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鈦鉭摻雜氮化鉿在前瞻金氧半元件特性研究 = Study of ti an...

洪政豪

鈦鉭摻雜氮化鉿在前瞻金氧半元件特性研究 = Study of ti and ta-doped hfoxny on characteristics of advanced metal-oxide-semiconductor devices

Record Type:	Language materials, printed : monographic
Paralel Title:	Study of ti and ta-doped hfoxny on characteristics of advanced metal-oxide-semiconductor devices
Author:	邱閔聖,
Secondary Intellectual Responsibility:	洪政豪,
Secondary Intellectual Responsibility:	鄭錦隆,
Place of Publication:	雲林縣
Published:	國立虎尾科技大學;
Year of Publication:	民97[2008]
Edition:	初版
Description:	145面圖 : 30公分;
Subject:	後沈積熱處理
Subject:	氮化鉿
Subject:	氮化鉿鈦鉭
Subject:	高介電係數材料
Subject:	HfOxNy
Subject:	HfTiTaON
Subject:	High-k materials
Subject:	post-deposition annealing
Online resource:	http://cetd.lib.nfu.edu.tw/etdservice/view_metadata?etdun=U0028-3007200810314900

鈦鉭摻雜氮化鉿在前瞻金氧半元件特性研究 = Study of ti and ta-doped hfoxny on characteristics of advanced metal-oxide-semiconductor devices
邱, 閔聖

鈦鉭摻雜氮化鉿在前瞻金氧半元件特性研究 = Study of ti and ta-doped hfoxny on characteristics of advanced metal-oxide-semiconductor devices / 邱閔聖撰 - 初版. - 雲林縣 : 國立虎尾科技大學, 民97[2008]. - 145面 ; 圖 ; 30公分.
含參考書目.
後沈積熱處理氮化鉿氮化鉿鈦鉭高介電係數材料HfOxNyHfTiTaONHigh-k materialspost-deposition annealing

洪, 政豪

鈦鉭摻雜氮化鉿在前瞻金氧半元件特性研究 = Study of ti and ta-doped hfoxny on characteristics of advanced metal-oxide-semiconductor devices
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328 $a 碩士論文--國立虎尾科技大學機械與機電工程研究所
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