國立虎尾科技大學 |

Оптимізація характеристик наночастинок та плівок ZnO:In, Zn₂SnO₄, Cu₂MgₓZn₁₋ₓSnS₄ для формування функціональних шарів електронних приладів = Optimization of the Characteristics of Nanoparticles and Films of ZnO:In, Zn₂SnO₄, Cu₂MgₓZn₁₋ₓSnS₄ for the Formation of Functional Layers in Electronic Devices /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Оптимізація характеристик наночастинок та плівок ZnO:In, Zn₂SnO₄, Cu₂MgₓZn₁₋ₓSnS₄ для формування функціональних шарів електронних приладів/ Maksym Yermakov.
Reminder of title:	Optimization of the Characteristics of Nanoparticles and Films of ZnO:In, Zn₂SnO₄, Cu₂MgₓZn₁₋ₓSnS₄ for the Formation of Functional Layers in Electronic Devices /
Author:	Yermakov, Maksym,
Description:	1 electronic resource (191 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 87-05, Section: B.
Contained By:	Dissertations Abstracts International87-05B.
Subject:	Electrical engineering. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=32395030
ISBN:	9798265441263

Оптимізація характеристик наночастинок та плівок ZnO:In, Zn₂SnO₄, Cu₂MgₓZn₁₋ₓSnS₄ для формування функціональних шарів електронних приладів = Optimization of the Characteristics of Nanoparticles and Films of ZnO:In, Zn₂SnO₄, Cu₂MgₓZn₁₋ₓSnS₄ for the Formation of Functional Layers in Electronic Devices /
Yermakov, Maksym,

Оптимізація характеристик наночастинок та плівок ZnO:In, Zn₂SnO₄, Cu₂MgₓZn₁₋ₓSnS₄ для формування функціональних шарів електронних приладівOptimization of the Characteristics of Nanoparticles and Films of ZnO:In, Zn₂SnO₄, Cu₂MgₓZn₁₋ₓSnS₄ for the Formation of Functional Layers in Electronic Devices / [eletronic resource] =Maksym Yermakov. - 1 electronic resource (191 pages)

Source: Dissertations Abstracts International, Volume: 87-05, Section: B.

