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Competing for the Future : = How Digital Innovations are Changing the World.
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
Competing for the Future :/
其他題名:
How Digital Innovations are Changing the World.
作者:
Kressel, Henry.
其他作者:
Lento, Thomas V.
出版者:
Leiden :Cambridge University Press, : 2007.,
面頁冊數:
423 p.
標題:
Technological innovations. -
電子資源:
Click here to view book
ISBN:
9780511282614 (electronic bk.)
Competing for the Future : = How Digital Innovations are Changing the World.
Kressel, Henry.
Competing for the Future :
How Digital Innovations are Changing the World.[electronic resource]. - Leiden :Cambridge University Press,2007. - 423 p.
Cover; Half-title; Title; Copyright; Dedication; Contents; Figures; Tables; Acknowledgements; Introduction – Competing for the future: How digital innovations are changing the world; Defining innovation; Building the digital world; Innovation on a global scale; The new world order; PART I: The technology – how electronic devices work – digital systems and software; 1 Genesis: Inventing electronics for the digital world; 2 Building digital systems; PART II: Innovators, entrepreneurs, and venture capitalists; 3 Edison’s legacy: Industrial R&D; 4 R&D goes global
An explanation of how digital technology works, why it matters and how it is financed.
Electronic reproduction.
Available via World Wide Web.
Mode of access: World Wide Web.
ISBN: 9780511282614 (electronic bk.)Subjects--Topical Terms:
564143
Technological innovations.
Index Terms--Genre/Form:
554714
Electronic books.
LC Class. No.: T173.8 .K74 2007eb
Dewey Class. No.: 338.064
Competing for the Future : = How Digital Innovations are Changing the World.
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5 Financing innovation: Venture capitalPART III: Global reach, global repercussions; 6 Manufacturing: Globalizing faster than ever; 7 Your government is here to help; 8 The digital world: Industries transformed; 9 The digital world: A global village; Appendix 1.1: Smaller, faster, more efficient MOSFETs; Appendix 1.2: Building multi-transistor logic gates; Appendix 1.3: MOSFETs in memory devices; Appendix 1.4: CMOS reduces logic gate power dissipation; App
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