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Synthesis and Characterization of Tin (Sn) Incorporated GA2O3

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Synthesis and Characterization of Tin (Sn) Incorporated GA2O3/ Guillermo N Serrano.
作者:	Serrano, Guillermo N.,
面頁冊數:	1 electronic resource (72 pages)
附註:	Source: Masters Abstracts International, Volume: 83-07.
Contained By:	Masters Abstracts International83-07.
標題:	Materials science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28775575
ISBN:	9798762112857

Synthesis and Characterization of Tin (Sn) Incorporated GA2O3
Serrano, Guillermo N.,

Synthesis and Characterization of Tin (Sn) Incorporated GA2O3 [electronic resource] /Guillermo N Serrano. - 1 electronic resource (72 pages)

Source: Masters Abstracts International, Volume: 83-07.

In this work, we report on the synthesis, characterization of tin (Sn) incorporated gallium oxide Ga2O3 compounds, also included in this work is the effect of tin concentration related to the optical and electrochemical properties. The Sn incorporation into Ga2O3 creates a significant reduction in the bandgap and causes a nonlinear optical activity as the concentration varies. Substantial investigation performed to the structure, phase, and morphology of the mixed compounds governed by the stoichiometry equation Ga2−2xSnxO3-ɗ indicates that the Sn incorporation from 0.00 ≤x≤ 0.30 has a significant effect on these properties. To synthesize the Ga-Sn-O compounds a solid-state reaction method was employed to incorporate purity-high SnO2 and Ga2O3 powders, this method involved calcination and sintering at high temperature for 12 hrs. X-ray diffraction characterization analyses suggest a solid solution at Sn concentrationx≤ 0.10 and a possible solubility limit atx≤ 0.15. Scanning electron microscopy (SEM) performed to complement the surface morphology analysis also demonstrated a relationship between Sn phase separation and concentration. This separate phase created by Sn introduction induces a reduction in bandgap while also showcasing nonlinear optical activity that traditionally is not present. This works also examines the variable temperature during synthesis effect on characterization and optical properties and suggests a higher solubility limit for Sn introduction. The more in-depth knowledge of structure, optical, and chemical properties as well as the importance of synthetic conditions, could be promising for the optimization of Ga-Sn-O compounds for optical, optoelectronic, and photonic device applications.

Spanish

ISBN: 9798762112857Subjects--Topical Terms:

557839
Materials science.
Subjects--Index Terms:

Tin (Sn)

Synthesis and Characterization of Tin (Sn) Incorporated GA2O3
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520 # $a In this work, we report on the synthesis, characterization of tin (Sn) incorporated gallium oxide Ga2O3 compounds, also included in this work is the effect of tin concentration related to the optical and electrochemical properties. The Sn incorporation into Ga2O3 creates a significant reduction in the bandgap and causes a nonlinear optical activity as the concentration varies. Substantial investigation performed to the structure, phase, and morphology of the mixed compounds governed by the stoichiometry equation Ga2−2xSnxO3-ɗ indicates that the Sn incorporation from 0.00 ≤x≤ 0.30 has a significant effect on these properties. To synthesize the Ga-Sn-O compounds a solid-state reaction method was employed to incorporate purity-high SnO2 and Ga2O3 powders, this method involved calcination and sintering at high temperature for 12 hrs. X-ray diffraction characterization analyses suggest a solid solution at Sn concentrationx≤ 0.10 and a possible solubility limit atx≤ 0.15. Scanning electron microscopy (SEM) performed to complement the surface morphology analysis also demonstrated a relationship between Sn phase separation and concentration. This separate phase created by Sn introduction induces a reduction in bandgap while also showcasing nonlinear optical activity that traditionally is not present. This works also examines the variable temperature during synthesis effect on characterization and optical properties and suggests a higher solubility limit for Sn introduction. The more in-depth knowledge of structure, optical, and chemical properties as well as the importance of synthetic conditions, could be promising for the optimization of Ga-Sn-O compounds for optical, optoelectronic, and photonic device applications.
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