The dissertation is dedicated to the development of materials science aspects related to the control of structure-dependent characteristics of nanoparticles and thin films of functional materials, specifically oxide and kesterite compounds - ZnO:In, Zn2SnO4, Cu2MgxZn1-xSnS4 - synthesized via nanoparticle ink spraying and pulsed spray pyrolysis methods. These materials were obtained using advanced low-temperature techniques. Particular attention was paid to the modification of material properties through doping, compositional control, and thermal treatment. During the study, prototype device structures based on the ITO/ZnO:In/ZnO/NiO heterostructure were also developed. Such structures demonstrate potential for applications in solar energy, photosensitive devices (photodetectors), and gas-sensitive sensors. The results of this dissertation contribute to the improvement of deposition technologies for oxide and kesterite compound films, deepen the understanding of structure-function relationships in nanomaterials, and expand the range of possible applications of these materials in modern electronic devices and components.To achieve the research objectives, laboratory synthesis methods for promising semiconductor nanomaterials, namely ZnO:In, Zn2SnO4, and Cu2MgxZn1-xSnS4, were developed at the initial stage. The colloidal polyol method was employed as the primary approach for nanoparticle synthesis, enabling control over particle size, morphology, and composition. Concurrently, preparation protocols for molecular precursor solutions were established, serving as the basis for formulating nanoparticle inks with optimized rheological properties. At the subsequent stage, nanoparticle inks adapted for vacuum-free deposition of thin films were produced based on the synthesized nanoparticles and molecular solutions. Spray and pulsed spray pyrolysis techniques were chosen as the main deposition methods, allowing the formation of uniform layers with high reproducibility and controlled thickness.To enhance the accuracy and stability of deposition, as well as to automate the process, a specialized laboratory thin-film deposition system was designed. This system implements a controlled process for forming thin semiconductor compound layers, providing flexible adjustment of deposition parameters such as substrate temperature, pressure, and spray solution feed frequency. Moreover, the system design and operating principles are scalable, offering prospects for adaptation to small-scale or even industrial production of nanostructured materials and devices based on them.A comprehensive study was conducted on the morphological, structural, optical, and electrical characteristics, as well as the chemical composition of NPs and thin films of IZO, Zn2SnO4, and Cu2MgxZn1-xSnS4 compounds, depending on the physicochemical and technological conditions of their synthesis. In particular, the influence of synthesis methods, dopant concentration, and annealing temperature was analyzed. This allowed for a deeper understanding of how various technological parameters affect the material properties, contributing to the optimization of fabrication processes. Such an approach ensures stability and reproducibility of material properties, which is crucial for their further application in optoelectronic devices, sensors, and electronic equipment.ZnO NPs doped with In (0-10 at.%) were synthesized using the polyol-colloidal method. The effect of doping on their chemical composition, morphology, structural, and substructural characteristics was studied. It was established that at In concentrations up to 2 at.%, the particles exhibit a single-phase structure containing only zinc oxide with a wurtzite structure. With a further increase in dopant concentration, secondary phases such as In2O3 and InOOH emerge. The lattice parameter a increases from 0.32967 nm to 0.33194 nm upon In incorporation, whereas the c parameter decreases from 0.52029 nm to 0.51896 nm. An increase in dopant concentration in the precursor from 0 to 10 at.% led to a corresponding rise in In content in NPs from 0 to 6.42 at.% and an increase in nanoparticle size from 15 to 24 nm.The effect of indium doping on the structural, substructural, optical, and electrical characteristics of ZnO films deposited by the spray pyrolysis method was investigated. The samples were synthesized using molecular solutions with an indium-to-zinc atomic ratio of 1, 3, 5, 7, and 10 at.%. Structural analysis confirmed that the films exhibit a hexagonal structure with a [110] growth texture, whose quality deteriorates with increasing doping levels. The study indicates the effective incorporation of indium atoms into the crystalline lattice of zinc oxide. This doping process leads to an increase in the band gap of the compound. The best electrical characteristics of IZO films (n = 3.4 × 1018 cm-3, ρ = 0.007 Ω·cm2, μ = 253 cm2/V·s) were achieved when using a precursor with a dopant concentration of 3 at.%, which is likely due to the superior structural quality of these films.A study was conducted on the structural, substructural, and optical characteristics of Zn2SnO4 NPs and thin films. The NPs were synthesized using the hydrothermal method for durations ranging from 16 to 32 hours, with 4-hour intervals. Based on particles with optimal parameters (28 hours), nanoparticle inks were formulated and subsequently sprayed to obtain oxide films. To optimize the structural characteristics, the deposited films were annealed in an argon atmosphere at temperatures of 523-773 K for 30 minutes. Scanning electron microscopy analysis revealed that the films, with a thickness of d = (4.90-8.45) μm and an inverse spinel structure, consisted of nanocrystals ranging in size from 27.8 to 36.0 nm, depending on the annealing temperature, and exhibited a [220] growth texture. The size of the coherent scattering regions in the films increased with higher annealing temperatures, from (3.85-5.56) nm at 523 K to (6.44-7.99) nm at 773 K. X-ray diffraction results were corroborated by Raman spectroscopy data, where the observed modes F2g(2), F2g(3) and A1g corresponded to the inverse spinel structure of Zn2SnO4. It was determined that increasing the annealing temperature led to a change in the optical bandgap of the films from 4.04 to 3.63 eV.For the first time, thin films of Cu2MgxZn1-xSnS4 solid solutions were obtained using the pulsed spray pyrolysis method. The effect of the Mg/Zn ratio in the precursor (0 ≤ y ≤ 0.5) on the structural, substructural, optical characteristics, and chemical composition of Cu2MgxZn1-xSnS4 thin films was investigated. X-ray diffraction analysis confirmed the formation of single-phase films with a kesterite structure. The single-phase nature was also supported by Raman spectroscopy results for samples obtained at y ≤ 0.3. Chemical analysis of the films confirmed the successful incorporation of magnesium into the thin layers at levels of (5.5-6.7) at.%. Increasing the overall magnesium content had little effect on the concentration of all other elements except zinc. The layers obtained at y = 0.1 exhibited the lowest overall dislocation density (ρ = 0.73 × 10¹⁷ lines/m²). Thus, substituting zinc with magnesium improved the quality of the solid solution at concentrations y < 0.3. It was established that the band gap of the undoped compound was 1.47 eV, while for doped samples, it decreased from 1.28 eV (y = 0.1) to 1.22 eV (y = 0.5). Therefore, the Cu2MgxZn1-xSnS4 solid solution is a promising and cost-effective material for the development of absorber layers in third-generation solar cells.The dependence of the structural, substructural, optical, and electrical characteristics of the ITO/ZnO:In/ZnO/NiO heterostructure on vacuum annealing in the temperature range of 573-773 K was established. The heterostructures were entirely fabricated using the spray pyrolysis method. X-ray diffraction analysis confirmed the presence of only the hexagonal ZnO phase and the cubic NiO phase in the studied samples, which was further validated by Raman spectroscopy. For the n-ZnO/p-NiO heterostructure annealed at 723 K, dark current-voltage characteristics (I-V curves) were measured at different temperatures.

