the RF power performance of GaN HEMTs. This book also deals with the analytical modeling of intrinsic charges and surface potential of GaN HEMTs, physical modeling of charge trapping, neural network-based GaN HEMT models, numerical-based GaN HEMT models, modeling of short channel effects in GaN HEMTs, modeling of parasitic capacitances and resistances, modelingof current collapse and kink effects in HGaN HEMTs, etc. This volume will be a useful to those in industry and academia.

ISBN: 9789819775064

Standard No.: 10.1007/978-981-97-7506-4doiSubjects--Topical Terms:

1389371
Electronic Materials.

LC Class. No.: TK7871.95

Dewey Class. No.: 621.3815284

Modeling of AlGaN/GaN high electron mobility transistors
LDR:02436nam a2200337 a 4500 001 1160462
003 DE-He213
005 20241224115255.0
006 m o d
007 cr nn 008maaau
008 251029s2025 si s 0 eng d
020 $a 9789819775064 $q (electronic bk.)
020 $a 9789819775057 $q (paper)
024 7 $a 10.1007/978-981-97-7506-4 $2 doi
035 $a 978-981-97-7506-4
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.95
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
082 0 4 $a 621.3815284 $2 23
090 $a TK7871.95 $b .M689 2025
245 0 0 $a Modeling of AlGaN/GaN high electron mobility transistors $h [electronic resource] / $c edited by D. Nirmal, J. Ajayan.
260 $a Singapore : $c 2025. $b Springer Nature Singapore : $b Imprint: Springer,
300 $a xii, 261 p. : $b ill. (some col.), digital ; $c 24 cm.
490 1 $a Springer tracts in electrical and electronics engineering, $x 2731-4219
505 0 $a Compact surface potential based algan/gan hemt models -- Physical Modelling of Charge Trapping Effects -- Recent Developments and Applications of High Electron Mobility Transistors -- Neural network based gan hemt modeling techniques.
520 $a This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-based power amplifiers and integrated circuits, among others. The book also covers thermal resistance modeling of GaN HEMTs, charge-based compact models, and surface potential-based models to study the impact of gate leakage current on the RF power performance of GaN HEMTs. This book also deals with the analytical modeling of intrinsic charges and surface potential of GaN HEMTs, physical modeling of charge trapping, neural network-based GaN HEMT models, numerical-based GaN HEMT models, modeling of short channel effects in GaN HEMTs, modeling of parasitic capacitances and resistances, modelingof current collapse and kink effects in HGaN HEMTs, etc. This volume will be a useful to those in industry and academia.
650 2 4 $a Electronic Materials. $3 1389371
650 2 4 $a Electronic Devices. $3 1366460
650 2 4 $a Cyber-Physical Systems. $3 1387591
650 1 4 $a Electronic Circuits and Systems. $3 1366689
650 0 $a Gallium nitride. $3 713641
650 0 $a Modulation-doped field-effect transistors. $3 1293491
700 1 $a J., Ajayan. $3 1487512
700 1 $a D., Nirmal. $3 1487511
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer Nature eBook
830 0 $a Springer tracts in electrical and electronics engineering. $3 1417356
856 4 0 $u https://doi.org/10.1007/978-981-97-7506-4
950 $a Engineering (SpringerNature-11647)