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Properties of advanced semiconductor...

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Rumyantsev, Sergey L

Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe

Record Type:	Language materials, printed : monographic
Title Information:	GaN, AlN, InN, BN, SiC, SiGe
Secondary Intellectual Responsibility:	LevinshteinM. E,
Secondary Intellectual Responsibility:	RumyantsevSergey L,
Secondary Intellectual Responsibility:	ShurMichael,
Place of Publication:	New York
Published:	Wiley;
Year of Publication:	2001
Description:	xvii, 194 pill : 25 cm;
Subject:	Semiconductors - Materials -
ISBN:	0471358274

Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe
Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe / edited by Michael E. Levinshtein, Sergey L. Rumyantsev, Michael S. Shur - New York : Wiley, 2001. - xvii, 194 p ; ill ; 25 cm.
Includes bibliographical references.
ISBN 0471358274
Semiconductors -- Materials

Levinshtein, M. E

Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe
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200 1 $a Properties of advanced semiconductor materials $e GaN, AlN, InN, BN, SiC, SiGe $f edited by Michael E. Levinshtein, Sergey L. Rumyantsev, Michael S. Shur
210 $a New York $c Wiley $d 2001
215 0 $a xvii, 194 p $c ill $d 25 cm
320 $a Includes bibliographical references
606 $a Semiconductors $x Materials $3 410247 $2 lc $3 727668
676 $a 537.6/226 $v 21
680 $a QC611 $b P78 2001
702 $a Levinshtein $b M. E $3 440886
702 $a Rumyantsev $b Sergey L $3 440887
702 $a Shur $b Michael $3 411846
801 1 $a cw $b 國立虎尾科技大學圖書館圖書館 $c 20020515

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E022527

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537.6226 P965 2001

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