Ukrainian

ISBN: 9798265441263Subjects--Topical Terms:

596380
Electrical engineering.
Subjects--Index Terms:

Nanoparticles

Оптимізація характеристик наночастинок та плівок ZnO:In, Zn₂SnO₄, Cu₂MgₓZn₁₋ₓSnS₄ для формування функціональних шарів електронних приладів = Optimization of the Characteristics of Nanoparticles and Films of ZnO:In, Zn₂SnO₄, Cu₂MgₓZn₁₋ₓSnS₄ for the Formation of Functional Layers in Electronic Devices /
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245 1 0 $a Оптимізація характеристик наночастинок та плівок ZnO:In, Zn₂SnO₄, Cu₂MgₓZn₁₋ₓSnS₄ для формування функціональних шарів електронних приладів $b Optimization of the Characteristics of Nanoparticles and Films of ZnO:In, Zn₂SnO₄, Cu₂MgₓZn₁₋ₓSnS₄ for the Formation of Functional Layers in Electronic Devices / $c Maksym Yermakov. $h [eletronic resource] =
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500 $a Source: Dissertations Abstracts International, Volume: 87-05, Section: B.
500 $a Advisors: Opanasyuk, Anatoliy.
502 $b Ph.D. $c Sumy State University $d 2025.
520 # $a The dissertation is dedicated to the development of materials science aspects related to the control of structure-dependent characteristics of nanoparticles and thin films of functional materials, specifically oxide and kesterite compounds - ZnO:In, Zn2SnO4, Cu2MgxZn1-xSnS4 - synthesized via nanoparticle ink spraying and pulsed spray pyrolysis methods. These materials were obtained using advanced low-temperature techniques. Particular attention was paid to the modification of material properties through doping, compositional control, and thermal treatment. During the study, prototype device structures based on the ITO/ZnO:In/ZnO/NiO heterostructure were also developed. Such structures demonstrate potential for applications in solar energy, photosensitive devices (photodetectors), and gas-sensitive sensors. The results of this dissertation contribute to the improvement of deposition technologies for oxide and kesterite compound films, deepen the understanding of structure-function relationships in nanomaterials, and expand the range of possible applications of these materials in modern electronic devices and components.To achieve the research objectives, laboratory synthesis methods for promising semiconductor nanomaterials, namely ZnO:In, Zn2SnO4, and Cu2MgxZn1-xSnS4, were developed at the initial stage. The colloidal polyol method was employed as the primary approach for nanoparticle synthesis, enabling control over particle size, morphology, and composition. Concurrently, preparation protocols for molecular precursor solutions were established, serving as the basis for formulating nanoparticle inks with optimized rheological properties. At the subsequent stage, nanoparticle inks adapted for vacuum-free deposition of thin films were produced based on the synthesized nanoparticles and molecular solutions. Spray and pulsed spray pyrolysis techniques were chosen as the main deposition methods, allowing the formation of uniform layers with high reproducibility and controlled thickness.To enhance the accuracy and stability of deposition, as well as to automate the process, a specialized laboratory thin-film deposition system was designed. This system implements a controlled process for forming thin semiconductor compound layers, providing flexible adjustment of deposition parameters such as substrate temperature, pressure, and spray solution feed frequency. Moreover, the system design and operating principles are scalable, offering prospects for adaptation to small-scale or even industrial production of nanostructured materials and devices based on them.A comprehensive study was conducted on the morphological, structural, optical, and electrical characteristics, as well as the chemical composition of NPs and thin films of IZO, Zn2SnO4, and Cu2MgxZn1-xSnS4 compounds, depending on the physicochemical and technological conditions of their synthesis. In particular, the influence of synthesis methods, dopant concentration, and annealing temperature was analyzed. This allowed for a deeper understanding of how various technological parameters affect the material properties, contributing to the optimization of fabrication processes. Such an approach ensures stability and reproducibility of material properties, which is crucial for their further application in optoelectronic devices, sensors, and electronic equipment.ZnO NPs doped with In (0-10 at.%) were synthesized using the polyol-colloidal method. The effect of doping on their chemical composition, morphology, structural, and substructural characteristics was studied. It was established that at In concentrations up to 2 at.%, the particles exhibit a single-phase structure containing only zinc oxide with a wurtzite structure. With a further increase in dopant concentration, secondary phases such as In2O3 and InOOH emerge. The lattice parameter a increases from 0.32967 nm to 0.33194 nm upon In incorporation, whereas the c parameter decreases from 0.52029 nm to 0.51896 nm. An increase in dopant concentration in the precursor from 0 to 10 at.