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Cmos plasma and process damage

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Cmos plasma and process damage/ by Kirk Prall.
作者:	Prall, Kirk.
出版者:	Cham :Springer Nature Switzerland : : 2025.,
面頁冊數:	xix, 466 p. :ill. (some col.), digital ; : 24 cm.;
Contained By:	Springer Nature eBook
標題:	Electronic Devices. -
電子資源:	https://doi.org/10.1007/978-3-031-89029-1
ISBN:	9783031890291

Cmos plasma and process damage
Prall, Kirk.

Cmos plasma and process damage[electronic resource] /by Kirk Prall. - Cham :Springer Nature Switzerland :2025. - xix, 466 p. :ill. (some col.), digital ;24 cm.

Chapter 1. BACKGROUND -- Chapter 2. THE ANTENNA EFFECT -- Chapter 3. DIODE AND TRANSISTOR PROTECTION -- Chapter 4. SIGNATURES OF PROCESS DAMAGE -- Chapter 5. ELECTRICAL SIGNATURES OF PROCESS DAMAGE -- Chapter 6. LATENT DAMAGE AND RELIABILITY DEGRADATION -- Chapter 7. ATOMIC-LEVEL DEFECTS AND ELECTRICAL EFFECTS -- Chapter 8. TECHNOLOGY SPECIFIC PROCESS DAMAGE -- Chapter 9. COMMON SOURCES OF PROCESS DAMAGE -- Chapter 10. INLINE PROCESS DAMAGE MEASUREMENTS -- Chapter 11. PROCESS DAMAGE TEST STRUCTURES -- Chapter 12. DESIGN RULES RELATED TO PROCESS DAMAGE -- Chapter 13. PARAMETRIC DAMAGE TESTING STRATEGY AND PROCEDURES -- Chapter 14. THE ROLE OF HYDROGEN -- Chapter 15. METALLIC DEFECTS -- Chapter 16. MOBILE ION CONTAMINATION -- Chapter 17. FIXED CHARGE.

This book discusses the complex technology of building CMOS computer chips and covers some of the unusual problems that can occur during chip manufacturing. Readers will learn how plasma and process damage results from the high-energy processes that are used in chip manufacturing, causing harm to the chips, functional failure and reliability problems. Provides an up-to-date, single-source reference on CMOS plasma and process damage, for engineers from all disciplines Offers concise, comprehensive coverage, discussing real problems with necessary background for working engineers Applies to design, layout, mask making, lithography, process and device engineering, testing and reliability.

ISBN: 9783031890291

Standard No.: 10.1007/978-3-031-89029-1doiSubjects--Topical Terms:

1366460
Electronic Devices.

LC Class. No.: TK7871.99.M44

Dewey Class. No.: 537.6223

Cmos plasma and process damage
LDR:02409nam a2200325 a 4500 001 1162270
003 DE-He213
005 20250516130258.0
006 m d
007 cr nn 008maaau
008 251029s2025 sz s 0 eng d
020 $a 9783031890291 $q (electronic bk.)
020 $a 9783031890284 $q (paper)
024 7 $a 10.1007/978-3-031-89029-1 $2 doi
035 $a 978-3-031-89029-1
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.99.M44
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
082 0 4 $a 537.6223 $2 23
090 $a TK7871.99.M44 $b P898 2025
100 1 $a Prall, Kirk. $3 1489147
245 1 0 $a Cmos plasma and process damage $h [electronic resource] / $c by Kirk Prall.
260 $a Cham : $c 2025. $b Springer Nature Switzerland : $b Imprint: Springer,
300 $a xix, 466 p. : $b ill. (some col.), digital ; $c 24 cm.
505 0 $a Chapter 1. BACKGROUND -- Chapter 2. THE ANTENNA EFFECT -- Chapter 3. DIODE AND TRANSISTOR PROTECTION -- Chapter 4. SIGNATURES OF PROCESS DAMAGE -- Chapter 5. ELECTRICAL SIGNATURES OF PROCESS DAMAGE -- Chapter 6. LATENT DAMAGE AND RELIABILITY DEGRADATION -- Chapter 7. ATOMIC-LEVEL DEFECTS AND ELECTRICAL EFFECTS -- Chapter 8. TECHNOLOGY SPECIFIC PROCESS DAMAGE -- Chapter 9. COMMON SOURCES OF PROCESS DAMAGE -- Chapter 10. INLINE PROCESS DAMAGE MEASUREMENTS -- Chapter 11. PROCESS DAMAGE TEST STRUCTURES -- Chapter 12. DESIGN RULES RELATED TO PROCESS DAMAGE -- Chapter 13. PARAMETRIC DAMAGE TESTING STRATEGY AND PROCEDURES -- Chapter 14. THE ROLE OF HYDROGEN -- Chapter 15. METALLIC DEFECTS -- Chapter 16. MOBILE ION CONTAMINATION -- Chapter 17. FIXED CHARGE.
520 $a This book discusses the complex technology of building CMOS computer chips and covers some of the unusual problems that can occur during chip manufacturing. Readers will learn how plasma and process damage results from the high-energy processes that are used in chip manufacturing, causing harm to the chips, functional failure and reliability problems. Provides an up-to-date, single-source reference on CMOS plasma and process damage, for engineers from all disciplines Offers concise, comprehensive coverage, discussing real problems with necessary background for working engineers Applies to design, layout, mask making, lithography, process and device engineering, testing and reliability.
650 2 4 $a Electronic Devices. $3 1366460
650 2 4 $a Embedded Systems. $3 1026431
650 1 4 $a Electronics Design and Verification. $3 1387809
650 0 $a Plasma devices. $3 1249070
650 0 $a Metal oxide semiconductors, Complementary. $3 596746
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer Nature eBook
856 4 0 $u https://doi.org/10.1007/978-3-031-89029-1
950 $a Engineering (SpringerNature-11647)