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Chemistry and lithography.. Vol. 2,. Chemistry in lithography

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Chemistry and lithography./ Uzodinma Okoroanyanwu.
作者:	Okoroanyanwu, Uzodinma,
面頁冊數:	1 online resource (830 pages) :illustrations. :
標題:	Semiconductors - Etching. -
電子資源:	https://dx.doi.org/10.1117/3.2642420
ISBN:	9781510655584

Chemistry and lithography.. Vol. 2,. Chemistry in lithography
Okoroanyanwu, Uzodinma,

Chemistry and lithography.Vol. 2,Chemistry in lithography [electronic resource] /Uzodinma Okoroanyanwu. - Second edition. - 1 online resource (830 pages) :illustrations. - SPIE Press monograph ;PM353. - SPIE Press monograph ;PM103..

Includes bibliographical references and index.

General Preface to the Second Edition -- Acronyms and Abbreviations -- PART I LITHOGRAPHIC PROCESS CHEMISTRY -- 1 Overview of Chemistry in Lithography -- 2 The Semiconductor Lithographic Process Chemistry -- Part II LITHOGRAPHIC MATERIALS CHEMISTRY -- 3 Chemistry of the Lithographic Exposure Tool and Optical Element Materials -- 4 Chemistry of Lithographic Patterning Materials -- PART III LITHOGRAPHIC PHOTOCHEMISTRY AND RADIATION CHEMISTRY -- 5 Photochemistry and Radiation Chemistry in Lithography -- PART IV CHEMISTRY OF LITHOGRAPHIC IMAGING MECHANISMS -- 6 Chemistry of Photochemical and Radiochemical Imaging Mechanisms of Negative-Tone Resists -- 7 Chemistry of Photochemical and Radiochemical Imaging Mechanisms of Positive-Tone Resists -- 8 Chemistry of the Limiting Issues of Photochemical and Radiochemical Resists and Approaches to Their Solutions -- 9 Chemistry of Self-Assembling Lithographic Imaging Mechanisms -- 10 Chemistry of Imprint Lithographic Imaging Mechanisms -- PART V LITHOGRAPHIC-PROCESS-INDUCED CHEMISTRY -- 11 Lithographic Electrochemistry -- 12 Lithographic Colloidal Chemistry -- Index

Restricted to subscribers or individual electronic text purchasers.

"This book is the second in a series of three volumes that make up the second edition of Chemistry and Lithography (2010). This volume explores the chemical basis of lithography, with the goal of deconstructing lithography into its essential chemical principles and to situate its various aspects in specific fields of chemistry. It is organized in five parts, comprising: lithographic process chemistry, lithographic materials chemistry, lithographic photo- and radiation chemistry, chemistry of lithographic imaging mechanisms, and lithographic process-induced chemistry. With the successful implementation of EUV lithography in manufacturing at the 10-nm and 7-nm technology nodes, patterning challenges have shifted from resolution to mostly noise and sensitivity. This is a regime where the resist suffers from increased stochastic variation and the attendant effects of shot noise-a consequence of the discrete nature of photons, which, at very low number per exposure pixel, show increased variability in the response of the resist relative to its mean. Noise in this instance is the natural variation in lithographic pattern placement, shape, and size. It causes line edge roughness, line width variation, and stochastic defects. Ultimately, these patterning issues have their origin in the materials used in lithography. Chemistry underpins the essence, functions, and properties of these materials. We therefore examine in the second volume of the present edition the role of stochastics in EUV lithography in far greater detail than we did in the first edition. Equally significant, the book develops a chemistry and lithography interaction matrix, which is used as a device to explore how various aspects and practices of photolithography (or optical lithography), electron-beam lithography, ion-beam lithography, EUV lithography, imprint lithography, directed self-assembly lithography, and proximal probe lithography derive from established chemical principles and phenomena."--

Mode of access: World Wide Web.

ISBN: 9781510655584

Standard No.: 10.1117/3.2642420doiSubjects--Topical Terms:

877240
Semiconductors
--Etching.Index Terms--Genre/Form:

554714
Electronic books.

LC Class. No.: TP156.E68 / O44 2023eb

Dewey Class. No.: 686.2/315

Chemistry and lithography.. Vol. 2,. Chemistry in lithography
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300 $a 1 online resource (830 pages) : $b illustrations.
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504 $a Includes bibliographical references and index.
505 0 # $a General Preface to the Second Edition -- Acronyms and Abbreviations -- PART I LITHOGRAPHIC PROCESS CHEMISTRY -- 1 Overview of Chemistry in Lithography -- 2 The Semiconductor Lithographic Process Chemistry -- Part II LITHOGRAPHIC MATERIALS CHEMISTRY -- 3 Chemistry of the Lithographic Exposure Tool and Optical Element Materials -- 4 Chemistry of Lithographic Patterning Materials -- PART III LITHOGRAPHIC PHOTOCHEMISTRY AND RADIATION CHEMISTRY -- 5 Photochemistry and Radiation Chemistry in Lithography -- PART IV CHEMISTRY OF LITHOGRAPHIC IMAGING MECHANISMS -- 6 Chemistry of Photochemical and Radiochemical Imaging Mechanisms of Negative-Tone Resists -- 7 Chemistry of Photochemical and Radiochemical Imaging Mechanisms of Positive-Tone Resists -- 8 Chemistry of the Limiting Issues of Photochemical and Radiochemical Resists and Approaches to Their Solutions -- 9 Chemistry of Self-Assembling Lithographic Imaging Mechanisms -- 10 Chemistry of Imprint Lithographic Imaging Mechanisms -- PART V LITHOGRAPHIC-PROCESS-INDUCED CHEMISTRY -- 11 Lithographic Electrochemistry -- 12 Lithographic Colloidal Chemistry -- Index
506 # $a Restricted to subscribers or individual electronic text purchasers.
520 # $a "This book is the second in a series of three volumes that make up the second edition of Chemistry and Lithography (2010). This volume explores the chemical basis of lithography, with the goal of deconstructing lithography into its essential chemical principles and to situate its various aspects in specific fields of chemistry. It is organized in five parts, comprising: lithographic process chemistry, lithographic materials chemistry, lithographic photo- and radiation chemistry, chemistry of lithographic imaging mechanisms, and lithographic process-induced chemistry. With the successful implementation of EUV lithography in manufacturing at the 10-nm and 7-nm technology nodes, patterning challenges have shifted from resolution to mostly noise and sensitivity. This is a regime where the resist suffers from increased stochastic variation and the attendant effects of shot noise-a consequence of the discrete nature of photons, which, at very low number per exposure pixel, show increased variability in the response of the resist relative to its mean. Noise in this instance is the natural variation in lithographic pattern placement, shape, and size. It causes line edge roughness, line width variation, and stochastic defects. Ultimately, these patterning issues have their origin in the materials used in lithography. Chemistry underpins the essence, functions, and properties of these materials. We therefore examine in the second volume of the present edition the role of stochastics in EUV lithography in far greater detail than we did in the first edition. Equally significant, the book develops a chemistry and lithography interaction matrix, which is used as a device to explore how various aspects and practices of photolithography (or optical lithography), electron-beam lithography, ion-beam lithography, EUV lithography, imprint lithography, directed self-assembly lithography, and proximal probe lithography derive from established chemical principles and phenomena."-- $c Provided by publisher.
530 $a Also published in print version.
538 $a Mode of access: World Wide Web.
538 $a System requirements: Adobe Acrobat Reader.
588 $a Title from PDF title page (SPIE eBooks Website, viewed 2023-09-15)
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