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III-V nitride semiconductors : = app...

Manasreh, Mahmoud Omar.

III-V nitride semiconductors : = applications & devices /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	III-V nitride semiconductors :/ edited by E.T. Yu and M.O. Manasreh.
Reminder of title:	applications & devices /
remainder title:	3-5 nitride semiconductors
other author:	Yu, E. T.
Published:	New York :Taylor & Francis, : 2003.,
Description:	xiv, 700 p. :ill. ; : 24 cm.;
Subject:	Semiconductors - Materials. -
Online resource:	http://www.loc.gov/catdir/toc/fy041/2002018064.html
Online resource:	http://www.loc.gov/catdir/enhancements/fy0653/2002018064-d.html
ISBN:	1560329742 (hbk.) :

III-V nitride semiconductors : = applications & devices /
III-V nitride semiconductors :applications & devices /3-5 nitride semiconductorsedited by E.T. Yu and M.O. Manasreh. - New York :Taylor & Francis,2003. - xiv, 700 p. :ill. ;24 cm. - Optoelectronic properties of semiconductors and superlattices ;v. 16.

Includes bibliographical references and index.

Machine generated contents note: About the Series vii --Preface ix --Introduction xi 1 Ohmic Contacts to GaN I -- M. W Cole and P C. Joshi --2 Characterization of Schottky Contacts on Nitride Semiconductors 67 -- LS. Yu and E.T. Yu --3 Integration of GaN Thin Films with Dissimilar Substrate Materials by Wafer Bonding and Laser Lift-Off 107 -- W.S. Wong, TD. Sands, andN.W. Cheung --4 Spontaneous and Piezoelectric Polarization in Nitride Heterostructures 161 -- E.T. Yu --5 AlGaN/GaN High Electron Mobility Transistors 193 -- R. Gaska, M.S. Shur, and A. Khan --6 Two-Dimensional Electron Gas Transport Properties in AlGaN/GaN Heterostructure Field-Effect Transistors 271 -- N. Maeda and N. Kobayashi --7 Electron Transport in Wide-Bandgap Semiconductors and Heterostructures 309 -- N.A. Zakhleniuk, B.K. Ridley, and C.R. Bennett --8 GaN Metal-Semiconductor Field-Effect Transistor 369 -- T: Egawa and M. Umeno --9 Piezoelectric Effect in Group-III Nitride-Based Heterostructures and Quantum Wells 399 -- T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki 10 AlGaInN MQW Laser Diodes 439 -- D.P Bour and M. Kneissl --11 Blue Vertical Cavity Surface Emitting Lasers and InGaN Quantum Dot Lasers 503 -- T. Someya, K. Tachibana, and Y. Arakawa --12 III-Nitride-Based UV Photodetectors 525 -- E. Monroy, E Calle, E. Muioz, and F Omnks --13 III-Nitride Ultraviolet Photodetectors 593 -- J.C. Carrano --14 AIGaN UV Photodetectors 675 -- W. Yang --Index 693.

ISBN: 1560329742 (hbk.) :GBP195.00

LCCN: 2002018064Subjects--Topical Terms:

673601
Semiconductors
--Materials.

LC Class. No.: TK7871.15.N57 / .A1297 2003

Dewey Class. No.: 621.3815/2

III-V nitride semiconductors : = applications & devices /
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020 $a 9781560329749
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245 1 0 $a III-V nitride semiconductors : $b applications & devices / $c edited by E.T. Yu and M.O. Manasreh.
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505 8 # $a Machine generated contents note: About the Series vii --Preface ix --Introduction xi 1 Ohmic Contacts to GaN I -- M. W Cole and P C. Joshi --2 Characterization of Schottky Contacts on Nitride Semiconductors 67 -- LS. Yu and E.T. Yu --3 Integration of GaN Thin Films with Dissimilar Substrate Materials by Wafer Bonding and Laser Lift-Off 107 -- W.S. Wong, TD. Sands, andN.W. Cheung --4 Spontaneous and Piezoelectric Polarization in Nitride Heterostructures 161 -- E.T. Yu --5 AlGaN/GaN High Electron Mobility Transistors 193 -- R. Gaska, M.S. Shur, and A. Khan --6 Two-Dimensional Electron Gas Transport Properties in AlGaN/GaN Heterostructure Field-Effect Transistors 271 -- N. Maeda and N. Kobayashi --7 Electron Transport in Wide-Bandgap Semiconductors and Heterostructures 309 -- N.A. Zakhleniuk, B.K. Ridley, and C.R. Bennett --8 GaN Metal-Semiconductor Field-Effect Transistor 369 -- T: Egawa and M. Umeno --9 Piezoelectric Effect in Group-III Nitride-Based Heterostructures and Quantum Wells 399 -- T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki 10 AlGaInN MQW Laser Diodes 439 -- D.P Bour and M. Kneissl --11 Blue Vertical Cavity Surface Emitting Lasers and InGaN Quantum Dot Lasers 503 -- T. Someya, K. Tachibana, and Y. Arakawa --12 III-Nitride-Based UV Photodetectors 525 -- E. Monroy, E Calle, E. Muioz, and F Omnks --13 III-Nitride Ultraviolet Photodetectors 593 -- J.C. Carrano --14 AIGaN UV Photodetectors 675 -- W. Yang --Index 693.
650 # 0 $a Semiconductors $x Materials. $3 673601
650 # 0 $a Nitrides. $3 678695
700 1 # $a Yu, E. T. $3 700454
700 1 # $a Manasreh, Mahmoud Omar. $3 700455
856 4 1 $3 Table of contents only $u http://www.loc.gov/catdir/toc/fy041/2002018064.html
856 4 2 $3 Publisher description $u http://www.loc.gov/catdir/enhancements/fy0653/2002018064-d.html