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利用化學氣相沉積還原的雙金屬氧化物奈米晶體在前瞻微電子元件特性研究 = ...

Chin-Lung Cheng

利用化學氣相沉積還原的雙金屬氧化物奈米晶體在前瞻微電子元件特性研究 = Study of bimetallic oxide nanocrystal reduced by chemical-vapor-deposition on advancedmicroelectronic devices applications

Record Type:	Language materials, printed : monographic
Paralel Title:	Study of bimetallic oxide nanocrystal reduced by chemical-vapor-deposition on advancedmicroelectronic devices applications
Author:	黃崧瑋,
Secondary Intellectual Responsibility:	鄭錦隆,
Secondary Intellectual Responsibility:	劉建惟,
Secondary Intellectual Responsibility:	國立虎尾科技大學
Place of Publication:	[雲林縣]
Published:	國立虎尾科技大學;
Year of Publication:	民96[2007]
Edition:	初版
Description:	135面圖,表 : 30公分;
Subject:	微電子元件
Subject:	CoxMoyO
Online resource:	http://140.130.12.251/ETD-db/ETD-search-c/view_etd?URN=etd-0522107-121711
Summary:	本論文利用低溫化學氣相沉積法[Chemical Vapor Deposition (CVD)] 還原雙金屬氧化物奈米晶體深埋在高介電係數HfON層中，其雙金屬醋酸鹽溶液是以醋酸鈷[(CH3COOH)2Co4H2O]、醋酸鉬[(CH3COOH)2Mo]以及醋酸鐵[(CH3COOH)2Fe4H2O]之搭配組合，並以酒精當作溶液。藉由改變醋酸鹽重量百分比濃度、不同的醋酸鹽雙金屬組合、HfON之阻擋氧化層厚度（Blocking oxide）、不同的試片浸泡時間(Dip time)、利用滴落法以及HfON表面處理等條件，成長高效能雙金屬氧化物奈米晶體並應用於非揮發性記憶體元件。利用C-V量測CoxMoyO雙金屬氧化物奈米晶體非揮發性記憶體元件，在±5 V範圍的掃略下，可得到其遲滯範圍為700 mV，其可捕捉陷阱密度為1.1×1012cm-2。由SEM圖可觀察到CoxMoyO雙金屬氧化物奈米晶體表面密度為1×1011cm-2，而直徑為4-20 nm。由物性以及電性結果證實具備CoxMoyO雙金屬氧化物奈米晶體之非揮發性記憶體元件比具備FexCoyO或FexMoyO雙金屬氧化物之特性為佳。為了提高CoxMoyO雙金屬氧化物奈米晶體表面密度，採用滴落法以及鈦氧化物（TiOx）置入HfON表面，使得非揮發性記憶體元件特性得以進一步提高，又由研究發現在CoxMoyO, FexCoyO以及FexMoyO寫入特性皆是以電洞捕捉為主要驅動電荷。 In this thesis, the reduced bimetallic oxide nanocrystal (BONs) embedded in the hafnium oxynitride (HfON) high-k film have been developed by means of the low-temperature chemical-vapor-deposition (CVD) method. The bimetallic acetate solutions were prepared by dissolving the X-metal acetate (CH3COOH)2X and Y-metal acetate (CH3COOH)2Y (X, Y= Co or Mo, or Fe) into ethanol. By modulated the various weight percentage of the bimetallic acetate, the different acetates mixed solutions, the various thicknesses of the HfON blocking oxide, the various dip-coating times, the drop-coating and the HfON surface treatment, the high-quality BON can be achieved for the nonvolatile flash memory (NFM) devices applications. Capacitance-voltage (C-V) measurements estimate that a charge trap states density of 1.1 x 1012 cm-2 and a flatband voltage shift of 700 mV were achieved during the C-V hysteresis sweep at 5 V for memory devices with CoxMoyO BONs. Scanning electron microscopy image displays that the CoxMoyO BONs with a diameter of ~4-20 nm and a surface density of ~1 x 1011 cm-2 were obtained. The results also show that the electrical and surface characteristics of memory devices with CoxMoyO BONs are better than those of memory devices with FexCoyO or FexMoyO. The electrical and surface properties of nonvolatile memory devices with CoxMoyO BONs can be further improved by the drop techniques and the TiOx incorporated into HfON surface. The writing characteristics measurements illustrate that the memory effects of devices with CoxMoyO, FexCoyO, and FexMoyO as charge trapping layers are mainly due to the holes trapping.

