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Post-CMP Cleaning Solutions for Removing Ceria Particles and Cobalt-Benzotriazole Complexes from Various Film Surfaces

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Post-CMP Cleaning Solutions for Removing Ceria Particles and Cobalt-Benzotriazole Complexes from Various Film Surfaces/ Sri Siva Rama Krishna Hanup Vegi.
作者:	Vegi, Sri Siva Rama Krishna Hanup,
面頁冊數:	1 electronic resource (136 pages)
附註:	Source: Dissertations Abstracts International, Volume: 84-04, Section: B.
Contained By:	Dissertations Abstracts International84-04B.
標題:	Chemical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29327210
ISBN:	9798351431062

Post-CMP Cleaning Solutions for Removing Ceria Particles and Cobalt-Benzotriazole Complexes from Various Film Surfaces
Vegi, Sri Siva Rama Krishna Hanup,

Post-CMP Cleaning Solutions for Removing Ceria Particles and Cobalt-Benzotriazole Complexes from Various Film Surfaces [electronic resource] /Sri Siva Rama Krishna Hanup Vegi. - 1 electronic resource (136 pages)

Source: Dissertations Abstracts International, Volume: 84-04, Section: B.

With device dimensions shrinking down to few nanometers and below for the sub-10nm technology nodes, there is a 'ZERO' tolerance towards all types of defects that are present on the wafer surface post CMP process. Thus, post-CMP cleaning is a pivotal process in improving the chip yield and reliability.Currently, one of the prime challenges that the semiconductor industry faces is to remove the small sized particles(20-30nm) and produce defect free wafers (almost '0') during high volume manufacturing (HVM). This research focused on the development of different post-CMP cleaning solutions for the removal of • ceria particles (davg = 10nm and 30nm) from silicon dioxide and silicon nitride film surfaces applicable in shallow trench isolation (STI) application, and• cobalt-benzotriazole (Co-BTA) complexes from cobalt, titanium nitride, silicon nitride and silicon dioxide film surfaces applicable in advanced interconnect applications.Cleaning results in the ceria cleaning study were obtained using a lab scale polyvinyl acetal (PVA) brush nodule scrubbing setup that mimics the brush scrubbing cleaning method followed in the industry.The developed post-CMP cleaning solutions consisted of the chemical reagents that promoted chemical bond breakage present between ceria particles and the film surfaces and prevented them from redeposition on the film surfaces. The cleaning performance was evaluated using AFM and SEM imaging. BTA and Co-BTA complexes are hydrophobic in nature, hence their removal is a challenge with the aqueous based cleaning solutions. The proposed cleaning solutions focused on the ligand exchange mechanism: a new cleaning strategy based on the stability constants of the Co complexes with the chelating agents. Environmentally benign aliphatic amines were identified as chelating agents in the cleaning solutions for the removal of Co-BTA without compromising on the films surface quality after cleaning.

English

ISBN: 9798351431062Subjects--Topical Terms:

555952
Chemical engineering.
Subjects--Index Terms:

Ceria

Post-CMP Cleaning Solutions for Removing Ceria Particles and Cobalt-Benzotriazole Complexes from Various Film Surfaces
LDR:03523nam a22004213i 4500 001 1172856
005 20260622113217.5
006 m o d
007 cr|nu||||||||
008 260803s2022 miu||||||m |||||||eng d
020 $a 9798351431062
035 $a (MiAaPQD)AAI29327210
035 $a AAI29327210
040 $a MiAaPQD $b eng $c MiAaPQD $e rda
100 1 $a Vegi, Sri Siva Rama Krishna Hanup, $e author. $3 1503469
245 1 0 $a Post-CMP Cleaning Solutions for Removing Ceria Particles and Cobalt-Benzotriazole Complexes from Various Film Surfaces $c Sri Siva Rama Krishna Hanup Vegi. $h [electronic resource] /
264 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2022
300 $a 1 electronic resource (136 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 84-04, Section: B.
500 $a Advisors: Babu, Suryadevara Committee members: Krishnan, Sitaraman; Shipp, Devon; Andreescu, Silvana; Seo, Jihoon; Yang, Ji Chul.
502 $b Ph.D. $c Clarkson University $d 2022.
520 # $a With device dimensions shrinking down to few nanometers and below for the sub-10nm technology nodes, there is a 'ZERO' tolerance towards all types of defects that are present on the wafer surface post CMP process. Thus, post-CMP cleaning is a pivotal process in improving the chip yield and reliability.Currently, one of the prime challenges that the semiconductor industry faces is to remove the small sized particles(20-30nm) and produce defect free wafers (almost '0') during high volume manufacturing (HVM). This research focused on the development of different post-CMP cleaning solutions for the removal of • ceria particles (davg = 10nm and 30nm) from silicon dioxide and silicon nitride film surfaces applicable in shallow trench isolation (STI) application, and• cobalt-benzotriazole (Co-BTA) complexes from cobalt, titanium nitride, silicon nitride and silicon dioxide film surfaces applicable in advanced interconnect applications.Cleaning results in the ceria cleaning study were obtained using a lab scale polyvinyl acetal (PVA) brush nodule scrubbing setup that mimics the brush scrubbing cleaning method followed in the industry.The developed post-CMP cleaning solutions consisted of the chemical reagents that promoted chemical bond breakage present between ceria particles and the film surfaces and prevented them from redeposition on the film surfaces. The cleaning performance was evaluated using AFM and SEM imaging. BTA and Co-BTA complexes are hydrophobic in nature, hence their removal is a challenge with the aqueous based cleaning solutions. The proposed cleaning solutions focused on the ligand exchange mechanism: a new cleaning strategy based on the stability constants of the Co complexes with the chelating agents. Environmentally benign aliphatic amines were identified as chelating agents in the cleaning solutions for the removal of Co-BTA without compromising on the films surface quality after cleaning.
546 $a English
590 $a School code: 0049
650 # 4 $a Chemical engineering. $3 555952
653 # # $a Ceria
653 # # $a Chelating agent
653 # # $a Chemical mechanical planarization
653 # # $a Cobalt-BTA
653 # # $a Post-CMP cleaning
653 # # $a PVA brush
690 $a 0542
710 2 # $a Clarkson University. $b Chemical Engineering. $e degree granting institution. $3 1503470
720 1 $a Babu, Suryadevara $e degree supervisor.
773 0 # $t Dissertations Abstracts International $g 84-04B.
790 $a 0049
791 $a Ph.D.
792 $a 2022
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29327210