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The physics and modeling of MOSFETS ...
~
Mattausch, Hans Jurgen.
The physics and modeling of MOSFETS = surface-potential model HiSIM /
Record Type:
Language materials, printed : Monograph/item
Title/Author:
The physics and modeling of MOSFETS/ Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki.
Reminder of title:
surface-potential model HiSIM /
Author:
Miura-Mattausch, Mitiko,
other author:
Ezaki, Tatsuya.
Published:
Hackensack, N.J. :World Scientific Pub. Co., : c2008.,
Description:
xxii, 352 p. :ill., (some col.) col. ports. :
Series:
International series on advances in solid state electronics and technology
Subject:
Metal oxide semiconductor field-effect transistors - Mathematical models. -
Online resource:
http://ebooks.worldscinet.com/ISBN/9789812812056/9789812812056.shtml
ISBN:
9789812812056 (electronic bk.)
The physics and modeling of MOSFETS = surface-potential model HiSIM /
Miura-Mattausch, Mitiko,1949-
The physics and modeling of MOSFETS
surface-potential model HiSIM /[electronic resource] :Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki. - Hackensack, N.J. :World Scientific Pub. Co.,c2008. - xxii, 352 p. :ill., (some col.) col. ports. - International series on advances in solid state electronics and technology.
Includes bibliographical references and index.
ISBN: 9789812812056 (electronic bk.)Subjects--Topical Terms:
568198
Metal oxide semiconductor field-effect transistors
--Mathematical models.Index Terms--Genre/Form:
554714
Electronic books.
Dewey Class. No.: 621.3815284
The physics and modeling of MOSFETS = surface-potential model HiSIM /
LDR
:00852nam a2200205 a 4500
001
645642
003
WSP
005
20081209173314.0
006
m d
007
cr cuu|||uu|||
008
100615s2008 si ac sb 001 0 eng d
020
$a
9789812812056 (electronic bk.)
020
$a
9812812059 (electronic bk.)
035
$a
00000354
082
0 4
$2
22
$a
621.3815284
100
1
$a
Miura-Mattausch, Mitiko,
$d
1949-
$3
713837
245
1 4
$a
The physics and modeling of MOSFETS
$b
surface-potential model HiSIM /
$c
Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki.
$h
[electronic resource] :
260
$a
Hackensack, N.J. :
$a
Singapore ;
$c
c2008.
$b
World Scientific Pub. Co.,
300
$a
xxii, 352 p. :
$b
ill., (some col.) col. ports.
440
0
$a
International series on advances in solid state electronics and technology
504
$a
Includes bibliographical references and index.
650
0
$a
Metal oxide semiconductor field-effect transistors
$x
Mathematical models.
$3
568198
655
0
$a
Electronic books.
$2
local
$3
554714
700
1
$a
Ezaki, Tatsuya.
$3
713839
700
1
$a
Mattausch, Hans Jurgen.
$3
713838
710
2
$a
World Scientific (Firm)
$3
713624
856
4 0
$u
http://ebooks.worldscinet.com/ISBN/9789812812056/9789812812056.shtml
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