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以無電鍍方式製備鈷鎢磷薄膜作為擴散阻障層之研究 = The study ...

sin-sian Wu

以無電鍍方式製備鈷鎢磷薄膜作為擴散阻障層之研究 = The study of Co-W-P thin film as diffusion barrier layer by electroless plating process

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	The study of Co-W-P thin film as diffusion barrier layer by electroless plating process
作者:	吳信賢,
其他作者:	蔡定侃,
其他作者:	楊立中,
其他團體作者:	國立虎尾科技大學
出版地:	雲林縣
出版者:	國立虎尾科技大學;
出版年:	民96[2007]
版本:	初版
面頁冊數:	126面圖,表 : 30公分;
標題:	擴散阻障層
標題:	CoWP
電子資源:	http://140.130.12.251/ETD-db/ETD-search-c/view_etd?URN=etd-0711107-164232
摘要註:	本研究是利用無電鍍方式，藉由簡單的化學氧化還原反應，在已經由敏化、活化處理過後具有催化能力的矽基材上，沉積三種不同pH 8.5、9.0及9.2 的CoWP薄膜(100nm)作為擴散阻障層，接著以相同的製程方式在CoWP薄膜上沉積銅金屬層(150nm)，後續進行快速退火熱處理(Rapid Thermal Annealing , RTA)300~800℃，真空下持溫時間為5分鐘。並使用四點探針(Four point probe)、X光繞射儀(XRD)、掃瞄式電子顯微鏡(SEM)、場發射掃瞄式電子顯微鏡(FE-SEM)、穿透式電子顯微鏡(TEM)分析儀器，針對CoWP薄膜作為擴散阻障層的評估。實驗結果指出pH 9.0和9.2的CoWP阻障層(100nm)能抵擋銅金屬擴散溫度達600℃、而pH 8.5的CoWP阻障層(100nm)為最差，只能抵擋銅金屬擴散溫度達500℃。此外，在不同CoWP阻障層膜厚方面的比較中發現，pH 9.0 30nm CoWP阻障層能抵擋銅金屬擴散的溫度達500℃。而CoWP阻障層失效機制為：在高溫時誘發Cu/CoWP界面發生擴散，使得銅金屬穿透CoWP阻障層擴散至矽基材內部形成銅矽化合物，且在同時間鈷穿透銅膜，在銅膜上形成顆粒狀，最後銅矽化合物中的矽原子會與鈷原子反應，形成鈷矽化合物。無電鍍CoWP在矽基材上的鍍層結構為柱狀結構，且藉由錯化劑(檸檬酸鈉)濃度含量的改變，可將原本的析鍍速率13.65 nm/min提升至20.28 nm/min(pH 9.0、85℃)，析鍍活化能為45.02 KJ/mol。 In this work, The Co-W-P films with 100nm thickness as diffusion barrier were deposited on Si substrate in an electroless plating bath at pH value of 8.5, 9.0 and 9.2, respectively. Before electroless plating, the Si substrate was successively eleansed, sensitized and activated. After a Cu film with 150nm thickness was deposited on Co-W-P film by electroless plating, the sample was annealed in vaccum for 5 minutes in a rapid thermal annealing (RTA) furnace at 300~800℃. The annealed samples were characterized using an X-ray diffraction (XRD) for phase structure, a scanning electron microscope (SEM) and field emission scanning electron microscope (FE-SEM) for morphology, a transmission electron microscope (TEM) for microstructure, and a four point probe for property of diffusion barrier.The result showed that the Co-W-P films (100nm) grown at pH value of 9.0 and 9.2 were good diffusion barriers which could hinder against the diffusion of Cu up to 600℃, and the Co-W-P film (100nm) grown at pH value of 8.5 could hinder against the diffusion of Cu only below 500℃. However the Co-W-P film grown at pH value of 9.0 could hinder against the diffusion of Cu only below 500℃, when its thickness was 30nm. The mechanism for the failue of Co-W-P diffusion barrier can be deduced as follows. When temperature was increased up, the Cu atom in Cu/CoWP/Si structure would diffuse into Si substrate through Co-W-P film and became copper silicide with Si, the Co atom in Cu/CoWP/Si structure would diffuse through Cu film and form particle on the surface of Cu film, finally the Co atom would react with the Si atom of capper silicide and become cobalt silicide. The electroless Co-W-P film on Si substrate has pillar structure. The growth rate of the electroless Co-W-P film deposited at pH value of 9.0 and temperature of 85℃ can be increased to 20.28 nm/min from 13.65 nm/min only by adjustment of the concentration conplexing agent (sodium citrate). The activation energy for the deposition of this Co-W-P film is 45.02 KJ/mole.

