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Compact MOSFET models for VLSI design
~
Wiley InterScience (Online service)
Compact MOSFET models for VLSI design
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
Compact MOSFET models for VLSI design/ A.B. Bhattacharyya.
作者:
Bhattacharyya, A. B.
出版者:
Singapore ;John Wiley & Sons (Asia) ; : c2009.,
面頁冊數:
1 online resource (xxiv, 432 p.) :ill. :
標題:
Integrated circuits - Design and construction. - Very large scale integration -
電子資源:
http://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=5681002
ISBN:
9780470823446
Compact MOSFET models for VLSI design
Bhattacharyya, A. B.
Compact MOSFET models for VLSI design
[electronic resource] /A.B. Bhattacharyya. - Singapore ;John Wiley & Sons (Asia) ;c2009. - 1 online resource (xxiv, 432 p.) :ill.
Includes bibliographical references and index.
Semiconductor physics review for MOSFET modeling -- Ideal metal oxide semiconductor capacitor -- Non-ideal and non-classical MOS capacitors -- Long channel MOS transistor -- The scaled MOS transistor -- Quasistatic, non-quasistatic, and noise models -- Quantum phenomena in MOS transistors -- Non-classical MOSFET structures -- Appendix A : expression for electric field and potential variation in the semiconductor space charge under the gate -- Appendix B : features of select compact MOSFET models -- Appendix C : PSP two-point collocation method.
Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design , A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI.
ISBN: 9780470823446
Standard No.: 10.1002/9780470823446doi
Source: 10.1002/9780470823446Wiley InterSciencehttp://www3.interscience.wiley.com
LCCN: 2008045585Subjects--Topical Terms:
643328
Integrated circuits
--Very large scale integration--Design and construction.Index Terms--Genre/Form:
554714
Electronic books.
LC Class. No.: TK7874.75 / .B52 2009
Dewey Class. No.: 621.39/5
Compact MOSFET models for VLSI design
LDR
:02967cam 2200493Ia 4500
001
670727
003
OCoLC
005
20121225141855.0
006
m o d
007
cr cn|
008
130624s2009 si a ob 001 0 eng d
010
$a
2008045585
019
$a
489194174
$a
559027390
$a
646819803
$a
701468015
020
$a
9780470823446
020
$a
0470823445
020
$a
0470823437 (electronic bk.)
020
$a
9780470823439 (electronic bk.)
020
$a
0470823429 (cloth)
020
$a
9780470823422 (cloth)
020
$z
9780470823422 (cloth)
024
7
$a
10.1002/9780470823446
$2
doi
024
8
$a
9786612382109
029
1
$a
CDX
$b
11510799
029
1
$a
DEBSZ
$b
372818226
035
$a
(OCoLC)520990512
$z
(OCoLC)489194174
$z
(OCoLC)559027390
$z
(OCoLC)646819803
$z
(OCoLC)701468015
035
$a
ocn520990512
037
$a
10.1002/9780470823446
$b
Wiley InterScience
$n
http://www3.interscience.wiley.com
040
$a
DG1
$b
eng
$c
DG1
$d
YDXCP
$d
CDX
$d
EBLCP
$d
IDEBK
$d
E7B
$d
UBF
$d
DG1
$d
OCLCQ
$d
MERUC
$d
IEEEE
$d
OCLCQ
$d
DEBSZ
049
$a
HISA
050
4
$a
TK7874.75
$b
.B52 2009
082
0 4
$a
621.39/5
$2
22
082
0 4
$a
621.381
$2
22
100
1
$a
Bhattacharyya, A. B.
$q
(Amalendu Bhushan)
$3
772721
245
1 0
$a
Compact MOSFET models for VLSI design
$h
[electronic resource] /
$c
A.B. Bhattacharyya.
260
$a
Singapore ;
$a
Hoboken, NJ :
$a
[Piscataway, NJ] :
$b
John Wiley & Sons (Asia) ;
$c
c2009.
$b
IEEE Press,
300
$a
1 online resource (xxiv, 432 p.) :
$b
ill.
504
$a
Includes bibliographical references and index.
505
0
$a
Semiconductor physics review for MOSFET modeling -- Ideal metal oxide semiconductor capacitor -- Non-ideal and non-classical MOS capacitors -- Long channel MOS transistor -- The scaled MOS transistor -- Quasistatic, non-quasistatic, and noise models -- Quantum phenomena in MOS transistors -- Non-classical MOSFET structures -- Appendix A : expression for electric field and potential variation in the semiconductor space charge under the gate -- Appendix B : features of select compact MOSFET models -- Appendix C : PSP two-point collocation method.
520
$a
Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design , A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI.
588
$a
Description based on print version record.
650
0
$a
Integrated circuits
$x
Very large scale integration
$v
Design and construction.
$3
643328
650
0
$a
Metal oxide semiconductor field-effect transistors
$x
Design and construction.
$3
643329
650
0 7
$a
VLSI.
$2
swd
$3
772723
650
0 7
$a
MOS-FET.
$2
swd
$3
772666
655
4
$a
Electronic books.
$2
local
$3
554714
710
2
$a
Wiley InterScience (Online service)
$3
772722
856
4 0
$3
IEEE Xplore
$u
http://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=5681002
938
$a
YBP Library Services
$b
YANK
$n
3092315
938
$a
Coutts Information Services
$b
COUT
$n
11510799
938
$a
EBL - Ebook Library
$b
EBLB
$n
EBL479881
938
$a
ebrary
$b
EBRY
$n
ebr10325866
994
$a
92
$b
TWHIS
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