利用化學氣相沉積還原的雙金屬氧化物奈米晶體在前瞻微電子元件特性研究 = Study of bimetallic oxide nanocrystal reduced by chemical-vapor-deposition on advancedmicroelectronic devices applications
黃, 崧瑋

利用化學氣相沉積還原的雙金屬氧化物奈米晶體在前瞻微電子元件特性研究 = Study of bimetallic oxide nanocrystal reduced by chemical-vapor-deposition on advancedmicroelectronic devices applications / 黃崧瑋撰 - 初版. - [雲林縣] : 國立虎尾科技大學, 民96[2007]. - 135面 ; 圖,表 ; 30公分.
參考書目：131-134面.
微電子元件CoxMoyO

鄭, 錦隆

利用化學氣相沉積還原的雙金屬氧化物奈米晶體在前瞻微電子元件特性研究 = Study of bimetallic oxide nanocrystal reduced by chemical-vapor-deposition on advancedmicroelectronic devices applications
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330 $a 本論文利用低溫化學氣相沉積法[Chemical Vapor Deposition (CVD)] 還原雙金屬氧化物奈米晶體深埋在高介電係數HfON層中，其雙金屬醋酸鹽溶液是以醋酸鈷[(CH3COOH)2Co4H2O]、醋酸鉬[(CH3COOH)2Mo]以及醋酸鐵[(CH3COOH)2Fe4H2O]之搭配組合，並以酒精當作溶液。藉由改變醋酸鹽重量百分比濃度、不同的醋酸鹽雙金屬組合、HfON之阻擋氧化層厚度（Blocking oxide）、不同的試片浸泡時間(Dip time)、利用滴落法以及HfON表面處理等條件，成長高效能雙金屬氧化物奈米晶體並應用於非揮發性記憶體元件。利用C-V量測CoxMoyO雙金屬氧化物奈米晶體非揮發性記憶體元件，在±5 V範圍的掃略下，可得到其遲滯範圍為700 mV，其可捕捉陷阱密度為1.1×1012cm-2。由SEM圖可觀察到CoxMoyO雙金屬氧化物奈米晶體表面密度為1×1011cm-2，而直徑為4-20 nm。由物性以及電性結果證實具備CoxMoyO雙金屬氧化物奈米晶體之非揮發性記憶體元件比具備FexCoyO或FexMoyO雙金屬氧化物之特性為佳。為了提高CoxMoyO雙金屬氧化物奈米晶體表面密度，採用滴落法以及鈦氧化物（TiOx）置入HfON表面，使得非揮發性記憶體元件特性得以進一步提高，又由研究發現在CoxMoyO, FexCoyO以及FexMoyO寫入特性皆是以電洞捕捉為主要驅動電荷。 In this thesis, the reduced bimetallic oxide nanocrystal (BONs) embedded in the hafnium oxynitride (HfON) high-k film have been developed by means of the low-temperature chemical-vapor-deposition (CVD) method. The bimetallic acetate solutions were prepared by dissolving the X-metal acetate (CH3COOH)2X and Y-metal acetate (CH3COOH)2Y (X, Y= Co or Mo, or Fe) into ethanol. By modulated the various weight percentage of the bimetallic acetate, the different acetates mixed solutions, the various thicknesses of the HfON blocking oxide, the various dip-coating times, the drop-coating and the HfON surface treatment, the high-quality BON can be achieved for the nonvolatile flash memory (NFM) devices applications. Capacitance-voltage (C-V) measurements estimate that a charge trap states density of 1.1 x 1012 cm-2 and a flatband voltage shift of 700 mV were achieved during the C-V hysteresis sweep at 5 V for memory devices with CoxMoyO BONs. Scanning electron microscopy image displays that the CoxMoyO BONs with a diameter of ~4-20 nm and a surface density of ~1 x 1011 cm-2 were obtained. The results also show that the electrical and surface characteristics of memory devices with CoxMoyO BONs are better than those of memory devices with FexCoyO or FexMoyO. The electrical and surface properties of nonvolatile memory devices with CoxMoyO BONs can be further improved by the drop techniques and the TiOx incorporated into HfON surface. The writing characteristics measurements illustrate that the memory effects of devices with CoxMoyO, FexCoyO, and FexMoyO as charge trapping layers are mainly due to the holes trapping.
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