以無電鍍方式製備鈷鎢磷薄膜作為擴散阻障層之研究 = The study of Co-W-P thin film as diffusion barrier layer by electroless plating process
吳, 信賢

以無電鍍方式製備鈷鎢磷薄膜作為擴散阻障層之研究 = The study of Co-W-P thin film as diffusion barrier layer by electroless plating process / 吳信賢撰 - 初版. - 雲林縣 : 國立虎尾科技大學, 民96[2007]. - 126面 ; 圖,表 ; 30公分.
擴散阻障層CoWP

蔡, 定侃

以無電鍍方式製備鈷鎢磷薄膜作為擴散阻障層之研究 = The study of Co-W-P thin film as diffusion barrier layer by electroless plating process
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200 1 $a 以無電鍍方式製備鈷鎢磷薄膜作為擴散阻障層之研究 $d The study of Co-W-P thin film as diffusion barrier layer by electroless plating process $f 吳信賢撰
205 $a 初版
210 $a 雲林縣 $d 民96[2007] $c 國立虎尾科技大學
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314 $a 指導教授：蔡定侃、楊立中
328 $a 碩士論文--國立虎尾科技大學光電與材料科技研究所
330 $a 本研究是利用無電鍍方式，藉由簡單的化學氧化還原反應，在已經由敏化、活化處理過後具有催化能力的矽基材上，沉積三種不同pH 8.5、9.0及9.2 的CoWP薄膜(100nm)作為擴散阻障層，接著以相同的製程方式在CoWP薄膜上沉積銅金屬層(150nm)，後續進行快速退火熱處理(Rapid Thermal Annealing , RTA)300~800℃，真空下持溫時間為5分鐘。並使用四點探針(Four point probe)、X光繞射儀(XRD)、掃瞄式電子顯微鏡(SEM)、場發射掃瞄式電子顯微鏡(FE-SEM)、穿透式電子顯微鏡(TEM)分析儀器，針對CoWP薄膜作為擴散阻障層的評估。實驗結果指出pH 9.0和9.2的CoWP阻障層(100nm)能抵擋銅金屬擴散溫度達600℃、而pH 8.5的CoWP阻障層(100nm)為最差，只能抵擋銅金屬擴散溫度達500℃。此外，在不同CoWP阻障層膜厚方面的比較中發現，pH 9.0 30nm CoWP阻障層能抵擋銅金屬擴散的溫度達500℃。而CoWP阻障層失效機制為：在高溫時誘發Cu/CoWP界面發生擴散，使得銅金屬穿透CoWP阻障層擴散至矽基材內部形成銅矽化合物，且在同時間鈷穿透銅膜，在銅膜上形成顆粒狀，最後銅矽化合物中的矽原子會與鈷原子反應，形成鈷矽化合物。無電鍍CoWP在矽基材上的鍍層結構為柱狀結構，且藉由錯化劑(檸檬酸鈉)濃度含量的改變，可將原本的析鍍速率13.65 nm/min提升至20.28 nm/min(pH 9.0、85℃)，析鍍活化能為45.02 KJ/mol。 In this work, The Co-W-P films with 100nm thickness as diffusion barrier were deposited on Si substrate in an electroless plating bath at pH value of 8.5, 9.0 and 9.2, respectively. Before electroless plating, the Si substrate was successively eleansed, sensitized and activated. After a Cu film with 150nm thickness was deposited on Co-W-P film by electroless plating, the sample was annealed in vaccum for 5 minutes in a rapid thermal annealing (RTA) furnace at 300~800℃. The annealed samples were characterized using an X-ray diffraction (XRD) for phase structure, a scanning electron microscope (SEM) and field emission scanning electron microscope (FE-SEM) for morphology, a transmission electron microscope (TEM) for microstructure, and a four point probe for property of diffusion barrier.The result showed that the Co-W-P films (100nm) grown at pH value of 9.0 and 9.2 were good diffusion barriers which could hinder against the diffusion of Cu up to 600℃, and the Co-W-P film (100nm) grown at pH value of 8.5 could hinder against the diffusion of Cu only below 500℃. However the Co-W-P film grown at pH value of 9.0 could hinder against the diffusion of Cu only below 500℃, when its thickness was 30nm. The mechanism for the failue of Co-W-P diffusion barrier can be deduced as follows. When temperature was increased up, the Cu atom in Cu/CoWP/Si structure would diffuse into Si substrate through Co-W-P film and became copper silicide with Si, the Co atom in Cu/CoWP/Si structure would diffuse through Cu film and form particle on the surface of Cu film, finally the Co atom would react with the Si atom of capper silicide and become cobalt silicide. The electroless Co-W-P film on Si substrate has pillar structure. The growth rate of the electroless Co-W-P film deposited at pH value of 9.0 and temperature of 85℃ can be increased to 20.28 nm/min from 13.65 nm/min only by adjustment of the concentration conplexing agent (sodium citrate). The activation energy for the deposition of this Co-W-P film is 45.02 KJ/mole.
510 1 $a The study of Co-W-P thin film as diffusion barrier layer by electroless plating process
610 0 $a 擴散阻障層 $a 無電鍍 $a 鈷鎢磷
610 1 $a CoWP $a diffusion barrier layer $a electroless plating
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702 $a 蔡 $b 定侃 $3 541188
702 $a 楊 $b 立中 $3 489804
712 $a 國立虎尾科技大學 $b 工業工程與管理究所 $3 523742
770 $a sin-sian Wu $3 586579
772 $a Ting-Kan Tsai $3 541189
772 $a Li-Chung Yang $3 538303
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856 7 $u http://140.130.12.251/ETD-db/ETD-search-c/view_etd?URN=etd-0711107-164232