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Metal/beta-gallium(III) oxide Interface chemistry & junction electronic properties

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Metal/beta-gallium(III) oxide Interface chemistry & junction electronic properties/ Hien T Pham.
作者:	Pham, Hien T.,
面頁冊數:	1 electronic resource (126 pages)
附註:	Source: Dissertations Abstracts International, Volume: 74-09, Section: B.
Contained By:	Dissertations Abstracts International74-09B.
標題:	Materials science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3552842
ISBN:	9781267916464

Metal/beta-gallium(III) oxide Interface chemistry & junction electronic properties
Pham, Hien T.,

Metal/beta-gallium(III) oxide Interface chemistry & junction electronic properties [electronic resource] /Hien T Pham. - 1 electronic resource (126 pages)

Source: Dissertations Abstracts International, Volume: 74-09, Section: B.

This work systematically investigated the interface interaction of Pd, Ni, Ti and Al on β-Ga2O3 single crystal (100) plane using in situ x-ray photoemission spectroscopy (XPS) both during growth and during sputter profiling. The two techniques give very similar results, demonstrating that in this case sputter profiling does not significantly alter the interface chemistry. Consistent with the relative compound heats of formation, as-deposited Ni and Pd show undetectable interface reaction with either Ga or O while Ti interacts immediately with both Ga and O and Al interacts primarily with O. Electrically, Ni contact on an annealed Ga2O3 surface has a Schottky barrier of 0.90 eV and Al contact barrier is 0.65 eV. Titanium also forms a rectifying contact with 0.35 eV barrier and changes to an ohmic contact after anneal. The core level shift from band bending during in-situ deposition indicated this low barrier height for Ti. Measuring the core level shift under bias condition independently confirmed the 0.35 eV value and demonstrates a direct measurement method for barrier height. Combining in situ bias with XPS analysis measured the change in contact barrier effected by anneal (Ti contact) or by short electric pulse (Pd contact). The data show that both metals can reduce Ga3+ to a metallic state under specific conditions. Measurement shows localized areas of Ga reduction under Pd, while Ga reduction distributes evenly across the contact area under Ti. This demonstrates methods to effect an interface interaction between metal and oxide and change the junction characteristic. Using XPS as a "contactless" voltmeter quantified the effected changes on the contact resistance, the bulk resistance and the buried Schottky barrier. The measurement and analysis procedure demonstrated in this work shows that combining in situ bias with XPS experiments can give powerful information about an active interface system. The method provides a practical approach to study the interface interaction of many other metal-compound semiconductor or dielectric systems.

English

ISBN: 9781267916464Subjects--Topical Terms:

557839
Materials science.
Subjects--Index Terms:

Depth profiling

Metal/beta-gallium(III) oxide Interface chemistry & junction electronic properties
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500 $a Publisher info.: Dissertation/Thesis.
500 $a Includes supplementary digital materials.
500 $a Advisors: Ohuchi, Fumio S. Committee members: Brush, Lucien N.; Olmstead, Marjorie A.; Yu, Qiuming.
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520 # $a This work systematically investigated the interface interaction of Pd, Ni, Ti and Al on β-Ga2O3 single crystal (100) plane using in situ x-ray photoemission spectroscopy (XPS) both during growth and during sputter profiling. The two techniques give very similar results, demonstrating that in this case sputter profiling does not significantly alter the interface chemistry. Consistent with the relative compound heats of formation, as-deposited Ni and Pd show undetectable interface reaction with either Ga or O while Ti interacts immediately with both Ga and O and Al interacts primarily with O. Electrically, Ni contact on an annealed Ga2O3 surface has a Schottky barrier of 0.90 eV and Al contact barrier is 0.65 eV. Titanium also forms a rectifying contact with 0.35 eV barrier and changes to an ohmic contact after anneal. The core level shift from band bending during in-situ deposition indicated this low barrier height for Ti. Measuring the core level shift under bias condition independently confirmed the 0.35 eV value and demonstrates a direct measurement method for barrier height. Combining in situ bias with XPS analysis measured the change in contact barrier effected by anneal (Ti contact) or by short electric pulse (Pd contact). The data show that both metals can reduce Ga3+ to a metallic state under specific conditions. Measurement shows localized areas of Ga reduction under Pd, while Ga reduction distributes evenly across the contact area under Ti. This demonstrates methods to effect an interface interaction between metal and oxide and change the junction characteristic. Using XPS as a "contactless" voltmeter quantified the effected changes on the contact resistance, the bulk resistance and the buried Schottky barrier. The measurement and analysis procedure demonstrated in this work shows that combining in situ bias with XPS experiments can give powerful information about an active interface system. The method provides a practical approach to study the interface interaction of many other metal-compound semiconductor or dielectric systems.
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650 # 4 $a Engineering. $3 561152
650 # 4 $a Inorganic chemistry. $3 1182077
653 # # $a Depth profiling
653 # # $a Gallium(III) oxide
653 # # $a In situ bias
653 # # $a In situ deposition
653 # # $a Interface chemistry
653 # # $a Metal contacts
653 # # $a Transparent conducting oxide
690 $a 0488
690 $a 0537
690 $a 0794
710 2 # $a University of Washington. $b Materials Science and Engineering. $3 1182422
720 1 $a Ohuchi, Fumio S. $e degree supervisor.
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791 $a Ph.D.
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