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Atmospheric pressure chemical vapor deposition of textured zinc oxide, doped titanium dioxide, and doped zinc oxide thin films

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Atmospheric pressure chemical vapor deposition of textured zinc oxide, doped titanium dioxide, and doped zinc oxide thin films/ Haifan Liang.
作者:	Liang, Haifan,
面頁冊數:	1 electronic resource (228 pages)
附註:	Source: Dissertations Abstracts International, Volume: 59-11, Section: B.
Contained By:	Dissertations Abstracts International59-11B.
標題:	Condensed matter physics. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9822907
ISBN:	9780591749625

Atmospheric pressure chemical vapor deposition of textured zinc oxide, doped titanium dioxide, and doped zinc oxide thin films
Liang, Haifan,

Atmospheric pressure chemical vapor deposition of textured zinc oxide, doped titanium dioxide, and doped zinc oxide thin films [electronic resource] /Haifan Liang. - 1 electronic resource (228 pages)

Source: Dissertations Abstracts International, Volume: 59-11, Section: B.

Atmospheric pressure chemical vapor deposition of several thin film materials is described. Textured ZnO films were deposited as a textured antireflection layer on polysilicon solar cells using diethylzinc and water as the precursors. We were able to deposit textured ZnO films of high optical transmittance at a low temperature (250$\\sp\\circ$C) with high growth rates (up to 4000A/minute), and good uniformity and reproducibility. The improved efficiencies on polysilicon solar cells were mainly due to increase in the short circuit currents. Conductive niobium and hydrogen doped titanium dioxide films were deposited from titanium isopropoxide, niobium ethoxide and cyclohexenone. An ultrasonic atomizer nozzle was used to vaporize the precursor. Deposition temperature ranged form 450$\\sp\\circ$C to 560$\\sp\\circ$C. Film resistivity had a strong dependence on film thickness up to 1.5 $\\mu$m. At a film thickness of 3 $\\mu$m, a low resistivity of $3\imes 10\\sp{-3}\\ \\Omega$ cm was achieved for the niobium doped films. The mobility was about 0.6-0.7 cm$\\sp2$/Vs. The electron concentration was about 2-3 $\imes$ 10$\\sp{21}$/cm$\\sp3.$ A thin layer of niobium doped titanium dioxide was deposited on fluorine doped tin oxide to study its application as a protection layer on solar cells. The niobium doped films had high visible absorption. The hydrogen doped films had lower visible absorption. The resistivity of the hydrogen doped films were as low as the niobium doped films, but the resistivity increased with time. The mobility of the hydrogen doped films was about 12-20 cm$\\sp2$/Vs. The electron concentration was about 5-8 $\imes$ 10$\\sp $/cm$\\sp3.$ Transparent conducting fluorine and aluminum doped zinc oxide thin films were deposited from tetramethylethylenediamine diethylzinc, ethanol, benzoyl fluoride, $\\rm Et\\sb3Al\\sb2(O\\sp{\\rm S}Bu)\\sb3,$ and Al($\\beta$-diketonate). The films were polycrystalline and highly oriented with the c-axis perpendicular to the substrate. The aging time of the precursor affected the electrical and optical properties of the films. The resistivity of the films was as low as $4\imes 10\\sp{-4}\\ \\Omega$cm. The mobility was as high as 45 cm$\\sp2$/Vs. The optical absorption of the films was as low as 3% at a sheet resistance of 7 $\\Omega /\\square .$ The diffuse transmittance was up to 20% at 6500A. Amorphous silicon solar cells were deposited on textured fluorine doped zinc oxide. The short circuit current improved over cells made with fluorine doped tin oxide due to the superior optical properties.

English

ISBN: 9780591749625Subjects--Topical Terms:

1148471
Condensed matter physics.

Atmospheric pressure chemical vapor deposition of textured zinc oxide, doped titanium dioxide, and doped zinc oxide thin films
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245 1 0 $a Atmospheric pressure chemical vapor deposition of textured zinc oxide, doped titanium dioxide, and doped zinc oxide thin films $c Haifan Liang. $h [electronic resource] /
264 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 1998
300 $a 1 electronic resource (228 pages)
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500 $a Source: Dissertations Abstracts International, Volume: 59-11, Section: B.
500 $a Publisher info.: Dissertation/Thesis.
500 $a Advisors: Gordon, Roy G.
502 $b Ph.D. $c Harvard University $d 1998.
520 # $a Atmospheric pressure chemical vapor deposition of several thin film materials is described. Textured ZnO films were deposited as a textured antireflection layer on polysilicon solar cells using diethylzinc and water as the precursors. We were able to deposit textured ZnO films of high optical transmittance at a low temperature (250$\\sp\\circ$C) with high growth rates (up to 4000A/minute), and good uniformity and reproducibility. The improved efficiencies on polysilicon solar cells were mainly due to increase in the short circuit currents. Conductive niobium and hydrogen doped titanium dioxide films were deposited from titanium isopropoxide, niobium ethoxide and cyclohexenone. An ultrasonic atomizer nozzle was used to vaporize the precursor. Deposition temperature ranged form 450$\\sp\\circ$C to 560$\\sp\\circ$C. Film resistivity had a strong dependence on film thickness up to 1.5 $\\mu$m. At a film thickness of 3 $\\mu$m, a low resistivity of $3\imes 10\\sp{-3}\\ \\Omega$ cm was achieved for the niobium doped films. The mobility was about 0.6-0.7 cm$\\sp2$/Vs. The electron concentration was about 2-3 $\imes$ 10$\\sp{21}$/cm$\\sp3.$ A thin layer of niobium doped titanium dioxide was deposited on fluorine doped tin oxide to study its application as a protection layer on solar cells. The niobium doped films had high visible absorption. The hydrogen doped films had lower visible absorption. The resistivity of the hydrogen doped films were as low as the niobium doped films, but the resistivity increased with time. The mobility of the hydrogen doped films was about 12-20 cm$\\sp2$/Vs. The electron concentration was about 5-8 $\imes$ 10$\\sp $/cm$\\sp3.$ Transparent conducting fluorine and aluminum doped zinc oxide thin films were deposited from tetramethylethylenediamine diethylzinc, ethanol, benzoyl fluoride, $\\rm Et\\sb3Al\\sb2(O\\sp{\\rm S}Bu)\\sb3,$ and Al($\\beta$-diketonate). The films were polycrystalline and highly oriented with the c-axis perpendicular to the substrate. The aging time of the precursor affected the electrical and optical properties of the films. The resistivity of the films was as low as $4\imes 10\\sp{-4}\\ \\Omega$cm. The mobility was as high as 45 cm$\\sp2$/Vs. The optical absorption of the films was as low as 3% at a sheet resistance of 7 $\\Omega /\\square .$ The diffuse transmittance was up to 20% at 6500A. Amorphous silicon solar cells were deposited on textured fluorine doped zinc oxide. The short circuit current improved over cells made with fluorine doped tin oxide due to the superior optical properties.
546 $a English
590 $a School code: 0084
650 # 4 $a Condensed matter physics. $3 1148471
650 # 4 $a Materials science. $3 557839
650 # 4 $a Condensation. $3 592130
690 $a 0611
690 $a 0794
710 2 # $a Harvard University. $3 1180437
720 1 $a Gordon, Roy G. $e degree supervisor.
773 0 # $t Dissertations Abstracts International $g 59-11B.
790 $a 0084
791 $a Ph.D.
792 $a 1998
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9822907