% led to a corresponding rise in In content in NPs from 0 to 6.42 at.% and an increase in nanoparticle size from 15 to 24 nm.The effect of indium doping on the structural, substructural, optical, and electrical characteristics of ZnO films deposited by the spray pyrolysis method was investigated. The samples were synthesized using molecular solutions with an indium-to-zinc atomic ratio of 1, 3, 5, 7, and 10 at.%. Structural analysis confirmed that the films exhibit a hexagonal structure with a [110] growth texture, whose quality deteriorates with increasing doping levels. The study indicates the effective incorporation of indium atoms into the crystalline lattice of zinc oxide. This doping process leads to an increase in the band gap of the compound. The best electrical characteristics of IZO films (n = 3.4 × 1018 cm-3, ρ = 0.007 Ω·cm2, μ = 253 cm2/V·s) were achieved when using a precursor with a dopant concentration of 3 at.%, which is likely due to the superior structural quality of these films.A study was conducted on the structural, substructural, and optical characteristics of Zn2SnO4 NPs and thin films. The NPs were synthesized using the hydrothermal method for durations ranging from 16 to 32 hours, with 4-hour intervals. Based on particles with optimal parameters (28 hours), nanoparticle inks were formulated and subsequently sprayed to obtain oxide films. To optimize the structural characteristics, the deposited films were annealed in an argon atmosphere at temperatures of 523-773 K for 30 minutes. Scanning electron microscopy analysis revealed that the films, with a thickness of d = (4.90-8.45) μm and an inverse spinel structure, consisted of nanocrystals ranging in size from 27.8 to 36.0 nm, depending on the annealing temperature, and exhibited a [220] growth texture. The size of the coherent scattering regions in the films increased with higher annealing temperatures, from (3.85-5.56) nm at 523 K to (6.44-7.99) nm at 773 K. X-ray diffraction results were corroborated by Raman spectroscopy data, where the observed modes F2g(2), F2g(3) and A1g corresponded to the inverse spinel structure of Zn2SnO4. It was determined that increasing the annealing temperature led to a change in the optical bandgap of the films from 4.04 to 3.63 eV.For the first time, thin films of Cu2MgxZn1-xSnS4 solid solutions were obtained using the pulsed spray pyrolysis method. The effect of the Mg/Zn ratio in the precursor (0 ≤ y ≤ 0.5) on the structural, substructural, optical characteristics, and chemical composition of Cu2MgxZn1-xSnS4 thin films was investigated. X-ray diffraction analysis confirmed the formation of single-phase films with a kesterite structure. The single-phase nature was also supported by Raman spectroscopy results for samples obtained at y ≤ 0.3. Chemical analysis of the films confirmed the successful incorporation of magnesium into the thin layers at levels of (5.5-6.7) at.%. Increasing the overall magnesium content had little effect on the concentration of all other elements except zinc. The layers obtained at y = 0.1 exhibited the lowest overall dislocation density (ρ = 0.73 × 10¹⁷ lines/m²). Thus, substituting zinc with magnesium improved the quality of the solid solution at concentrations y < 0.3. It was established that the band gap of the undoped compound was 1.47 eV, while for doped samples, it decreased from 1.28 eV (y = 0.1) to 1.22 eV (y = 0.5). Therefore, the Cu2MgxZn1-xSnS4 solid solution is a promising and cost-effective material for the development of absorber layers in third-generation solar cells.The dependence of the structural, substructural, optical, and electrical characteristics of the ITO/ZnO:In/ZnO/NiO heterostructure on vacuum annealing in the temperature range of 573-773 K was established. The heterostructures were entirely fabricated using the spray pyrolysis method. X-ray diffraction analysis confirmed the presence of only the hexagonal ZnO phase and the cubic NiO phase in the studied samples, which was further validated by Raman spectroscopy. For the n-ZnO/p-NiO heterostructure annealed at 723 K, dark current-voltage characteristics (I-V curves) were measured at different temperatures.
520 # $a The analysis of the linear regions of the dark I-V curves in a semi-logarithmic scale indicated that charge transport in the structures is governed by a tunnel-recombination mechanism, with constants α = 1.16 × 10⁻4 V⁻1 and β = 2051 K⁻1. For the first time, a band diagram was constructed based on the Van Ruyven model to explain the electrical characteristics of the heterostructure. It was determined that the optimal annealing temperature, ensuring the best electro-physical and optical characteristics of the n-ZnO/p-NiO heterostructure, is 723 K.
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